Denka Company Limited

Denki Kagaku Kogyo Kabushiki Kaisha

Yosuke Ishihara

Takeshi Miyakawa

Hideo Tsukamoto

Daisuke Goto

Hideki Hirotsuru

Hiroaki Ota

Shinya Narita

Kazunori Koyanagi

A production method for an aluminum-diamond composite having a step of providing a laminate structure including a composition layer containing a diamond powder in an opening of a flat plate-like porous material having the opening so as to be separated from an inner circumferential surface of the opening and a step of press-fitting a melt of a metal containing aluminum into a space between the porous material and the laminate structure and impregnating the composition layer with the melt to form a composited part containing aluminum and diamond and forming metal layers on at least side surfaces of the laminate structure, in which the laminate structure includes a first mold release plate, a first inorganic layer, the composition layer, a second inorganic layer and a second mold release plate in this order.

Production method for aluminum-diamond composite

A plurality of heat dissipation substrates stacked on each other, intermediate sheets disposed under a lowermost heat dissipation substrate, on an uppermost heat dissipation substrate, and between heat dissipation substrates adjacent to each other, a drying agent disposed over or under the plurality of heat dissipation substrates, and a bag that seals the plurality of heat dissipation substrates, the plurality of intermediate sheets, and the drying agent.

Package accommodating heat dissipation substrate and packing box

A substantially rectangular flat heat dissipation member includes: a composite portion where silicon carbide having voids is impregnated with metal; and a metal portion that is different from the composite portion. Here, a proportion of a volume of the metal portion to a total volume of the heat dissipation member is 2.9% or higher and 12% or lower. In addition, when a length of a diagonal line of the rectangular flat heat dissipation member is represented by L, in a top view where one main surface of the heat dissipation member is a top surface, 40% or higher of a total volume of the metal portion is present in a region D within a distance of L/6 from an apex of any one of four corners of the heat dissipation member. Further, a hole penetrates the metal portion in the region D.

Heat dissipation member

To provide a method for manufacturing a heat dissipation component having excellent heat dissipation properties, in which there is minimal return of warping after the bonding of a circuit board, and to provide a heat dissipation component manufactured using the method. Provided is a method for manufacturing a warped flat-plate-shaped heat dissipation component containing a composite part that comprises silicon carbide and an aluminum alloy, wherein the method for manufacturing the heat dissipation component is characterized in that the heat dissipation component is sandwiched in a concave-convex mold having a surface temperature of at least 450&#xb0; C. and having a pair of opposing spherical surfaces measuring 7000-30,000 mm in curvature radius, and pressure is applied for 30 seconds or more at a stress of 10 kPa or more such that the temperature of the heat dissipation component reaches at least 450&#xb0; C.

Heat dissipation component and method for manufacturing same

The present invention provides an aluminum-diamond composite which combines high thermal conductivity and a coefficient of thermal expansion close to a semiconductor element, and in which the difference between the thicknesses of both surfaces is reduced so as to be suitable for use as a heat sink etc. for a semiconductor element. Provided is a flat plate-shaped aluminum-diamond composite that has an aluminum-diamond composite part and a surface layer that coats both surfaces of the composite part and includes a metal that has aluminum as a principal component, wherein: the composite part is composed of a composite material that is composed of an aluminum or aluminum alloy matrix and diamond particles dispersed in said matrix; the composite material is composed of a diamond powder in which diamond particles having a particle size of 1-20 &#x3bc;m, inclusive, make up 10-40 vol % of the diamond particles and diamond particles having a particle size of 100-250 &#x3bc;m, inclusive, make up 50-80 vol %, said powder not containing diamond particles having a particle size of less than 1 &#x3bc;m or diamond particles having a particle size of more than 250 &#x3bc;m; and the average value for the differences in in-plane thickness per 50 mm&#xd7;50 mm is 100 &#x3bc;m or less.

Aluminum-diamond-based composite and method for producing same

Provided is an aluminum-diamond-based composite which can be processed with high dimensional accuracy. The flat-plate-shaped aluminum-diamond-based composite is coated with a surface layer of which the entire surface has an average film thickness of 0.01-0.2 mm and which contains not less than 80 volume % of a metal containing an aluminum.

Aluminum-diamond-based composite and heat dissipation component

A heat dissipation component for a semiconductor element includes: a composite part containing 50-80 vol % diamond powder with the remainder having metal including aluminum, the diamond powder having a particle diameter volume distribution first peak at 5-25 &#x3bc;m and a second peak at 55-195 &#x3bc;m. A ratio between a volume distribution area at particle diameters of 1-35 &#x3bc;m and a volume distribution area at particle diameters of 45-205 &#x3bc;m is 1:9 to 4:6; surface layers on both composite part principal surfaces, each of the surface layers containing 80 vol % or more metal including aluminum and having a film thickness of 0.03-0.2 mm; and a crystalline Ni layer and an Au layer on at least one of the surface layers, the crystalline Ni layer having a film thickness of 0.5-6.5 &#x3bc;m, and the Au layer having a film thickness of 0.05 &#x3bc;m or larger.

Heat dissipation component for semiconductor element

A sheet-shaped aluminum-diamond composite containing a prescribed amount of a diamond powder wherein a first and second peak in a volumetric distribution of particle sizes occurs at 5-25 &#x3bc;m and 55-195 &#x3bc;m, and a ratio between an area of a volumetric distribution of particle sizes of 1-35 &#x3bc;m and 45-205 &#x3bc;m is from 1:9 to 4:6, the composite including an aluminum-containing metal as the balance, wherein the composite is covered, on both main surfaces, with a surface layer having prescribed film thicknesses and containing 80 vol % or more of an aluminum-containing metal, two or more Ni-containing layers are formed on at least the surface layer, the Ni-containing layers being such that a first and second layer from the surface layer side are amorphous Ni alloy layers having prescribed thicknesses, and an Au layer having a prescribed thickness is formed as an outermost layer.

A composite is obtained by press-molding a mixed powder comprising 20-50 vol % of a metal powder and 50-80 vol % of a diamond powder for which a first peak in a volumetric distribution of particle size lies at 5-25 &#x3bc;m, and a second peak lies at 55-195 &#x3bc;m, and a ratio between the area of a volumetric distribution of particle sizes of 1-35 &#x3bc;m and the area of a volumetric distribution of particle sizes of 45-205 &#x3bc;m is from 1:9 to 4:6, thereby obtaining a composite having a high thermal conductivity and a coefficient of thermal expansion close to that of semiconductor devices, which is easy to mold into a prescribed shape.

Composite body and method for manufacturing same

An aluminum-diamond composite that exhibits both high thermal conductivity and a coefficient of thermal expansion close to that of semiconductor devices, and that can suppress the occurrence of swelling, etc., of a surface metal layer portion even in actual use under a high load. An aluminum-diamond composite includes 65-80 vol % of a diamond powder having a roundness of at least 0.94, for which a first peak in a volumetric distribution of grain size lies at 5-25 &#x3bc;m, and a second peak lies at 55-195 &#x3bc;m, and a ratio between the area of the volumetric distribution of grain sizes of 1-35 &#x3bc;m and the area of the volumetric distribution of grain sizes of 45-205 &#x3bc;m is from 1:9 to 4:6; the balance being composed of a metal containing aluminum.

Aluminum-diamond composite, and heat dissipating component using same

Disclosed is a heat dissipating component for a semiconductor element, having a tabular body 0.4-6 mm in thickness containing 40-70 volume % of diamond particles, with the balance comprising metal of which the principal component is aluminum, and coated on both surfaces by a coating layer comprising metal of which the principal component is aluminum, or an aluminum-ceramic based composite material, to form an aluminum-diamond based composite body. On at least the two major surfaces thereof are formed, in order from the major surface side, (1) an amorphous Ni alloy layer 0.1-1 &#x3bc;m in film thickness, (2) an Ni layer 1-5 &#x3bc;m in film thickness, and (3) an Au layer 0.05-4 &#x3bc;m in film thickness, the ratio of the Ni alloy layer and the Ni layer (Ni alloy layer thickness/Ni layer thickness) being 0.3 or less.

Heat dissipating component for semiconductor element

A substrate for an LED light emitting element having a small difference of linear thermal expansion coefficient with the III-V semiconductor crystal constituting an LED, having an excellent thermal conductivity, and suitable for high output LEDs. A porous body comprises one or more materials selected from silicon carbide, aluminum nitride, silicon nitride, diamond, graphite, yttrium oxide, and magnesium oxide and has a porosity that is 10 to 50 volume % and a three-point bending strength that is 50 MPa or more. The porous body is infiltrated, by means of liquid metal forging, with aluminum alloy or pure aluminum at an infiltration pressure of 30 MPa or more, cut and/or ground to a thickness of 0.05 to 0.5 mm and to a surface roughness (Ra) of 0.01 to 0.5 &#x3bc;m, then is formed with a metal layer comprising one or more elements selected from Ni, Co, Pd, Cu, Ag, Au, Pt and Sn on its surface to a thickness of 0.5 to 15 &#x3bc;m, so as to thereby produce the composite substrate for the LED light emitting element.

Composite substrate for LED light emitting element, method of production of same, and LED light emitting element

Disclosed is a clad material for an LED light-emitting element holding substrate in which a plurality of layers composed of different materials are stacked and bonded via a metal layer to a III-V group semiconductor crystal surface, the linear expansion coefficient being 14&#xd7;10/K or less and the thermal conductivity at a temperature of 25&#xb0; C. being 200 W/mK or greater. The clad material is composed of three alternately stacked layers: two copper layers and a molybdenum layer, the molybdenum layer being 10 to 60 vol % and the difference in thickness between the copper layers being 5% or less; or a clad material composed of three copper layers alternately stacked with molybdenum layers to make five layers, the molybdenum layers being 20 to 70 vol % and the difference in thickness between the top and bottom two copper layers and the molybdenum layers being 5% or less.

Clad material for LED light-emitting element holding substrate, and method for manufacturing same

Provided is a wafer for LED mounting having a small difference in thermal expansion coefficient from an LED and having excellent heat conductivity, a method for manufacturing the wafer for LED mounting, and an LED-mounted structure manufactured by using the wafer for LED mounting. The wafer for LED mounting () is constituted of a metal infiltrated ceramic composite () and a protective layer () that is formed therearound. The metal infiltrated ceramic composite () preferably has a thin metal layer () on a surface thereof. The method for manufacturing the wafer is characterized by comprising filling at least one selected from the group consisted of porous ceramic bodies, ceramic powder compacts and ceramic powders into a tubular body made of metal or ceramic, then impregnating a metal into the void of at least one selected from the group consisted of porous ceramic bodies, ceramic powder compacts and ceramic powders, and thereafter performing a process.

Growing community of inventors

Omuta, Japan

Yosuke Ishihara