Tokyo Electron Limi Ted

Yosuke Tamura

Hidetoshi Hanaoka

Yohei Uchida

Tetsuji Sato

Junichi Sasaki

Ayuta Suzuki

Shuhei Yamabe

Toshiya Tsukahara

Kota Yachi

A plasma processing apparatus includes a processing vessel, a lower electrode, an annular member, an inner upper electrode, an outer upper electrode, a processing gas supply, a first high frequency power supply and a first DC power supply. The lower electrode is configured to place a processing target substrate. The annular member is disposed on an outer peripheral portion of the lower electrode. The inner upper electrode is disposed to face the lower electrode. The outer upper electrode is disposed at an outside of the inner upper electrode. The first high frequency power supply applies a first high frequency power. The first DC power supply applies a first variable DC voltage to the outer upper electrode. At least a part of a surface of the outer upper electrode exposed to the processing space is located higher than a surface of the inner upper electrode exposed to the processing space.

Plasma processing apparatus and plasma processing method

Growing community of inventors

Miyagi, Japan

Yosuke Tamura