Tokyo Shibaura Denki Kabushiki Kaisha

Youichi Araki

Shinjiro Kojima

Yukio Igarashi

Toshio Ogawa

Kazuyuki Nakashima

Disclosed is a semiconductor device comprising: a semiconductor body having a first semiconductor layer of the N conductivity type, second and third semiconductor layers of the P conductivity type, and first and second regions of the N conductivity type formed in the second semiconductor layer; a cathode electrode having first and second portions formed on the first semiconductor region; a gate electrode provided in the second semiconductor layer in opposition to the cathode electrode with the second semiconductor region interposed therebetween; an anode electrode provided on the third semiconductor layer; an auxiliary electrode consisting of two first portions and one second portion connected at ends respectively to the first portions, said first portions being formed on said second region and having free ends spaced from each other, and said second portion formed on said second layer and extending along the periphery of the first portion of said cathode electrode; and the second portion of the cathode electrode lying between said free ends of the first portions of the auxiliary electrode.

Semiconductor device

With a semiconductor device embodying this invention, a semiconductor element is clamped between a pair of electrodes in a housing. A hollow cylindrical explosion-proof member is so set in the housing as to enclose the semiconductor element. The hollow cylindrical explosion-proof element is prepared from soft elastic material capable of absorbing the force of the explosion of the semiconductor element.

Growing community of inventors

Kawasaki, Japan

Youichi Araki