Sharp Kabushiki Kaisha Corporation

Semiconductor Energy Laboratory Co., Ltd.

Yosuke Kanzaki

Takuya Matsuo

Hiroshi Matsukizono

Kenichi Okazaki

Junichi Koezuka

Yoshitaka Yamamoto

Shigeyasu Mori

Yukinori Shima

Masao Moriguchi

Shunpei Yamazaki

Masayuki Sakakura

Hidekazu Miyairi

Toshinari Sasaki

Masatoshi Yokoyama

Hiroyuki Miyake

Masahiro Takahashi

Yoshifumi Tanada

Yasuhiro Jinbo

Yasuharu Hosaka

Yasuaki Iwase

Sachiaki Tezuka

Naoya Sakamoto

Masahiro Katayama

Tsutomu Murakawa

Mayuko Sakamoto

Takahiro Sato

Tokuo Yoshida

Manabu Sato

Shunsuke Koshioka

Takayuki Cho

Yuhichi Saitoh

Takashi Ienaga

To provide a novel semiconductor device in which a reduction in channel length is controlled. The semiconductor device includes an oxide semiconductor layer having a crystal part, and a source electrode layer and a drain electrode layer which are in contact with the oxide semiconductor layer. The oxide semiconductor layer includes a channel formation region and an n-type region in contact with the source electrode layer or the drain electrode layer. The crystal orientation of the crystal part is different between the channel formation region and the n-type region.

Semiconductor device and display device comprising an oxide semiconductor channel region having a different crystal orientation than source/drain regions

Variation in the electrical characteristics of transistors is minimized and reliability of the transistors is improved. A display device includes a pixel portionand a driver circuit portionoutside the pixel portion. The pixel portion includes a pixel transistor, a first insulating layerwhich covers the pixel transistor and includes an inorganic material, a second insulating layerwhich is over the first insulating layer and includes an organic material, and a third insulating layerwhich is over the second insulating layer and includes an inorganic material. The driver circuit portion includes a driving transistor for supplying a signal to the pixel transistor, and the first insulating layer covering the driving transistor. The second insulating layer is not formed in the driver circuit portion.

Display device comprising a metal oxide semiconductor channel and a specified insulating layer arrangement

An object is to suppress conducting-mode failures of a transistor that uses an oxide semiconductor film and has a short channel length. A semiconductor device includes a gate electrode, a gate insulating filmformed over the gate electrode, an oxide semiconductor filmover the gate insulating film, and a source electrodeand a drain electrodeformed over the oxide semiconductor film. The channel length L of the oxide semiconductor film is more than or equal to 1 &#x3bc;m and less than or equal to 50 &#x3bc;m. The oxide semiconductor film has a peak at a rotation angle 2&#x3b8; in the vicinity of 31&#xb0; in X-ray diffraction measurement.

Semiconductor device and manufacturing method thereof

A semiconductor device includes: a transistor including a gate electrode, a gate insulating film over the gate electrode, a semiconductor layer over the gate insulating film, and a source electrode and a drain electrode over the semiconductor layer; a first insulating film comprising an inorganic material over the transistor; a second insulating film comprising an organic material over the first insulating film; a first conductive film over the second insulating film and in a region overlapping with the semiconductor layer; a third insulating film comprising an inorganic material over the first conductive film; and a second conductive film over the third insulating film and in a region overlapping with the first conductive film. The absolute value of a first potential applied to the first conductive film is greater than the absolute value of a second potential applied to the second conductive film.

Semiconductor device and display device

A semiconductor device includes a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film in contact with the gate insulating film and including a channel formation region which overlaps with the gate electrode; a source electrode and a drain electrode over the oxide semiconductor film; and an oxide insulating film over the oxide semiconductor film, the source electrode, and the drain electrode. The source electrode and the drain electrode each include a first metal film having an end portion at the end of the channel formation region, a second metal film over the first metal film and containing copper, and a third metal film over the second metal film. The second metal film is formed on the inner side than the end portion of the first metal film.

Oxide semiconductor device and manufacturing method therof

To improve the reliability of a transistor as well as to inhibit fluctuation in electric characteristics. A display device includes a pixel portion and a driver circuit portion outside the pixel portion; the pixel portion includes a pixel transistor, a first insulating film covering the pixel transistor and including an inorganic material, a second insulating film including an organic material over the first insulating film, and a third insulating film including an inorganic material over the second insulating film; and the driver circuit portion includes a driving transistor to supply a signal to the pixel transistor, the first insulating film covering the driving transistor, and the second insulating film over the first insulating film, and further includes a region in which the third insulating film is not formed over the second insulating film or a region in which the second insulating film is not covered with the third insulating film.

Display device and electronic device

A manufacturing method of a microcrystalline silicon film includes the steps of forming a first microcrystalline silicon film over an insulating film by a plasma CVD method under a first condition; and forming a second microcrystalline silicon film over the first microcrystalline silicon film under a second condition. As a source gas supplied to a treatment chamber, a deposition gas containing silicon and a gas containing hydrogen are used. In the first condition, a flow rate of hydrogen is set at a flow rate 50 to 1000 times inclusive that of the deposition gas, and the pressure inside the treatment chamber is set 67 to 1333 Pa inclusive. In the second condition, a flow rate of hydrogen is set at a flow rate 100 to 2000 times inclusive that of the deposition gas, and the pressure inside the treatment chamber is set 1333 to 13332 Pa inclusive.

Microcrystalline silicon film, manufacturing method thereof, semiconductor device, and manufacturing method thereof

To inhibit a metal element contained in a glass substrate from being diffused into a gate insulating film or an oxide semiconductor film. A semiconductor device includes a glass substrate, a base insulating film formed using metal oxide over the glass substrate, a gate electrode formed over the base insulating film, a gate insulating film formed over the gate electrode, an oxide semiconductor film which is formed over the gate insulating film and overlapping with the gate electrode, and a source electrode and a drain electrode which are electrically connected to the oxide semiconductor film. In a region of the base insulating film that is present in a range of 3 nm or less from a surface of the base insulating film, the concentration of a metal element contained in the glass substrate is less than or equal to 1&#xd7;10atoms/cm.

Semiconductor device

The semiconductor conductor device includes a gate electrode, an oxide semiconductor film, a source electrodeand a drain electrode, and a channel region formed in the oxide semiconductor film. The channel region is formed between a first side surfaceof the source electrode and a second side surfaceof the drain electrode opposite to the first side surface. The oxide semiconductor film has a side surface which overlaps with the gate electrode, which has a first high resistance region positioned between a first regionthat is the nearest to one endof the first side surfaceand a second regionthat is the nearest to one endof the second side surface. The first high resistance region has a corrugated side surface or the like.

An object is to provide a manufacturing method of a microcrystalline silicon film with improved adhesion between an insulating film and the microcrystalline silicon film. The microcrystalline silicon film is formed in the following manner. Over an insulating film, a microcrystalline silicon grain having a height that allows the microcrystalline silicon grain to be completely oxidized by later plasma oxidation (e.g., a height greater than 0 nm and less than or equal to 5 nm), or a microcrystalline silicon film or an amorphous silicon film having a thickness that allows the microcrystalline silicon film or the amorphous silicon film to be completely oxidized by later plasma oxidation (e.g., a thickness greater than 0 nm and less than or equal to 5 nm) is formed. Plasma treatment in an atmosphere including oxygen or plasma oxidation is performed on the microcrystalline silicon grain, the microcrystalline silicon film, or the amorphous silicon film, so that a silicon oxide grain or a silicon oxide film is formed over the insulating film. A microcrystalline silicon film is formed over the silicon oxide grain or the silicon oxide film.

Manufacturing method of microcrystalline silicon film and manufacturing method of thin film transistor

A semiconductor deviceaccording to the present invention includes an active layersupported on a substrateand having two channel regions, a source region, a drain region, and an intermediate regionformed between the two channel regions; a contact layerhaving a source contact region, a drain contact region, and an intermediate contact region; a source electrode; a drain electrode; an intermediate electrode; and a gate electrodefacing the two channel regions and the intermediate region through a gate insulating filminterposed therebetween. An entire portion of the intermediate electrodethat is located between the first channel regionand the second channel regionoverlaps the gate electrodethrough the intermediate regionand the gate insulating film

Thin film transistor with recess

Growing community of inventors

Osaka, Japan

Yosuke Kanzaki