Kioxia Corporation

Yosuke Kobayashi

Masayoshi Iwayama

A magnetic memory device includes a first interconnect, a second interconnect, a memory cell, and a write circuit. The memory cell is electrically coupled between the first interconnect and the second interconnect, and includes a variable resistance element and a switching element. The write circuit supplies a write voltage from the current source circuit or the voltage source circuit to write data into the memory cell. The write circuit supplies the write voltage to one of the first interconnect and the second interconnect using the voltage source circuit during a first period ranging from a first time to a second time. The write circuit supplies the write voltage to one of the first interconnect and the second interconnect using the current source circuit during a second period ranging from a third time to a fourth time.

Magnetic memory device

A memory cell is coupled between first and interconnects and includes a variable resistance element and a switching element. The variable resistance element includes first and second ferromagnetic layers and an insulating layer between the first and second ferromagnetic layers. A first circuit is configured to apply a first voltage to the first interconnect. A second circuit is configured to apply a second voltage to the second interconnect. A third circuit is configured to apply a third voltage to the second interconnect. A fourth circuit is configured to apply a fourth voltage to the first interconnect. A sense amplifier circuit is coupled to the first and second interconnects.

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Seoul, South Korea

Yosuke Kobayashi