Samsung Electronics Co., Ltd.

Youhwan Kim

Kyungduk Lee

Jihwa Lee

Hosung Ahn

A storage device performing a secure erase and an operating method thereof are provided. The storage device may include a controller configured to control a non-volatile memory device including a plurality of blocks. The controller includes a secure erase control logic configured to control a secure erase operation on the plurality of blocks and perform a control operation in response to a secure erase request from a host with respect to a first block among the plurality of blocks such that the secure erase operation on the first block is skipped based on a result of determining at least one selected from a secure erase state and/or a deterioration state of the first block.

Storage devices performing secure erase and operating methods thereof

A storage device includes a controller configured to control a non-volatile memory device(s) having a plurality of memory blocks therein. The controller includes secure erase control logic configured to: (i) control secure erase operations on the plurality of memory blocks in response to a secure erase request received from a host, and (ii) set flags corresponding to the plurality of memory blocks such that a first flag corresponding to a first memory block, which has undergone at least two of the secure erase operations, has a first value. Adaptive control logic is provided, which is configured to change at least one operating condition associated with a write operation and/or read operation directed at the first memory block, in response to detecting that the first flag has the first value.

Nonvolatile memory devices having adaptive write/read control to improve read reliability and methods of operating the same

An operating method of a storage device includes monitoring a temperature of a nonvolatile memory device including a plurality of memory blocks, receiving a first request from a host, in response to the first request, transmitting a first command to the nonvolatile memory device when a first memory block corresponding to the first request is exposed at a temperature of a threshold temperature or higher for a first time period that is equal to or greater than a threshold time period and a second command to the nonvolatile memory device when the first memory block is exposed at a temperature lower than the threshold temperature for the threshold time period, charging word lines of the first memory block with a driving voltage in response to the first command, and performing a first operation corresponding to the first request in response to the first command or the second command.

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Ansan-si, South Korea

Youhwan Kim