Tokyo Electron Limited

Yosuke Hachiya

Naoki Shindo

Norihiro Ito

Kazuhiro Aiura

Hisashi Kawano

Takao Inada

Takashi Nagai

Naoyuki Okamura

Kotaro Ooishi

Hidetsugu Yano

Takehiko Orii

Jiro Higashijima

Itaru Kanno

Tadashi Iino

Yusuke Hashimoto

Norihiro Itoh

Keisuke Egashira

Yuki Ito

Shinichiro Shimomura

Jun Nogami

Yasuyuki Ido

A substrate processing apparatus comprises a holder configured to hold a substrate; a processing liquid supply configured to supply a processing liquid onto the substrate held by the holder; and a resistance value varying mechanism configured to vary an electrical resistance of the holder in contact with the substrate.

Substrate processing apparatus with resistance value varying mechanism

Disclosed is a substrate liquid processing apparatus. The substrate liquid processing apparatus includes a processing unit, a nozzle, a silylation liquid supply mechanism, and a blocking fluid supply mechanism. The processing unit performs a water repellency imparting processing on a substrate by supplying a silylation liquid to the substrate. The nozzle includes an ejection port configured to supply the silylation liquid to the substrate positioned in the processing unit, and a silylation liquid flow path in which the silylation liquid flows toward the ejection port. The silylation liquid supply mechanism supplies the silylation liquid to the silylation liquid flow path in the nozzle through a silylation liquid supply line. The blocking fluid supply mechanism supplies a blocking fluid that blocks the silylation liquid within the silylation liquid flow path in the nozzle from an atmosphere outside the ejection port.

Substrate liquid processing apparatus having nozzle with multiple flow paths and substrate liquid processing method thereof

A liquid treatment apparatus includes a substrate holder () that holds a substrate horizontally and rotates the substrate, a treatment liquid nozzle () that supplies a treatment liquid to the substrate held by the substrate holder, a cup () that is arranged outside of a peripheral edge of the substrate held by the substrate holder and receives the treatment liquid which has been supplied to the substrate by the treatment liquid nozzle, a top plate () that covers the substrate held by the substrate holder from above, a top plate rotation driving mechanism that rotates the top plate, and a liquid receiving member () that surrounds a peripheral edge of the top plate and has a circular liquid receiving space ().

Liquid treatment apparatus

A top plate is provided with a top plate rotation mechanism configured to rotate the top plate in a horizontal plane. An outside cup peripheral case disposed around a cup is configured to move between an upper position, in which a top end of the cylinder is positioned above the cup, and a lower position located below the upper position. A nozzle support arm configured to support a nozzle is moved, in a horizontal direction, between an advanced position, in which the arm is advanced into the outside cup peripheral case via a side opening formed in a side surface of the outside cup peripheral case when the cylinder is located in the upper position, and a retracted position, in which the arm is retracted outward from the outside cup peripheral case.

Liquid process apparatus and liquid process method

The present disclosure provides a substrate processing apparatus including: a substrate processing chamber configured to process a substrate on which a target layer to be removed is formed on the surface of an underlying layer; a substrate holding unit provided in the substrate processing chamber and configured to hold the substrate; a mixed liquid supplying unit configured to supply a mixed liquid of sulfuric acid and hydrogen peroxide to the substrate held by the substrate holding unit in a mixing ratio of the hydrogen peroxide and a temperature that does not damage the underlying layer while removing the target layer; and an OH-group supplying unit configured to supply a fluid containing OH-group to the substrate in an amount that does not damage the underlying layer when the mixed liquid and the OH-group are mixed on the substrate.

Substrate processing apparatus and substrate processing method

A liquid processing method is provided for performing a liquid process on a front surface of a substrate by using a processing solution and then performing a rinse process on the front surface of the substrate by using a rinse solution having a temperature lower than a temperature of the processing solution. The method includes performing an intermediate process between the liquid process and the rinse process, for adjusting a temperature of the front surface of the substrate to a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution. In the intermediate process, an intermediate processing solution having a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution is supplied only to a rear surface of the substrate.

Liquid processing method

Disclosed are a liquid processing apparatus and a liquid processing method that can prevent a substrate in a processing chamber from being contaminated due to contamination attached to a nozzle supporting arm that supports a nozzle. The liquid processing apparatus of the present disclosure includes: a processing chamber having a substrate holding unit configured to hold a substrate and a cup disposed around the substrate holding unit; a nozzle configured to supply a fluid to the substrate held by the substrate holding unit; and a nozzle supporting arm configured to support the nozzle. An arm cleaning unit configured to clean the nozzle supporting arm is installed in the liquid processing apparatus.

Liquid arm cleaning unit for substrate processing apparatus

A top plateis provided to be moved in a horizontal direction between an advanced position, in which the top platecovers from above a substrate W held by a substrate holding unit, and a retracted position that is retracted from the advanced position. An air hoodconfigured to supply a purified gas downward is provided to be lifted between a lower position, in which the air hood covers from above the substrate W held by the substrate holding unit, and an upper position located above the lower position.

There is provided a liquid processing method for performing a liquid process on a front surface of a substrate by using a processing solution and then performing a rinse process on the front surface of the substrate by using a rinse solution having a temperature lower than a temperature of the processing solution. The liquid processing method includes performing an intermediate process between the liquid process and the rinse process, for adjusting a temperature of the front surface of the substrate to a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution.

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Koshi, Japan

Yosuke Hachiya