Semiconductor Manufacturing International (Shanghai) Corporation

Semiconductor Manufacturing International (Beijing) Corporation

Shanghai Huali Microelectronics Corporation

Semiconductor Manufacturing (Shanghai) International Corporation

Semiconductor Manufacturing (Beijing) International Corporation

Youcun Hu

Wei Shi

Xiamei Tang

Lei Li

Ming Yang

Bo Su

Duohui Bei

Feng Ji

Yuwen Chen

Tao Dou

Chaos Zhang

Lianfeng Hu

Baibing Ni

A method of forming a semiconductor structure includes providing a to-be-etched layer, forming a core layer over the to-be-etched layer, the core layer including a first trench extending along a first direction, forming a sidewall spacer layer on a top surface of the core layer and on sidewalls and a bottom surface of the first trench, forming a block cut structure in the first trench after forming the sidewall spacer layer, and after forming the block cut structure, etching back the sidewall spacer layer until exposing the top surface of the core layer, thereby leaving a sidewall spacer on the sidewalls of the first trench. The block cut structure extends through the first trench along a second direction. The second direction and the first direction are different. The block cut structure includes a first block-cut layer and a second block-cut layer.

Semiconductor structure and method for forming the same

A method for fabricating a semiconductor device includes providing a to-be-etched layer, including alternately arranged first regions and second regions in a first direction. Each first region adjoins adjacent second regions, and each second region includes a trench region. The method includes forming a first mask layer on the to-be-etched layer; implanting doping ions into the first mask layer outside of the trench region; forming a doped separation layer in the first mask layer of the second region to divide the first mask layer into portions arranged in a second direction perpendicular to the first direction; forming a first trench in the first mask layer of the first region; and removing the first mask layer formed in the trench region on both sides of the doped separation layer to form a second trench divided into portions arranged in the second direction by the doped separation layer.

Semiconductor devices and fabrication methods thereof

A method for fabricating a capacitor device includes providing a substrate; forming a first-layer electrode on the substrate; and forming a conductive layer on the first-layer electrode. The roughness of the first-layer electrode is a first roughness, the roughness of the conductive layer is a second roughness, and the second roughness is smaller than the first roughness. The method further includes forming a dielectric layer on the conductive layer; and forming a second-layer electrode on the dielectric layer. According to the disclosed method and capacitor device, by forming the conductive layer on the first-layer electrode, the roughness of the bottom electrode of the capacitor device is reduced, which effectively reduces the presence of protrusions on the surface of the bottom electrode. Therefore, the breakdown electric voltage of the capacitor device may be improved, and leakage current may be avoided. As such, the reliability of the capacitor device may be improved.

Capacitor devices and fabrication methods thereof

A method for fabricating a semiconductor device includes providing a to-be-etched layer, including alternately arranged first regions and second regions along a first direction; forming a first mask layer on the to-be-etched layer; and forming a top mask layer on the first region and extending to the second region along the first direction. The projection pattern of the top mask layer divides the first mask layer formed on the first region into portions arranged in a second direction that is perpendicular to the first direction. The method further includes removing a portion of the first mask layer formed on the first region on both sides of the top mask layer to form a first trench. The first mask layer on the first region under the top mask layer forms a separation mask layer which divides the first trench into portions arranged in the second direction.

A semiconductor structure and a method for forming same are provided. In one form, a forming method includes: providing a base, where a core layer is formed on the base, a hard mask layer is formed on the core layer, and a first mask opening is formed in the hard mask layer; forming a first mask trench in the core layer exposed from the first mask opening, the first mask trench including a plurality of mask sub-trenches along an extending direction, where the mask sub-trenches are isolated from each other using the core layer exposed from the first mask opening; forming a first spacer on a side wall of the mask sub-trench; removing a core layer of a region in which the first mask opening is located, and forming, at a position corresponding to the core layer, a second mask trench enclosed by the first spacer and the base, the second mask trench and the first mask trench being isolated from each other using the first spacer; and forming a second spacer on a side wall of the second mask trench, where both the first spacer and the base, and the second spacer and the base, enclose a first target trench. The first spacer and the second spacer whose side walls contact with each other are used as a cutting member, alleviating rounding of a head of the first target trench.

Semiconductor structure and method for the forming same

A method of manufacturing high performance metal-oxide-metal capacitor device that resolves problems with implementing high capacitance in the metal-oxide-metal region by filling with a low-k material both in the metal-oxide-metal region and the metal interconnection region, utilizing performing selective photolithography and etching of the first dielectric layer to define metal-oxide-metal (MOM for short) region, and filling the MOM region with high dielectric constant (high-k) material to realize a high performance MOM capacitor.

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Shanghai, China

Youcun Hu