Samsung Electronics Co., Ltd.

You-Keun Han

Seung-Jin Seo

Seok-Il Kim

Seung-Man Shin

Byung-Se So

Young-Man Ahn

Jung-Kuk Lee

Hui-chong Shin

Ho-Suk Lee

Sung-Ho Choi

Jung-Hwan Choi

Hoe-Ju Chung

Jong-Hoon Kim

Yang-Ki Kim

Jung-Joon Lee

Jong-Geon Lee

Joo-Sun Choi

Kyung-Hee Han

Kwan-Yong Jin

Soon-Deok Jang

An address transforming circuit that can change a memory mapping when a system is booted includes a switch control signal generating circuit and an address transforming unit. The switch control signal generating circuit generates alternately enabled switch control signals synchronized with a reset signal. The address transforming unit transforms bits of a first address to generate a second address in response to the switch control signals. Accordingly, a semiconductor memory device including the address transforming circuit has a long lifetime and high reliability.

Address transforming circuit and semiconductor memory device including the same

A semiconductor device includes a resistor terminal, a reference voltage generator and a detector. The resistor terminal is connected to an external resistor. The reference voltage generator generates at least one reference voltage. The detector generates a detection signal based at least in part on a resistor terminal voltage and the at least one reference voltage. The detection signal indicates a state of an electrical connection to the resistor terminal. The resistor terminal voltage is a voltage at the resistor terminal.

Semiconductor devices including design for test capabilities and semiconductor modules and test systems including such devices

A memory buffer selecting between a parallel test mode and a mode register control mode, and a memory module and memory system having the memory buffer are disclosed. The memory buffer includes a control circuit and a mode selecting circuit. The control circuit generates a mode control signal based on a first chip selecting signal, a second chip selecting signal, a row address signal, a column address signal, and a write enable signal. The mode selecting circuit selects one of a parallel test mode and a mode register control mode in response to the mode control signal.

Memory module including memory buffer and memory system having the same

A memory module comprises a plurality of semiconductor memory devices each having a termination circuit for a command/address bus. The semiconductor memory devices are formed in a substrate of the memory module, and they operate in response to a command/address signal, a data signal, and a termination resistance control signal.

Memory module and memory system comprising memory module

A memory module includes: an ODT circuit on a memory device and including pull-up and pull-down resistors connected between pull-up and pull-down transistors. A data masking (DM) pad is provided in a tap region of the module board. A current leakage monitoring unit is also provided and receives a ground state signal from the DM pad and a bit configuration signal from the memory device and disables the pull-up transistors to cut off a current path between the pull-up resistors of the ODT circuit and the DM pad during a ODT enable mode.

Memory module cutting off DM pad leakage current

Example embodiments relate to a method and system of testing a memory module having the process of receiving single ended input signals via differential input terminals through which differential pairs of packet signals may be received from a testing equipment, wherein a number of terminals of the testing equipment may be different from a number of terminals of the memory module, and testing memory chips of the memory module based on the single ended input signals.

Method of testing a memory module and hub of the memory module

A memory module includes a plurality of data ports configured to receive/transmit associated data and a plurality of memory devices. The plurality of memory devices include a first set of the memory devices in at least one rank, each memory device of the first set being coupled to each of the associated data ports, and a second set of the memory devices in at least one other rank, each memory device of the second set being configured to receive/transmit the associated data for the memory device through at least each associated memory device of the first set.

Memory modules and memory systems having the same

A memory module packaging test system may include a plurality of test slots into which a plurality of memory modules may be installed so that the system may simultaneously test the memory modules. The memory module packaging test system may use a server system for a registered dual in-line memory module (RDIMM) or a fully buffered dual in-line memory module (FBDIMM) so that the system may test an unbuffered dual in-line memory module (UDIMM).

Memory module packaging test system

A memory module, a memory unit, and a hub with a non-periodic clock and methods for using the same. An example memory module may include a phased locked loop, receiving an external, periodic clock and generating one or more internal periodic clocks and a plurality of memory units, receiving one of the internal periodic clocks or a non-periodic clock from an external source.

Memory module, memory unit, and hub with non-periodic clock and methods of using the same

Methods and apparatuses for entering at least one memory into a test mode are provided. At least one test MRS bit may be stored in a first register for controlling the memory. At least one test MRS code may be programmed into a second register. Each of the at least one bits stored in the first register may correspond one of the at least one test MRS codes stored in the second register.

Methods and apparatus for interfacing between test system and memory

A memory module testing apparatus and method include a test slot adapted to receive a target memory module, wherein the target memory module includes a first memory unit to store information related to the target memory module. The memory module testing apparatus further includes a second memory unit adapted to store information related to a memory module, and a first switching unit adapted to selectively provide a driving signal to at least one of the first memory unit and the second memory unit.

Memory module testing apparatus and method of testing memory modules

A method of testing a memory module comprising converting a hub of the memory module into a transparent mode, providing first data corresponding to a first address to the hub of the memory module, providing the first data of the hub of the memory module to a first address of a memory, providing first expected data to the hub of the memory module, outputting second data stored at the first address of the memory to the hub of the memory module, and comparing the second data with the first expected data.

A semiconductor memory module and a semiconductor memory device are disclosed. In one embodiment, the invention provides a semiconductor memory module comprising a circuit board, a plurality of semiconductor memory devices adapted to operate during a test mode and a normal operation mode and mounted on the circuit board, a first signal line set comprising a plurality of first signal lines connected to the plurality of semiconductor memory devices, and a plurality of second signal line sets. Each semiconductor memory device comprises first terminals adapted to receive first signals from the first signal lines, second terminals connected to a corresponding one of the second signal line sets, a third terminal adapted to receive an enable signal during the test mode, and a signal transmitting unit adapted to output second signals to the second terminals in response to the enable signal.

Growing community of inventors

Yongin-si, South Korea

You-Keun Han