Hitachi Chemical Company, Ltd.

Youichi Machii

Masato Yoshida

Takeshi Nojiri

Kaoru Okaniwa

Mitsunori Iwamuro

Keiko Kizawa

Naoyuki Koyama

Shuichiro Adachi

Akihiro Orita

Shuuichirou Adachi

Tetsuya Satou

Yoshinori Ejiri

Toranosuke Ashizawa

Katsuyuki Masuda

Hideo Nakako

Kazunori Yamamoto

Masato Fukasawa

Yasushi Kumashiro

Nobuaki Takane

Kouichi Takei

Masaya Nishiyama

Hiroki Terasaki

Yutaka Honda

Shunya Yokozawa

Tetsuya Sato

Toshikatsu Shimazaki

Hidekuni Banno

The composition for forming a p-type diffusion layer in accordance with the present invention contains an acceptor element-containing glass powder and a dispersion medium. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.

P-type diffusion layer forming composition

The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.

Composition for forming N-type diffusion layer, method of forming N-type diffusion layer, and method of producing photovoltaic cell

Provided are a copper conductor film and manufacturing method thereof, and patterned copper conductor wiring, which have superior conductivity and wiring pattern formation, and with which there is no decrease in insulation between circuits, even at narrow wiring widths and narrow inter-wiring spacing. Disclosed are a copper conductor film and manufacturing method thereof in which a copper-based particle-containing layer, which contains both a metal having catalytic activity toward a reducing agent and copper oxide, is treated using a treatment solution that contains a reagent that ionizes or complexes copper oxide and a reducing agent that reduces copper ions or copper complex to form metallic copper in a single solution, and patterned copper conductor wiring that is obtained by patterning a copper-based particle-containing layer using printing and by said patterned particle-containing layer being treated by a treatment method using a solution that contains both a reagent that ionizes or complexes copper oxide and a reducing agent that reduces copper ions or copper complexes to form metallic copper in a single solution.

Copper conductor film and manufacturing method thereof, conductive substrate and manufacturing method thereof, copper conductor wiring and manufacturing method thereof, and treatment solution

The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first p-type diffusion layer forming composition including a p-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on the surface of the semiconductor substrate, a second p-type diffusion layer forming composition which includes a p-type impurity-containing glass powder and a dispersion medium and in which a concentration of the p-type impurity is lower than that of the first p-type diffusion layer forming composition, where the first p-type diffusion layer forming composition is applied; heat-treating the semiconductor substrate on which the first p-type diffusion layer forming composition and the second p-type diffusion layer forming composition are applied to form a p-type diffusion layer; and forming an electrode on the partial region.

Method for producing photovoltaic cell

The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first n-type diffusion layer forming composition including an n-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on the surface of the semiconductor substrate, a second n-type diffusion layer forming composition which includes an n-type impurity-containing glass powder and a dispersion medium and in which a concentration of the n-type impurity is lower than that of the first n-type diffusion layer forming composition, where the first n-type diffusion layer forming composition is applied; heat-treating the semiconductor substrate on which the first n-type diffusion layer forming composition and the second n-type diffusion layer forming composition are applied to form an n-type diffusion layer; and forming an electrode on the partial region.

A polishing slurry containing a slurry dispersing particles of tetravalent metal hydroxide in a medium therein and an additive, characterized in that the additive is a polymer containing at least one kind of monomer component selected from a group of monomers represented with a general formulae (I) and (II) below (In the general formulae (I) and (II), Rdenotes hydrogen, a methyl group, a phenyl group, a benzil group, a chlorine group, a difluoromethyl group, a trifluoromethyl group or a cyano group, Rand Rdenote hydrogen or an alkyl chain having 1 to 18 carbon atoms, a methylol group, an acetyl group or a diacetonyl group, and a case where both are hydrogen is not included. Rdenotes a morpholino group, a thiomorpholino group, a pyrrolidinyl group or a piperidino group.) The invention provides a polishing slurry in which particles form a chemical reaction layer with a polishing film to be removed with a very small mechanical action of the particles and mechanical removal by a pad without scratches and the additive realizes high planarity. 

Polishing slurry and polishing method

A polishing slurry and a polishing method which are suitably used in a CMP technique for flattening a surface of a substrate in a production process of a semiconductor device. The polishing slurry comprises particles and a medium in which at least a part of the particles are dispersed, wherein the particles are made of at least one of (1) a cerium compound selected from cerium oxide, cerium halide and cerium sulfide and having a density of 3 to 6 g/cm and an average particle diameter of secondary particles of 1 to 300 nm and (2) a tetravalent metal hydroxide. A polishing method using the polishing slurry takes advantage of a chemical action of particles in the polishing slurry and minimizes a mechanical action of the particles, thereby achieving a decrease in scratches caused by the particles and an increase in polishing rate at the same time.

Polishing compound and method for polishing substrate

A silica glass production process that can prevent cracks from occurring during the step of gel drying. In a process for producing silica glass, comprising the steps of subjecting a partial polycondensation product of alkoxysilane to hydrolysis in the presence of a solvent, an organic polymeric compound and a basic catalyst to form a sol, making the sol into a gel, drying the gel to form a dry gel, and firing the dry gel to obtain a glass, a salt is caused to exist in a concentration not less than 1.times.10.sup.-4 mol based on 100 g of the partial polycondensation product of alkoxysilane in the step of subjecting the partial polycondensation product of alkoxysilane to hydrolysis to form a sol.

Process for producing silica glass

Growing community of inventors

Tsukuba, Japan

Youichi Machii