Mitsui Chemicals, Inc.

National Institute of Advanced Industrial Science and Technology

Nippon Light Metal Company, Ltd.

Tazmo Co., Ltd.

Yosuke Ono

Kazuo Kohmura

Atsushi Okubo

Daiki Taneichi

Tsuneaki Biyajima

Hisako Ishikawa

Yasuyuki Sato

Toshiaki Hirota

Takashi Kozeki

Akira Ishikawa

Yasuhisa Fujii

Kazuo Yagi

Takeo Yamada

Akifumi Kagayama

Shintaro Maekawa

Atsuko Sekiguchi

Toshinori Matsuda

Yuichi Kato

Kiyokazu Koga

Nobuko Matsumoto

Provided is a pellicle film, which includes plural carbon nanotubes, in which an average value of linearity parameters represented by the following Formula (1) of the plurality of carbon nanotubes is 0.10 or less:linearity parameter=standard deviationof a width of single tube/average valueof the width  Formula (1):

Pellicle film, pellicle, exposure original plate, exposure device, and method for manufacturing pellicle film

To provide a pellicle in which outgas from an adhesive layer is suppressed. The pellicle includes a pellicle film, a support frame for supporting the pellicle film, a protrusion part arranged in the support frame, a first adhesive layer arranged on the protrusion part; and an inorganic material layer arranged at a position closer to the pellicle film than the first adhesive layer. The inorganic material layer may include a first inorganic material layer arranged at a first side surface of the first adhesive layer, the first side surface of the first adhesive layer intersecting the pellicle film, and arranged at a position closer to the pellicle film.

Pellicle, exposure master, exposure device and method for manufacturing semiconductor device

Provided is a supporting frame in which a vent hole detachably arranging a filter and to which a pellicle film for extreme ultraviolet lithography can be attached. A support frame according to an embodiment of the present invention is a support frame for arranging a pellicle film, the support frame has a through hole being made from a hole extending along a first direction, the first direction being almost parallel to a surface direction of the pellicle film, and a hole extending along a second direction, the second direction not being parallel to the first direction; and the support frame includes a filter, the filter arranged at an inside of the through hole or at an end of the through hole, and the filter is arranged apart from the pellicle film.

Supporting frame for pellicle, pellicle, method for manufacturing same, exposure master using same, and method for manufacturing semiconductor device

A support frame for pellicle is provided including a first support frame part, a second support frame part, and a filter, wherein the filter has a flat plate-shaped frame shape and is sandwiched by the first support frame part and the second support frame part, the first support frame part includes a first body part having a flat plate-shaped frame shape and a first engaging portion protruded from the first body part to a thickness direction of the support frame for pellicle, and the second support frame part includes a second body part having a flat plate-shaped frame shape and a second engaging portion of the second body part engaging with the first engaging portion being arranged in a concave part provided in the thickness direction of the support frame for pellicle.

Pellicle support frame, pellicle, method for manufacturing pellicle support frame, and exposure original plate and exposure device employing pellicle

A pellicle for EUV exposure that has a high transmittance to EUV light, causes little outgassing, and is not much contaminated, and a method for manufacturing the same are provided. A pellicle () includes a pellicle film (); a support frame (); and a first adhesive layer () provided at an end of the support frame, the end being opposite to an end on which the pellicle film is extended. The pellicle further includes an inorganic layer () on a side surface of the first adhesive layer, the side surface extending in a direction crossing a surface of the pellicle film, and the pellicle film being extended on the side surface. The inorganic layer has a mass absorption coefficient (&#x3bc;) in the range of 5&#xd7;10cm/g to 2&#xd7;10cm2/g.

Pellicle, exposure original plate, exposure device, and semiconductor device manufacturing method

Provided are a pellicle film, a pellicle frame and a pellicle having a higher EUV transmittance. An exposure pattern plate capable of performing EUV lithography with the pellicle film, the pellicle frame or the pellicle, and a method for producing a semiconductor device, are provided. A pellicle film for exposure extendable over an opening of a support frame and having a thickness of 200 nm or less is provided. The film includes a carbon nanotube sheet. The carbon nanotube sheet includes bundles each including a plurality of carbon nanotubes, the bundles each have a diameter of 100 nm or shorter, and the bundles are aligned in a planar direction in the carbon nanotube sheet.

Pellicle film, pellicle frame, pellicle, method for producing same, original plate for light exposure, light exposure apparatus and method for manufacturing semiconductor device

A method for producing a pellicle according to the one embodiment of the present invention produces a pellicle including a pellicle film and a pellicle frame supporting an outer peripheral portion of the pellicle film. The method includes forming the pellicle film on a substrate, and bonding a pressure-sensitive adhesive sheet, that is elastic and has a pressure-sensitive adhesive force thereof decreased upon receipt of external stimulation, to each of two surfaces of the substrate; making a notch inside a part of the substrate, the part having the pressure-sensitive adhesive sheets bonded thereto; separating a substrate outer peripheral portion outer to the notch of the substrate, in a state where the pressure-sensitive adhesive sheets are bonded to the substrate, to form a pellicle frame; and stimulating the pressure-sensitive adhesive sheets to peel off the pressure-sensitive adhesive sheets.

Pellicle manufacturing method and method for manufacturing photomask with pellicle

The purpose of the present invention is to provide: a pellicle frame which is not susceptible to deterioration even if irradiated with short-wavelength light such as excimer light, and which is not susceptible to generation of an outgas or foreign substance; and a pellicle which uses this pellicle frame. In order to achieve the above-described purpose, this pellicle frame for supporting the outer periphery of a pellicle film is configured to comprise a frame and a film that is formed on the surface of the frame and contains a polyimide resin.

Pellicle frame, pellicle containing same, method for producing pellicle frame, and method for producing pellicle

Provided are a pellicle for extreme ultraviolet light lithography, a method for producing the same, and an exposure method. A pellicle according to the present invention includes a first frame having a pellicle film located thereon; a second frame supporting the first frame; a through-hole running through the first frame; and a filter covering the through-hole on the side of a surface of the first frame on which the pellicle film is located. The through-hole may run through the pellicle film; and the filter may be located on the pellicle film. The filter may be located, adjacent to the pellicle film, on the first frame.

Pellicle, pellicle production method and exposure method using pellicle

Provided are a pellicle for extreme ultraviolet light lithography, a production method thereof, and an exposure method. A pellicle according to the present invention includes a first frame having a pellicle film located thereon; a second frame including a thick portion including a first surface carrying a surface of the first frame opposite to a surface on which the pellicle film is located, and also including a second surface connected with the first surface and carrying a side surface of the first frame, the second frame enclosing the pellicle film and the first frame; a through-hole provided in the thick portion of the second frame; and a filter located on an outer side surface of the second frame and covering the through-hole, the outer side surface crossing the surface of the first frame on which the pellicle film is located.

Pellicle, production method thereof, exposure method

A pellicle is contaminated with dust or the like for various reasons during the production thereof. Especially, there is a problem that the risk that the dust or the like is attached is high during trimming or various other processes performed on a pellicle film. The present invention provides a method for producing a pellicle for EUV that decreases the attachment of dust or the like. A method for producing a pellicle includes forming a pellicle film on a substrate; trimming the substrate; and removing at least a part of the substrate after trimming the substrate. Before the part of the substrate is removed, at least particles attached to a surface of the pellicle film are removed.

Pellicle film, pellicle frame, pellicle, and method for producing same

A pellicle frame containing a frame body, the frame body having a groove formed in one end surface of the frame body, the one end surface being an end surface in a thickness direction of the frame body that is located at a side configured to support a pellicle membrane, and a through-hole that penetrates through a portion between an outer circumferential surface of the frame body and a wall surface of the groove formed in the one end surface.

Pellicle frame, pellicle and method of manufacturing the same, original plate for exposure and method of manufacturing the same, exposure device, and method of manufacturing semiconductor device

Disclosed is a film composed of a resin having a thiourethane bond, wherein the molar ratio (S/N) of sulfur to nitrogen contained in the resin is equal to or more than 0.8 and less than 3. A method for manufacturing a film is also disclosed. The disclosed film is excellent in a balance among high refractive index, low birefringence and light transmittance, and further excellent in a balance of mechanical characteristics such as toughness, hardness and dimensional stability, so that effects of deformation and the like during processing are very small, and the film is further excellent in solvent resistance as well.

Film containing a resin having a thiourethane bond and uses thereof

A pellicle membrane includes a film consisting of an organic material and an inorganic material, wherein a region containing an organic material and a region consisting of an inorganic material are present in the same plane of the film, and wherein at least a central portion of the film is a region consisting of an inorganic material, and at least a peripheral edge portion of the film is a region containing an organic material.

Pellicle membrane, pellicle, original plate for exposure, exposure apparatus, and method of producing semiconductor device

Provided is a support frame for pellicles which includes an aluminum alloy-made frame body with a pellicle film bonded to a front surface of the frame body, and with a glass substrate bonded to a back surface of the frame body. A front-side recessed groove extending in a circumferential direction of the frame body is formed on the front surface of the frame body, and a front-side suction hole extending from an outer peripheral surface of the frame body to an inner surface of the front-side recessed groove is formed on the frame body.

Growing community of inventors

Sodegaura, Japan

Yosuke Ono