Kioxia Corporation

Toshiba Memory Corporation

Yosuke Mitsuno

Tomohiro Kuki

Tatsufumi Hamada

Shinichi Sotome

Hiroshi Nakaki

Tatsuya Okamoto

Yuya Akeboshi

Muneyuki Tsuda

Yusuke Morikawa

In one embodiment, a method of manufacturing a semiconductor device includes forming a stacked film alternately including first layers and second layers in a first direction, forming a hole extending in the first direction in the stacked film, and forming a first insulator on a side face of the stacked film in the hole. The method further includes removing the first insulator in the hole to expose a first part of the side face of the stacked film at a predetermined height in the first direction of the hole and to expose a side face of the first insulator remaining on a second part of the side face of the stacked film at the predetermined height. The method further includes forming a second insulator on the first part of the side face of the stacked film and the side face of the remaining first insulator in the hole.

Three-dimensional type NAND memory device

According to one embodiment, a semiconductor storage device includes a substrate, a first electric charge holder, and a channel layer. At least a part of the first electric charge holder is curved in a first cross section along a surface of the substrate. The channel layer is inside the first electric charge holder in the first cross section. At least a part of the channel layer is curved in the first cross section. The first electric charge holder has a curvature varying in accordance with a position in the first cross section. The channel layer has a film thickness varying in accordance with the curvature of the first electric charge holder in the first cross section.

Semiconductor storage device and method of manufacturing semiconductor storage device

A semiconductor storage device includes a first stacked body, a second stacked body, an intermediate insulating layer, and a plurality of columnar bodies. The intermediate insulating layer is located between a first stacked body and a second stacked body and has a thickness in the stacking direction larger than that of one insulating layer in the plurality of insulating layers of the first stacked body. The plurality of columnar bodies are provided over the first stacked body and the second stacked body, and each columnar body includes a semiconductor body, a charge storage film provided between at least one of the plurality of conductive layers and the semiconductor body, and a semiconductor film. Each of the plurality of columnar bodies include a first columnar portion formed in the first stacked body, a second columnar portion formed in the intermediate insulating layer, and a third columnar portion formed in the second stacked body. A width of the semiconductor film in the second columnar portion in a direction intersecting the stacking direction is the shortest at an upper end of the intermediate columnar portion and the longest at a lower end of the intermediate columnar portion.

Semiconductor storage device and method for manufacturing semiconductor storage device

A semiconductor storage device includes: conductive layers arranged in a first direction; a first insulating layer extending in the first direction; a first semiconductor layer between the conductive layers and the first insulating layer; and a gate insulating film between the conductive layers and the first semiconductor layer. The first semiconductor layer includes a first region between a first insulating portion and the first conductive layer, a second region between a second insulating portion and the second conductive layer, and a third region between the first region and the second region. The third region includes a fourth region extending in a second direction, a fifth region between the first region and the fourth region, a sixth region between the second region and the fourth region, and a seventh region between the fifth region and the first region and extending in the first direction.

Semiconductor storage device and manufacturing method thereof

According to one embodiment, a semiconductor memory device includes a stacked body of first conductor layers and second conductor layers. A pillar including a semiconductor layer extends along through the stacked body in a first direction. A charge storage layer is between the conductor layers and the semiconductor layer. The semiconductor layer includes a first portion extending along the first direction from an uppermost first conductor layer to a lowermost second conductor layer and a second portion above the first portion in the first direction. The second portion has a diameter that decreases with increasing distance along the first direction from the first portion.

Semiconductor memory device and manufacturing method of semiconductor memory device

A semiconductor memory device includes a first semiconductor well of a first conductivity type in a memory cell region and a contact region of a substrate, a second semiconductor well of a second conductivity type in the first semiconductor well in the contact region, a plurality of electrode films stacked on the first semiconductor well and spaced from one another in a first direction, the plurality of electrode films extending in a second direction within the memory cell region into the contact region, a first semiconductor pillar extending in the second direction through the plurality of electrode films in the memory cell region, a second semiconductor pillar extending in the second direction through at least one electrode film in the contact region, a charge storage film between the first semiconductor pillar and each electrode film, an insulating film between the second semiconductor pillar and the at least one electrode film.

Growing community of inventors

Yokkaichi Mie, Japan

Yosuke Mitsuno