Sony Semiconductor Solutions Corporation

Sony Group Corporation

Yosuke Takita

Yoichi Ootsuka

Takashi Sakairi

Yoshiaki Kitano

Koichi Amari

Tsuyoshi Okazaki

Keiichi Maeda

Tadayuki Dofuku

Yuichi Seki

Yuuji Nishimura

Kunihiko Hikichi

Toyomi Jinwaki

Masaya Shimoji

Tomoaki Honda

Kazuhiro Tamura

Takuma Matsuno

Yuu Kawaguchi

Kouichi Itabasi

Mitsuru Ishikawa

Kouta Fukumoto

Ryou Chiba

Takafumi Nishi

Chiho Araki

Katsunori Dai

Shunsuke Narui

Yuuji Adachi

Hideki Kawaguchi

Seiya Haraguchi

Takashi Nakashikiryo

Takayoshi Masaki

Takuya Fujino

Atsushi Tanaka

Toshiaki Okada

An electrode structure includes: a plurality of pixel electrodes arranged separately from each other; and a plurality of dielectric layers laminated in a first direction with respect to the plurality of pixel electrodes, in which the plurality of dielectric layers includes: a first dielectric layer that spreads over the plurality of pixel electrodes in a direction intersecting with the first direction; and a second dielectric layer that includes dielectric material having a refractive index higher than that of the first dielectric layer, sandwiches the first dielectric layer together with the plurality of pixel electrodes, and has a slit at a position overlapping space between pixel electrodes adjacent when viewed from the first direction.

Electrode structure, liquid crystal display device, projective display device, and method of manufacturing electrode structure

The present disclosure relates to a solid-state imaging device that enables diffusion of components in the interfaces between microlenses and an antireflection film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. Moisture permeation holes are formed between the microlenses of adjacent pixels. The moisture permeation holes are covered with an antireflection film. The antireflection film is formed on the surfaces of the microlenses excluding the diffusion holes. The refractive index of the antireflection film is higher than the refractive index of the microlenses. The present disclosure can be applied to complementary metal oxide semiconductor (CMOS) image sensors that are back-illuminated solid-state imaging devices, for example.

Solid-state imaging device, method of manufacturing the same, and electronic apparatus

Growing community of inventors

Kumamoto, Japan

Yosuke Takita