Screen Holdings Co., Ltd.

Yosuke Yasutake

Koji Ando

Rei Takeaki

Tadashi Maegawa

Hiroaki Ishii

Wataru Sakai

Yutaka Ikegami

The substrate processing apparatus includes a suction holding mechanism, a rotation mechanism, a plurality of lift pins, a vertical movement mechanism, and a horizontal movement mechanism. The suction holding mechanism sucks and holds a substrate. The rotation mechanism rotates the suction holding mechanism holding the substrate about the rotation axis. The vertical movement mechanism moves the plurality of lift pins in the vertical direction. A sensor measures the eccentric state of the substrate W held by the suction holding mechanism. The vertical movement mechanism supports the substrate from the suction holding mechanism by moving the plurality of lift pins and the horizontal movement mechanism moves the plurality of lift pins based on the eccentric state of the substrate measured by the sensor in a state where the substrate is supported.

Substrate processing apparatus

A holding mechanism holds a substrate horizontally. A rotation mechanism rotates the holding mechanism holding the substrate. A nozzle supplies a processing liquid to the substrate. A nozzle arm holds the nozzle. An arm actuation mechanism moves the nozzle arm between a processing position overlapping the substrate in plan view and a retracted position displaced from the substrate in plan view. A cup portion is disposed around the holding mechanism, and receives the processing liquid from the substrate. A cup actuation mechanism moves the cup portion up and down between an upper position and a lower position. A first container is fixed to the cup portion to be movable up and down integrally with the cup portion, and can accommodate the nozzle at the retracted position.

A substrate processing apparatus includes a substrate holder, a rotating mechanism, a processing liquid discharge unit, and a gas discharge unit. The processing liquid discharge unit discharges a liquid flow of a processing liquid such that the liquid flow comes into contact with a landing position in a rotation path of a peripheral portion of an upper surface of the substrate being rotated. The gas discharge unit discharges a first gas flow of an inert gas from above toward a first position upstream from the landing position in a direction of rotation of the substrate in the rotation path, and discharges a second gas flow of the inert gas from above toward a second position upstream from the first position in the direction of rotation of the substrate in the rotation path. The kinetic energy of the second gas flow is lower than the kinetic energy of the first gas flow.

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Kyoto, Japan

Yosuke Yasutake