Hitachi, Ltd.

Kokusai Elect. Co. Ltd.

Yosuke Inoue

Takaya Suzuki

Mutsuhiro Mori

Masaki Shiraishi

Atsuo Watanabe

Takashi Aoyama

Akihiro Miyauchi

Noboru Akiyama

Masahiro Okamura

Takuzo Ogawa

Kozo Sakamoto

Mitsuru Ura

Takasumi Ohyanagi

Shinya Iida

Michiyoshi Maki

Hiroo Tochikubo

Masahiro Wanami

Masato Fujita

Akira Kabashima

Masayoshi Nomura

In a semiconductor device having a first terminal (source terminal) and a second terminal (drain terminal), the substrate main surface of a semiconductor chip is on the ( ) face, the main contact face of an n-type region and a p-type region is the &lcub; &rcub; face perpendicular to the ( ) face, elongated n-type regions and elongated p-type regions , which are arranged alternately, form a voltage holding area. The first terminal is connected to the p-type regions through wiring, and the second terminal is connected to the n-type regions . Also, the p-type region is formed to cover the bottom comers of a gate polycrystalline silicon layer

Power semiconductor device

The vapor phase growth on semiconductor wafers is carried out by an apparatus in which a multiplicity of semiconductor wafers are held by a holder so that the semiconductor wafers lie one over another in a vertical direction, and are rotated together with the holder, the holder is placed in a heater disposed in a reaction vessel, a raw material gas supply nozzle and a raw material gas exhaust nozzle are provided within the heater so that the semiconductor wafers are interposed between the gas supply nozzle and the gas discharge nozzle, and the gas supply nozzle and the gas discharge nozzle have gas supply holes and gas discharge holes, respectively, so that a raw material gas can flow on each semiconductor wafer in horizontal directions. When the temperature of the heater is raised by a heating source to heat the semiconductor wafers, the raw material gas is supplied from the gas supply holes to each semiconductor wafer, and thus a uniform layer is grown on each semiconductor wafer from the raw material gas.

Vapor phase growth on semiconductor wafers

Cleaning system to clean articles to remove foreign matters from surfaces of the articles. At least two treatment baths filled with respective cleaning liquids are provided. An intermediate bath is located between the adjacent two treatment baths. The intermediate bath is filled with the cleaning liquid filled in one of a pair of the adjacent treatment baths adjacent to the intermediate bath, and the cleaning liquid filled in the intermediate bath is then replaced with the cleaning liquid filled in the other treatment bath. At least one of the articles is moved successively from a first to the last one of the at least two treatment baths and through at least one the intermediate bath, while the article is maintained continuously and completely immersed in the cleaning liquid.

System for cleaning articles

A method of forming by CVD technique a layer of material with good uniformity and reproducibility on the surfaces of a plurality of substrates supported within the reaction chamber. The feature of the invention is that a gaseous mixture containing a reaction gas is supplied into the reaction chamber from the inlet of the reaction chamber and the auxiliary gas nozzle provided between the inlet and the exhaust in a predetermined control manner. Moreover, part of the gaseous mixture within the reaction chamber is sampled from the gas flow for the measurement of the concentration of the reaction gas, and from the measured results is determined the rate of gas supply from the auxiliary gas nozzle.

Method for chemical vapor deposition

In a method of doping impurities comprising mixing a carrier gas, a semiconductor compound gas and a doping gas and leading the mixed gas to a reaction chamber to form a semiconductor layer or a semiconductor oxide layer doped with impurities on a substrate inside the chamber, a part of the doping gas before mixing the doping gas with the other gases is taken and led to a gas analyzer and impurity concentration in the doping gas is monitored to control the impurity concentration in the doping gas.

Method of doping inpurities

Growing community of inventors

Ibaraki, Japan

Yosuke Inoue