Toppan Printing Co., Ltd.

Shin-etsu Chemical Co., Ltd.

Nec Corporation

Yosuke Kojima

Yukio Inazuki

Hiroki Yoshikawa

Takashi Haraguchi

Satoshi Okazaki

Yuichi Fukushima

Tadashi Saga

Kazuaki Chiba

Ryuji Koitabashi

Hideo Kaneko

Tomohito Hirose

Jun Sasaki

Toshio Konishi

Keishi Tanaka

Masao Otaki

Tatsuya Nagatomo

Yoshifumi Sakamoto

Satoru Nemoto

Sathoshi New Functional Materials Research Ctr Okazaki

Hiroki New Functional Materials Res Ctr  Yoshikawa

Yukio New Functional Materials Research Ctr Inazuki

A photomask blank and a photomask having favorable wafer transfer characteristics and irradiation resistance. A photomask blank is for fabricating a photomask for an exposure wavelength of 193 nm, the photomask blank comprising: a light-transmissive substrate; a phase shift film formed on the light-transmissive substrate and providing phase shift effects of a light transmittance of at least 30% with respect to exposure light; and a light-shielding film formed on the phase shift film. The phase shift film is constituted by lamination of: a first phase shift film (that uses a silicon nitride-based material, has a refractive index n1 of 2.5 to 2.7, and an extinction coefficient k1 of 0.2 to 0.4; and a second phase shift film that uses a silicon oxynitride-based material, has a refractive index n2 of 1.55 to 2.20, and an extinction coefficient k2 greater than 0 but no greater than 0.1.

Photomask blank, photomask, and photomask manufacturing method

According to one embodiment, a photomask blank wherein a second film is stacked on a first film, the first film containing chromium and which is not substantially etched by the dry etching using fluorine and which is etchable by the dry etching using oxygen-containing chlorine, and the second film containing no chromium and which is etchable by dry etching using fluorine and dry etching using oxygen-containing chlorine.

Photomask blank and method for manufacturing photomask

Apparatus and method capable of extracting a part where information highly necessary for a user is displayed without using information registered in advance. The method includes detecting an operation part in a screen, comparing a first screen and a second screen, determining a priority order of objects in the first and second screens based on a result of the comparing and displaying at least one of the objects in the first and second screens on a display device based on the priority order. The screen is changed to the first screen by first operation of the operation part and the screen is changed to the second screen by a second operation of the operation part.

Apparatus, a method and a program thereof

A light pattern exposure method is by irradiating ArF excimer laser light to a resist film through a halftone phase shift mask. The mask includes a transparent substrate and a pattern of halftone phase shift film of a material comprising a transition metal, silicon, nitrogen and oxygen and having an atomic ratio (Met/Si) of 0.18-0.25, a nitrogen content of 25-50 atom %, and an oxygen content of 5-20 atom %. The mask may be irradiated with ArF excimer laser light in a cumulative dose of at least 10 kJ/cm.

Light pattern exposure method, halftone phase shift mask, and halftone phase shift mask blank

A light pattern exposure method is by irradiating ArF excimer laser light to a resist film through a photomask. The photomask includes a transparent substrate and a pattern of optical film of a material comprising a transition metal, silicon, nitrogen and oxygen, with contents thereof falling in a specific range. The photomask may be irradiated with ArF excimer laser light in a cumulative dose of at least 10 kJ/cm.

Light pattern exposure method, photomask, and photomask blank

A photomask blank has a film of a transition metal/silicon base material comprising a transition metal, silicon, oxygen and nitrogen, having an oxygen content of at least 3 atom %, and satisfying the formula: 4&#xd7;C/100&#x2212;6&#xd7;C/100&#x3e;1 wherein Cis a silicon content in atom % and Cis a transition metal content in atom %.

Photomask blank and making method, photomask, light pattern exposure method, and design method of transition metal/silicon base material film

A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.

Photomask blank and photomask

A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.

Photomask blank and photomask making method

A phase-shift mask including a transparent substrate, and a light-shielding film formed on the transparent substrate and provided with first apertures and second apertures which are alternately arranged. The transparent substrate is partially removed through the second apertures to form a recessed portion having a predetermined depth. Light transmitted through the first apertures and light transmitted through the second apertures are enabled to alternately invert in phase thereof. This phase-shift mask is characterized in that a phase shift of transmitted light is set in conformity with a pitch between an edge of the first aperture and an edge of the second aperture of the light-shielding film.

Phase-shift mask, manufacturing method thereof and manufacturing method of semiconductor element

A Levenson type phase shift mask has a light shielding portion and openings formed on a transparent substrate. The transparent substrate at the openings is partially dug in or a transparent film is partially disposed on the transparent substrate at the openings to form shifter openings and non-shifter openings. The shifter openings and the non-shifter openings repetitively exist in the mask. The shifter openings invert a phase of transmitted light. The Levenson type phase shift mask has a light shielding portions pattern interposed from both sides between the adjacent openings of the same kind. The light shielding portions pattern is subjected to bias correction which expands the light shielding portions pattern to both sides thereof in a predetermined amount with respect to a predetermined design line width set by a design of the mask.

Growing community of inventors

Tokyo, Japan

Yosuke Kojima