Samsung Electronics Co., Ltd.

You-se Kim

Jin-Woo Park

Seung-Bum Kim

Se-Hwan Park

Wan-Dong Kim

Deok-Woo Lee

Ji-yoon Park

Sang-Wan Nam

Kee Ho Jung

A nonvolatile memory device includes: a memory cell array including three or more planes; a first clock generator generating a first clock signal having a first period; a second clock generator generating a second clock signal having a second period that varies with the temperature; a plurality of clock switching controllers outputting one of the first and second clock signals as a reference clock signal; a control logic including a plurality of bitline shutoff generators, which output a plurality of bitline shutoff signals based on the reference clock signal; and a plurality of page buffers connecting bitlines of the planes and data latch nodes in accordance with the bitline shutoff signals.

Nonvolatile memory device with multiple clocks

A method of erasing a memory device, the method of erasing the memory device including: performing, in a first erase period, a first erase operation on memory cells respectively connected to a plurality of word lines, wherein at least one of the memory cells, which is included in a memory block, is not erase-passed; determining, after the first erase period, an erase operation speed by applying a verify voltage to at least one of the plurality of word lines, and determining an effective erasing time for each word line based on the determined erase operation speed; and performing, in a second erase period, a second erase operation on the memory cells respectively connected to the plurality of word lines based on the determined effective erasing times.

Nonvolatile memory device and an erase method thereof

Growing community of inventors

Hwaseong-si, South Korea

You-se Kim