Applied Materials, Inc.

You Wang

Shamouil Shamouilian

Arnold Kholodenko

Alexander M Veytser

Stan D Tsai

Ananda H Kumar

Lakshmanan Karuppiah

Wing Lau Cheng

Surinder S Bedi

Semyon L Kats

Renhe Jia

Kadthala Ramaya Narendrnath

Dennis Stanley Grimard

Yuchun Wang

Wen-Chiang Tu

Jie Diao

Rajeev Bajaj

Feng Quan Liu

Yongqi Hu

Daxin Mao

Zhihong Wang

Tony Kaushal

Jon T Clinton

Huyen Karen Tran

Boguslaw A Swedek

Fred Conrad Redeker

Manoocher Birang

Sivapackia Ganapathiappan

Vijay D Parkhe

Dominic J Benvegnu

Liang-Yuh Chen

Eric J Bergman

Brian J Brown

Barry Lee Chin

Yan Wang

Shou-Sung Chang

Paul D Butterfield

Jianshe Tang

Daniel Redfield

Robert D Tolles

Alain Duboust

Kun Xu

John Lee Klocke

Rashid Mavliev

Jay Gurusamy

Anzhong Chang

Haosheng Wu

Ralph M Wadensweiler

Gregory E Menk

Ingemar Carlsson

Yingdong Luo

Daniel A Carl

Hari N Soundararajan

Syed Hasan Askari

Alpay Yilmaz

Ekaterina A Mikhaylichenko

David Maxwell Gage

Martin S Wohlert

Yuan Tian

John O Dukovic

Liang-Guo Wang

Aniruddh Jagdish Khanna

Veera Raghava Reddy Kakireddy

William H McClintock

Yen-Chu Yang

Robert A Ewald

Eric Davey

Mark Contreras

Anand H Kumar

Pierre Fontarensky

Liang-Yun Chen

Embodiments herein generally relate to polishing pads and methods of forming polishing pads. A polishing pad includes a plurality of polishing elements. Each polishing element comprises an individual surface that forms a portion of a polishing surface of the polishing pad and one or more sidewalls extending downwardly from the individual surface to define a plurality of channels disposed between the polishing elements. Each of the polishing elements has a plurality of pore-features formed therein. Each of the polishing elements is formed of a pre-polymer composition and a sacrificial material composition. In some cases, a sample of the cured pre-polymer composition has a glass transition temperature (T) of about 80° C. or greater. A storage modulus (E′) of the cured pre-polymer composition at a temperature of 80° C. (E′80) can be about 200 MPa or greater.

Polishing pads for high temperature processing

A chemical mechanical polishing system includes a platen to support a polishing pad having a polishing surface, a source of coolant, a dispenser having one or more apertures suspended over the platen to direct coolant from the source of coolant onto the polishing surface of the polishing pad; and a controller coupled to the source of coolant and configured to cause the source of coolant to deliver the coolant through the nozzles onto the polishing surface during a selected step of a polishing operation.

Low-temperature metal CMP for minimizing dishing and corrosion, and improving pad asperity

Electroplating systems according to the present technology may include a two-bath electroplating chamber including a separator configured to provide fluid separation between a first bath configured to maintain a catholyte during operation and a second bath configured to maintain an anolyte during operation. The electroplating systems may include a catholyte tank and an anolyte tank fluidly coupled with the two baths of the two-bath electroplating chamber. The electroplating systems may include a first pump configured to provide catholyte from the catholyte tank to the first bath. The electroplating systems may include a second pump configured to provide anolyte from the anolyte tank to the second bath. The electroplating systems may also include an oxygen-delivery apparatus configured to provide an oxygen-containing fluid within the electroplating system.

Systems and methods for copper (I) suppression in electrochemical deposition

A method and apparatus for polishing a substrate that includes a polishing article comprising a polymeric sheet having a raised surface texture, which is formed on the surface of the polymeric sheet is provided. According to one or more implementations of the present disclosure, an advanced polishing article has been developed, which does not require abrasive pad conditioning. In some implementations of the present disclosure, the advanced polishing article comprises a polymeric sheet having a polishing surface with a raised surface texture or 'micro-features' and/or a plurality of grooves or 'macro-features' formed in the polishing surface. In some implementations, the raised surface texture is embossed, etched, machined or otherwise formed in the polishing surface prior to installing and using the advanced polishing article in a polishing system. In one implementation, the raised features have a height within one order of magnitude of the features removed from the substrate during polishing.

Thin plastic polishing article for CMP applications

A method of controlling polishing includes polishing a first substrate having an overlying layer on an underlying layer or layer structure. During polishing, the substrate is monitored with an in-situ monitoring system to generate a sequence of measurements. The measurements are sorted into groups, each group associated with a different zone of a plurality of zones on the substrate. For each zone, a time at which the overlying layer is cleared is determined based on the measurements from the associated group. At least one second adjusted polishing pressure for at least zone is calculated based on a pressure applied in the at least one zone during polishing the substrate, the time for the at least one zone, and the time for another zone. A second substrate is polished using the at least one adjusted polishing pressure.

Feedback control of polishing using optical detection of clearance

Embodiments described herein relate to removing material from a substrate. More particularly, the embodiments described herein relate to polishing or planarizing a substrate by a chemical mechanical polishing process. In one embodiment, a method of chemical mechanical polishing (CMP) of a substrate is provided. The method comprises exposing a substrate having a conductive material layer formed thereon to a polishing solution comprising phosphoric acid, one or more chelating agents, one or more corrosion inhibitors, and one or more oxidizers, forming a passivation layer on the conductive material layer, providing relative motion between the substrate and a polishing pad and removing at least a portion of the passivation layer to expose a portion of the underlying conductive material layer, and removing a portion of the exposed conductive material layer.

Chemical planarization of copper wafer polishing

A method and apparatus for polishing or planarizing a substrate by a chemical mechanical polishing process. In one embodiment a method of processing a semiconductor substrate is provided. The method comprises positioning a substrate on a polishing apparatus comprising a polishing pad assembly, delivering a polishing slurry to a surface of the polishing pad assembly, polishing the substrate with the surface of the polishing pad assembly, monitoring the removal rate of material from a plurality of regions on the surface of the substrate, determining whether the plurality of regions on the surface of the substrate are polishing uniformly, and selectively delivering a polishing slurry additive to at least one region of the plurality of regions to obtain a uniform removal rate of material from the plurality of regions on the surface of the substrate, wherein the removal rate of material from the at least one region is different than at least one other region of the plurality of regions.

Dishing and defect control of chemical mechanical polishing using real-time adjustable additive delivery

Polishing compositions and methods for removing conductive materials from a substrate surface are provided. The method includes providing a substrate comprising dielectric feature definitions, a barrier material disposed in the feature definitions, and a bulk conductive material disposed on the barrier material in an amount sufficient to fill feature definitions; polishing the substrate to substantially remove the bulk conductive material; polishing a residual conductive material to expose feature definitions, comprising: applying a first voltage for a first time period, wherein the first voltage is less than the critical voltage; and applying a second voltage for a second time period, wherein the second voltage is greater than the critical voltage.

Method and composition for electrochemically polishing a conductive material on a substrate

An erosion-resistant article for use as a component in plasma process chamber. The erosion-resistant article comprises a support and an oxide coating comprising yttrium, which is disposed over the support. The support and the oxide coating preferably have material compositions that differ from one another in coefficient of thermal expansion by no more than 5&#xd7;10/K. Preferred oxide coating compositions include yttria and yttrium aluminum garnet. Preferred supports include alumina supports and aluminum-silicon carbide supports.

Erosion-resistant components for plasma process chambers

Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a composition for processing a substrate having a conductive material layer disposed thereon is provided which composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, a pH adjusting agent, a solvent, and a pH between about 3 and about 10. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.

Process and composition for conductive material removal by electrochemical mechanical polishing

Aspects of the present invention include a method and an apparatus that may be utilized to reduce dishing and improve cleaning efficiency of a material layer residue (e.g., copper residual) by varying a substrate potential in a substrate processing system. For example, by utilizing multiple polishing steps and applying different voltages (e.g., while a substrate is being in a polishing station), ECMP can be used to effectively reduce dishing and it can be used to enhance copper residual cleaning as well as minimizing a possibility of arcing, which can occur at the end of the polishing process, when a substrate is moved from a polishing station.

Method for electrochemically mechanically polishing a conductive material on a substrate

A method for conditioning an Ecmp pad is provided. In one embodiment, a method for electrochemically processing a substrate includes the steps of providing an electrical bias voltage between the top surface of the pad assembly and an electrode, and electrochemically removing contaminants from the top surface of the pad.

Electrochemical method for Ecmp polishing pad conditioning

A method and apparatus for electroprocessing a substrate is provided. In one embodiment, a method for electroprocessing a substrate includes the steps of biasing a first electrode to establish a first electroprocessing zone between the electrode and the substrate, and biasing a second electrode disposed radially inward of the first electrode with a bias that is different than the bias applied to the first electrode. In one embodiment, the first electrode is coated with an inert material and in this way the same polish rate is obtained with a lower potential level applied to the first electrode.

Method and apparatus for electroprocessing a substrate with edge profile control

An article of manufacture and apparatus are provided for processing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive polishing surface. An electrode is disposed below the polishing surface having a dielectric material therebetween. A plurality of apertures may be formed in the polishing surface and the dielectric material to at least partially expose the electrode to the polishing surface. A membrane may be disposed between the electrode and the polishing surface that is permeable to ions and current to promote continuity between the electrode and the polishing surface.

Conductive pad with ion exchange membrane for electrochemical mechanical polishing

A contact ring for an electrochemical plating system is provided. The contact ring includes an annular substrate supporting member, a plurality of radially positioned conductive substrate contact pins extending from the substrate supporting member, an annular conductive thief element attached to the substrate supporting member, and at least one source of electrical power in electrical communication with the contact pins and the conductive thief element.

Substrate support element for an electrochemical plating cell

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Cupertino, CA, United States of America

You Wang