Panasonic Electric Works Co., Ltd.

Panasonic Corporation

Youichi Nishijima

Masao Kirihara

Koji Tsuji

Hiroshi Yamanaka

Yoshiharu Sanagawa

Takaaki Yoshihara

Yuichi Uchida

Satoshi Hyodo

To improve thermal insulation, a thermal infrared sensing element is carried on a sensor mount of a porous material and is spaced upwardly from a substrate by means of anchor studs projecting on the substrate. The sensor mount is formed with a pair of coplanar beams carry thereon leads extending from the sensing element. The leads and the beams are secured to the upper ends of the anchor studs to hold the sensing element at a predetermined height above the substrate. The beams and the leads are combined with each other by intermolecular adhesion such that the sensing element as well as the sensor mount can be altogether supported to the anchor studs.

Infrared sensor

A sensor system includes a sensor device () and an integrated circuit () for driving the device (). The device () includes a sensor body () of a silicon-based material, an upper sealing member () of a silicon-based material, and a lower sealing member () of a silicon-based material. The upper sealing member () and the lower sealing member () are joined together to cooperatively house the body () therewithin in an airtight manner. The device () and the circuit () are formed as a stacked body. The body () is electrically connected to a wiring pattern () of the circuit () through a conductive through-path () penetrating the upper sealing member () and a mounting electrode () provided on an outer surface of the upper sealing member (). The device () is connected to an MID substrate () through the circuit ().

Sensor device, sensor system and methods for manufacturing them

A method of manufacturing a semiconductor device. In this method, a concave portion is formed in one surface in the thickness direction of a primary base plate comprising a semiconductor substrate with a relatively large thickness dimension. Then, through-holes are formed by a reactive-ion etching process using as a mask an opening formed in an oxide film provided on the other surface in the thickness direction of the primary base plate. The opening has a narrow width in a region corresponding to the concave portion and a wide width in the remaining region. Thus, respective times necessary for the wide-width through-hole to penetrate through the primary base plate and necessary for the narrow-width through-hole to reach a bottom surface of the concave portion can be approximately equalized to complete the common etching process of the wide-width through-hole and the narrow-width through-hole approximately simultaneously.

Method of manufacturing semiconductor device

Disclosed is a gyro sensor, which comprises a primary base plate () and a support base plate () which are superimposed on one another. The primary base plate () is provided with a driven mass body () to be driven in such a manner as to be vibrated in a direction intersecting with a surface of the support base plate (), and a detection mass body () coupled with the driven mass body () through a drive spring () and adapted to be displaceable in a plane along the support base plate (). Two detection springs () extending in the arranging direction of the driven mass body () and the detection mass body () are connected, respectively, to opposite side of the detection mass body (), and the other ends of the detection springs () are connected together through a coupling segment (). A fixing segment () provided at a longitudinally intermediate portion of the coupling segment () is fixed to the support base plate (). A member formed by integrating the driven mass body () and the detection mass body () through the drive spring () is supported relative to the support base plate () by the detection springs () in a cantilever manner.

Growing community of inventors

Osaka, Japan

Youichi Nishijima