Win Semiconductors Corp.

You-Cheng Lai

Chih-Wen Huang

Jui-Chieh Chiu

Chen-Yang Hsieh

A transition structure disposed in a package is disclosed. The transition structure comprises a first ground lead and a second ground lead; and a signal lead, disposed between the first ground lead and the second ground lead, wherein the first ground lead and the second ground lead have an exterior edge and an interior edge, the signal lead is coupled to a metal line formed on a printed circuit board (PCB) and a signal terminal of the die within the package; wherein an exterior gap formed between the first ground lead and the second ground lead at the exterior edge is wider than an interior gap formed between the first ground lead and the second ground lead at the interior edge.

Transition structure and high-frequency package

A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate; a winding structure formed on a top side the semiconductor substrate, wherein the winding structure comprises one or more metal lines winding with respect to a center of the winding structure; and a backside metal formed under a backside of the semiconductor substrate; wherein a hollow slot is formed within the backside metal, and a projection of the winding structure is within the hollow slot.

Semiconductor device with slotted backside metal for improving Q factor

A semiconductor package includes a die comprising at least a via and a least a hot via; a ground lead, formed directly under a back side of the die, contacting with the back side of the die, and directly connected to the a least a hot via and the at least a via of the die; a buffer layer, formed on the die, configured to absorb a stress applied to the die and prevent the die from damage; and a molding portion, formed on the die buffer layer.

Growing community of inventors

Taoyuan, Taiwan

You-Cheng Lai