Toshiba Memory Corporation

Kioxia Corporation

Tdk Corporation

The University of Tokyo

Yosuke Kobayashi

Katsuya Nishiyama

Kosuke Yazawa

Masatsugu Yamamoto

Kazumi Wada

Shiyun Lin

Peng Huei Lim

According to one embodiment, a magnetic storage device includes a nonvolatile magnetic memory including a magnetoresistance effect element capable of storing data. A magnetic sensor is configured to measure the magnitude of an external magnetic field. A controller is configured to detect errors in the data at first time intervals when the measured magnitude of the external magnetic field is less than a threshold value and to detect errors in the data at second time intervals shorter than the first time interval when the measured magnitude of the external magnetic field is equal to or greater than the threshold value.

Magnetic storage device and control method of magnetic storage device

An electronic component with a metal terminal includes a plurality of electronic components each including an element body and a pair of external electrodes provided on each of a pair of end surfaces facing each other in an X direction in the element body, and disposed in a Y direction, and a pair of plate-shaped metal terminals each including a plurality of joint portions to which external electrodes of the plurality of electronic components are joined, and a leg portion provided to protrude further than the electronic component in a Z direction, wherein a portion of the metal terminal that extends in the Y direction to straddle the plurality of joint portions is an easily deformable portion made of a second metal material having a Young's modulus smaller than that of a first metal material constituting the other portion.

Electronic apparatus with a metal terminal having portions of differing elasticity

A semiconductor storage device includes a plurality of memory cells and a first circuit. The first circuit is configured to read data from a subset of the memory cells, such as a page unit or the like, then determine whether the data as read from the subset contains an error. The first circuit calculates a bit error rate for the subset if the subset contains an error and performs a recovery processing on the subset if the calculated bit error rate is less than a first threshold value but greater than a second threshold value.

Semiconductor storage device

According to one embodiment, a screening method includes performing a first screening operation on a memory device at a first temperature to detect a defect in magnetoresistive effect elements of the memory device, replacing a first magnetoresistive effect element that is determined as defective in the first screening operation by substituting a second magnetoresistive effect element disposed in a redundancy area of the memory device for the first magnetoresistive, and performing a second screening operation on the memory device at a second temperature higher than the first temperature if the first screening operation detects a defect. Each of the first screening operation and the second screening operation includes writing data into the magnetoresistive effect element, reading data from the magnetoresistive effect element after the writing, and determining a magnetoresistive effect element is defective when the data as written does not match the data as read.

Screening method for magnetic storage device, screening apparatus for magnetic storage device, and manufacturing method of magnetic storage device

A light-emitting device having a ring optical resonator and capable of laser oscillation by a novel structure realized by working out the mechanism of light emission. The light-emitting device having a ring optical resonator fabricated on a base is characterized in that the optical resonator has a core made of a semiconductor and serving to propagate light and a clad formed on at least the base side of the core in the stack direction out of the base side and the opposite side of the core, at least the ring inner and outer peripheral surfaces of the core are covered with a transparent body having an index of refraction lower than that of the space or the clad, and a part of the ring inner and outer peripheral surfaces of the clad are covered with a transparent body having an index of refraction lower than that of the space or the clad.

Growing community of inventors

Tokyo, Japan

Yosuke Kobayashi