Yonsei University

Powercubesemi, Inc.

You Seung Rim

Hyun Jae Kim

Dong Lim Kim

Woong Hee Jeong

Hyun Soo Shin

Joohye Jung

Sin Su Kyoung

Tai Young Kang

Schottky diode and method for fabricating the same disclosed. The Schottky diode includes a gallium oxide layer that is a semiconductor layer doped with a first-type dopant, a cathode in ohmic contact with the gallium oxide layer and an anode having a Schottky contact metal layer in Schottky contact with the gallium oxide layer. The gallium oxide layer is in contact with an interface with the Schottky contact metal layer, contains a second-type dopant of a conductivity opposite to that of the first-type dopant, and has an interlayer which is a region where a concentration of the second-type dopant decreases as it moves away from an interface with the Schottky contact metal layer.

Schottky diode and method for fabricating the same

Provided are a method of forming an oxide thin film and an electrical device and thin film transistor using the method. The method includes forming an oxide thin film on a substrate by applying a precursor solution; and performing a thermal treatment process on the substrate under a pressurized atmosphere using a gas at about 100&#xb0; C. to about 400&#xb0; C.

Methods of forming oxide thin film and electrical devices and thin film transistors using the methods

Methods of forming an oxide material layer are provided. The method includes mixing a precursor material with a peroxide material to form a precursor solution, coating the precursor solution on a substrate, and baking the coated precursor solution.

Compositions used in formation of oxide material layers, methods of forming an oxide material layer using the same, and methods of fabricating a thin film transistor using same

Provided are a composition for an oxide semiconductor, a method of preparing the composition, methods of forming an oxide semiconductor thin film and an electronic device using the composition. The composition for an oxide semiconductor includes a tin compound, a zinc compound, and a low electronegativity metal compound containing a metal with an electronegativity lower than zinc.

Composition for oxide thin film, method of preparing the composition, method of forming the oxide thin film, and electronic device using the composition

Provided are a composition for an oxide thin film, a preparation method of the composition, a method for forming an oxide thin film using the composition, an electronic device including the oxide thin film, and a semiconductor device including the oxide thin film. The composition for the oxide thin film includes a metal precursor and nitric acid-based stabilizer. The metal precursor includes at least one of a metal nitrate, a metal nitride, and hydrates thereof.

Composition for an oxide thin film, a preparation method of the composition, a method for forming an oxide thin film using the composition, an electronic device including the oxide thin film, and a semiconductor device including the oxide thin film

Growing community of inventors

Seoul, South Korea

You Seung Rim