Samsung Electronics Co., Ltd.

You-Kyoung Lee

Gil-heyun Choi

Sang-Bom Kang

Seong-Geon Park

Jin-Ho Ju

Kyung-In Choi

Sang-Woo Lee

Dong-Ki Lee

Sung-Chul Kang

Jong-Myeong Lee

Hoon Chul Kang

Seung-Uk Lee

Byung-Hee Kim

Byung-uk Kim

Soo-Im Jeong

Hyo-Youl Kim

In a method for forming a field effect transistor, a metal nitride layer is formed on a gate electrode insulating layer. Tantalum amine derivatives represented by the chemical formula Ta(NR)(NRR), in which R, Rand Rrepresent H or a C-Calkyl group, may be used to form the metal nitride layer. Nitrogen may then be implanted into the metal nitride layer to increase the nitrogen content of the layer.

Methods of producing integrated circuit devices utilizing tantalum amine derivatives

In a method for forming a wiring of a semiconductor device using an atomic layer deposition, an insulating interlayer is formed on a substrate. Tantalum amine derivatives represented by a chemical formula Ta(NR)(NRR)in which R, Rand Rrepresent H or C-Calkyl group are introduced onto the insulating interlayer. A portion of the tantalum amine derivatives is chemisorbed on the insulating interlayer. The rest of tantalum amine derivatives non-chemisorbed on the insulating interlayer is removed from the insulating interlayer. A reacting gas is introduced onto the insulating interlayer. A ligand in the tantalum amine derivatives chemisorbed on the insulating interlayer is removed from the tantalum amine derivatives by a chemical reaction between the reacting gas and the ligand to form a solid material including tantalum nitride. The solid material is accumulated on the insulating interlayer through repeating the above processes to form a wiring.

Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same

The present invention provides a thin film transistor array panel comprising: an insulating substrate; a first signal line formed on the insulating substrate and extending in a first direction; a second signal line formed on the insulating substrate, extending in a second direction, and intersecting the first signal line; a thin film transistor connected to the first and second signal lines; a passivation layer formed on the second signal line and having a contact hole exposing a portion of the second signal line; and a pixel electrode formed on the passivation layer and connected to the thin film transistor through the contact hole, wherein the passivation layer is formed by coating an organic solution that includes an organic insulating material and a solvent including at least one of PGMEP, EEP, and nBA.

Method of manufacturing a thin film transistor array panel

The present invention relates to a photoresist composition for an MMN (multi-micro nozzle) head coater, more particularly to a photoresist composition comprising a novolak resin with a molecular weight ranging from 2000 to 12,000, a diazide photoactive compound, an organic solvent, and a Si-based surfactant for use in liquid crystal display circuits. The photoresist composition for liquid crystal display circuits of the present invention solves the stain problem, which occurs in MMN head coaters used for large-scale substrate glass, and improves coating characteristics, so that it can be utilized industrially and is expected to significantly improve productivity.

Photoresist composition for multi-micro nozzle head coater

The present invention relates to a photoresist composition having high heat resistance used in the production process of an LCD, and more particularly, to a photoresist composition having high heat resistance, capable of decreasing process tact (a way), of process simplification, and of the retrenchment of expenditures. The inventive composition facilitates this through making it possible to skip 5 processes, such as Cr metal deposition forming a metal film, and the photo/etch/PR strip/etch steps of the whole surface of the metal, by substituting the inventive composition for the usual metal film, such that Nion doping in production of TFT-LCD can take place due its high heat resistance.

Photoresist composition having a high heat resistance

In a method for forming a wiring of a semiconductor device using an atomic layer deposition, an insulating interlayer is formed on a substrate. Tantalum amine derivatives represented by a chemical formula Ta(NR)(NRR)in which R, Rand Rrepresent H or C&#x2013;Calkyl group are introduced onto the insulating interlayer. A portion of the tantalum amine derivatives is chemisorbed on the insulating interlayer. The rest of tantalum amine derivatives non-chemisorbed on the insulating interlayer is removed from the insulating interlayer. A reacting gas is introduced onto the insulating interlayer. A ligand in the tantalum amine derivatives chemisorbed on the insulating interlayer is removed from the tantalum amine derivatives by a chemical reaction between the reacting gas and the ligand to form a solid material including tantalum nitride. The solid material is accumulated on the insulating interlayer through repeating the above processes to form a wiring.

Atomic layers can be formed by introducing a tantalum amine derivative reactant onto a substrate, wherein the tantalum amine derivative has a formula: Ta(NR)(NRR), wherein R, Rand Rare each independently H or a C&#x2013;Calkyl functional group, chemisorbing a portion of the reactant on the substrate, removing non-chemisorbed reactant from the substrate and introducing a reacting gas onto the substrate to form a solid material on the substrate. Thin films comprising tantalum nitride (TaN) are also provided.

Methods for forming atomic layers and thin films including tantalum nitride and devices including the same

In a method for forming a gate electrode, a dielectric layer having a high dielectric constant is formed on a substrate. Tantalum amine derivatives represented by a chemical formula Ta(NR)(NRR)in which R, Rand Rrepresent H or C&#x2013;Calkyl group are introduced onto the dielectric layer to form a tantalum nitride layer. A capacitor metal layer or a gate metal layer is formed on the tantalum nitride layer. The capacitor metal layer or the gate metal layer and the tantalum nitride layer are patterned to form a capacitor electrode or a gate electrode. The tantalum amine derivatives are used in forming a dual gate electrode.

A semiconductor device has at least two different gate electrodes. The two different gate electrodes include a first gate electrode on a first gate insulation layer. The first gate electrode includes a first metal-containing conductive pattern on the first gate insulation layer and a second metal-containing conductive pattern. A second gate electrode is provided on a second gate insulation layer and includes a third metal-containing conductive material on the second gate insulation layer. The first metal-containing conductive pattern and the third metal-containing conductive pattern have different work functions from each other. A surface of the second metal-containing conductive pattern and a surface of the third metal-containing conductive pattern are substantially planar. Methods of fabrication such semiconductor devices are also provided.

Semiconductor devices having metal containing N-type and P-type gate electrodes and methods of forming the same

Disclosed is a photoresist composition having a good sensitivity and residual layer characteristic and a method of forming a pattern using the same. The photoresist composition includes 5-30% by weight of a polymer resin, 2-10% by weight of a photosensitive compound, 0.1-10% by weight of a sensitivity enhancing agent, 0.1-10% by weight of a sensitivity restraining agent and 60-90% by weight of an organic solvent. A photoresist layer is formed by coating the photoresist composition on a substrate and then drying the coated photoresist composition. Then, thus obtained photoresist layer is exposed by using a mask having a predetermined pattern. Then, a photoresist pattern is formed by developing thus exposed photoresist layer. The photoresist pattern exhibits a uniform layer thickness and critical dimension.

Photoresist composition and method of forming pattern using the same

Disclosed is a photoresist composition including a thermal acid generator and a method of forming a pattern using the same. The photoresist composition includes about 100 parts by weight of an alkali-soluble acryl copolymer, about 5-100 parts by weight of 1,2-quinonediazide compound, about 2-35 parts by weight of nitrogen-containing cross-linking agent and about 0.1-10 parts by weight of a thermal acid generator which produces an acid by heat. The photoresist composition is coated on a substrate and dried to form a photoresist layer. The photoresist layer is exposed by using a mask having a predetermined shape. Thus obtained exposed photoresist layer is developed by using an aqueous alkaline solution to form a photoresist pattern. Thus obtained photoresist pattern is heated to be cured without generating thermal reflow.

Growing community of inventors

Chungchoungbuk-do, South Korea

You-Kyoung Lee