Soraa Laser Diode, Inc.

Kyocera Sld Laser, Inc.

University of California

You-Da Lin

James W Raring

Christiane Elsass

Shuji Nakamura

Steven P DenBaars

James Stephen Speck

Christiane Poblenz

Hiroaki Ohta

An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/&#x2212;10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.

Laser devices using a semipolar plane

An optical device includes a gallium and nitrogen containing substrate having a surface region and an optical blocking region of InAlN material overlying the surface region. A strain control region maintain quantum wells within a predetermined strain state. The strained region is preferably a confined heterostructure.

Method and structure for laser devices using optical blocking regions

A semipolar plane III-nitride semiconductor-based laser diode or light emitting diode, comprising a semipolar Indium containing multiple quantum wells for emitting light, having Aluminum containing quantum well barriers, wherein the Indium containing multiple quantum well and Aluminum containing barriers are grown in a semipolar orientation on a semipolar plane.

Aluminum gallium nitride barriers and separate confinement heterostructure (SCH) layers for semipolar plane III-nitride semiconductor-based light emitting diodes and laser diodes

Growing community of inventors

Goleta, CA, United States of America

You-Da Lin