Sumitomo Electric Industries, Limited

Toyota School Foundation

Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Rikagaku Kenkyusho

Yoshiyuki Yamamoto

Takahiro Imai

Masahiro Adachi

Kiichi Meguro

Issei Satoh

Koji Uematsu

Yasuhiro Sugaya

Tsunehiro Takeuchi

Seiichi Nakatani

Naoji Fujimori

Yoshiki Nishibayashi

Toshiyuki Asahi

Yuki Seki

Hideaki Nakahata

Shingo Komatsu

Michimasa Miyanaga

Makoto Kiyama

Keiichiro Tanabe

Natsuo Tatsumi

Takashi Tsuno

Kotaro Hirose

Seiji Nakahata

Keiji Ishibashi

Shinsuke Fujiwara

Takuji Okahisa

Nobuhiro Ota

Akihiko Ueda

Takashi Sakurada

Keisuke Tanizaki

Takuya Yanagisawa

Naoki Matsumoto

Yusuke Yoshizumi

Akihiro Hachigo

Takashi Matsuura

Naho Mizuhara

Fumitake Nakanishi

Hirohisa Saito

Fuminori Mitsuhashi

Hidenori Mikami

Yuki Hiromura

Masashi Yoshimura

Toshiyuki Kojima

Satoru Yuhaku

Hideki Matsubara

Katsumasa Miki

Yasunori Tateno

Satoshi Arakawa

Ryo Toyoshima

Katsuko Harano

Kazuo Ohtani

Takeshi Nakayama

Katsushi Akita

Koichi Hirano

Norio Okada

Masaaki Katsumata

Tomoki Uemura

Shin Hashimoto

Tsuyoshi Himori

Yoshiaki Kumazawa

Akihiko Namba

Hiroyuki Ishitomi

Tsuneo Urisu

Hideo Kitamura

Satoshi Ooe

Shuji Asaka

Hisaharu Sakae

Shunsuke Nishino

Shunsuke Fujii

Masaaki Kuzuhara

Norimasa Yafune

Yoshiyuki Saitou

Do-Gyun Byeon

Takahiro Sumitomo Electric Industries Ltd Imai

Kiichi Sumitomo Electric Industries Ltd Meguro

A thermoelectric conversion material is represented by a composition formula AgαS, where α is one selected from among Ni, V, and Ti. The value of x is greater than 0 and smaller than 0.6.

Thermoelectric conversion material, thermoelectric conversion element, thermoelectric conversion module, and optical sensor

A thermoelectric conversion material is represented by a composition formula AgSSe, where x has a value of greater than 0.01 and smaller than 0.6.

A thermoelectric conversion material includes a base material that is a semiconductor having Si and Ge as constituent elements, a first additive element that is different from the constituent elements, has a vacant orbital in a d or f orbital located inside an outermost shell thereof, and forms a first additional level in a forbidden band of the base material, and oxygen. The oxygen content ratio is 6 at % or less.

Thermoelectric conversion material, thermoelectric conversion element, thermoelectric conversion module, and light sensor

A thermoelectric conversion material is represented by a composition formula AgSSe. The value of x is not smaller than 0.2 and not greater than 0.95.

A photosensor includes: a support; a thermoelectric conversion material section that is disposed on a first main surface of the support and that includes a plurality of first material layers each having an elongated shape, a plurality of second material layers each having electrical conductivity and an elongated shape, and an insulating film, the first material layers and the second material layers each being configured to convert thermal energy into electrical energy; a heat sink that is disposed on a second main surface of the support and along an outer edge of the support; a light-absorbing film that is disposed in a region surrounded by inner edges of the heat sink as viewed in a thickness direction of the support so as to form temperature differences on the first main surface of the support in longitudinal directions of the first material layers.

Photosensor

A thermoelectric conversion material contains a matrix composed of a semiconductor and nanoparticles disposed in the matrix, and the nanoparticles have a lattice constant distribution Δd/d of 0.0055 or more.

Thermoelectric conversion material, thermoelectric conversion element, thermoelectric conversion module and optical sensor

An optical sensor includes a support layer, a thermoelectric conversion material portion disposed on the support layer and including a strip-shaped first material layer that converts thermal energy into electrical energy and a strip-shaped second material layer that is electrically conductive, and a light absorbing film disposed on the thermoelectric conversion material portion to form a temperature difference in a longitudinal direction of the first material layer. The first material layer includes a first region and a second region. The second material layer includes a third region and a fourth region connected to the second region. The optical sensor further includes a first electrode electrically connected to the first region, and a second electrode disposed apart from the first electrode and electrically connected to the third region. The first material layer has a width, perpendicular to the longitudinal direction, of 0.1 μm or more.

Optical sensor

A multilayer body includes a base portion and a graphene film. In an ion mass distribution versus depth of the multilayer body determined by time-of-flight secondary ion mass spectrometry, detection intensities of Cions have a maximum value at a depth of greater than 0 nm and 2.5 nm or less from an exposed surface. Detection intensities of Cions have a maximum value at a depth of greater than 0 nm and 3.0 nm or less from the exposed surface. Detection intensities of SiCions have a maximum value at a depth of 0.5 nm or greater and 5.0 nm or less from the exposed surface. Detection intensities of SiC ions have a maximum value at a depth of 0.5 nm or greater and 10.0 nm or less from the exposed surface. Detection intensities of Siions have a maximum value at a depth of 0.5 nm or greater and 10.0 nm or less from the exposed surface. A value obtained by dividing the maximum value of the detection intensities of SiCions by an average of detection intensities of SiCions associated with a region of the multilayer body is 1 or greater and 3.5 or less, the region having distances from the exposed surface in a thickness direction of the multilayer body of equal to or greater than 8 nm and 12 nm or less.

Multilayer body and electronic device

A stack includes a base portion consisting of silicon carbide and having a first surface that is a Si face and a carbon atom thin film disposed on the first surface and including a first main surface facing the first surface and a second main surface that is a main surface on an opposite side from the first main surface. The carbon atom thin film consists of carbon atoms. The carbon atom thin film includes at least one of a buffer layer that is a carbon atom layer including carbon atoms bonded to silicon atoms forming the Si face and a graphene layer. The second main surface includes a plurality of terraces parallel to the Si face of the silicon carbide forming the base portion and a plurality of steps connecting together the plurality of terraces.

Stack, electronic device, and method for manufacturing stack

A thermoelectric conversion material is composed of a compound semiconductor including a plurality of base material elements, and includes: an amorphous phase; and crystal phases having an average grain size of more than or equal to 5 nm, each of the crystal phases being in a form of a grain. The plurality of base material elements include a specific base material element that causes an increase of a band gap by increasing a concentration of the specific base material element. An atomic concentration of the specific base material element included in the crystal phases with respect to a whole of the plurality of base material elements included in the crystal phases is higher than an atomic concentration of the specific base material element included in the compound semiconductor with respect to a whole of the plurality of base material elements included in the compound semiconductor.

Thermoelectric conversion material, thermoelectric conversion element, thermoelectric conversion module, optical sensor, and method for manufacturing thermoelectric conversion material

A thermoelectric conversion material includes: a base material that is a semiconductor composed of a base material element; a first additional element that is an element different from the base material element, has a vacant orbital in a d orbital or f orbital located internal to an outermost shell of the first additional element and forms a first additional level in a forbidden band of the base material; and a second additional element that is an element different from both of the base material element and the first additional element and forms a second additional level in the forbidden band of the base material. A difference is 1 between the number of electrons in an outermost shell of the second additional element and the number of electrons in at least one outermost shell of the base material element.

A thermoelectric conversion element includes: a thermoelectric conversion material portion composed of a material having a band gap; a first electrode disposed in contact with the thermoelectric conversion material portion; a second electrode disposed in contact with the thermoelectric conversion material portion and disposed to be separated from the first electrode; and a sealing portion that seals the thermoelectric conversion material portion. A partial pressure of oxygen in a region surrounding the thermoelectric conversion material portion is maintained by the sealing portion so as to be lower than a partial pressure of oxygen in an external air.

Thermoelectric conversion element, thermoelectric conversion module, optical sensor, method of producing thermoelectric conversion material, and method of producing thermoelectric conversion element

A thermoelectric conversion element includes a thermoelectric conversion material portion having a compound semiconductor composed of first base material element A and second base material element B and represented by ABwith value of x being smaller by c with respect to a compound ABaccording to a stoichiometric ratio, a first electrode disposed in contact with the thermoelectric conversion material portion, and a second electrode disposed in contact with the thermoelectric conversion material portion and apart from the first electrode. An A-B phase diagram includes a first region corresponding to low temperature phase, second region corresponding to high temperature phase, and third region corresponding to coexisting phase, sandwiched between the low temperature phase and the high temperature phase, in which the low and high temperature phases coexist. A temperature at a boundary between the first region and the third region changes monotonically with a change in c.

Thermoelectric conversion element

A method of manufacturing a diamond substrate includes: forming an ion implantation layer at a side of a main surface of a diamond seed substrate by implanting ions into the main surface of the diamond seed substrate; producing a diamond structure by growing a diamond growth layer by a vapor phase synthesis method on the main surface of the diamond seed substrate, after implanting the ions; and performing heat treatment on the diamond structure. The performed heat treatment causes the diamond structure to be separated along the ion implantation layer into a first structure including the diamond seed substrate and failing to include the diamond growth layer, and a diamond substrate including the diamond growth layer. Thus, the method of manufacturing a diamond substrate is provided that enables a diamond substrate with a large area to be manufactured in a short time and at a low cost.

Method of manufacturing diamond substrate, diamond substrate, and diamond composite substrate

A thermoelectric material element includes: a thermoelectric material portion composed of a thermoelectric material that includes a first crystal phase and a second crystal phase during an operation, the second crystal phase being different from the first crystal phase; a first electrode disposed in contact with the thermoelectric material portion; and a second electrode disposed in contact with the thermoelectric material portion and disposed to be separated from the first electrode. During the operation, the thermoelectric material portion includes a first temperature region having a first temperature, and a second temperature region having a second temperature lower than the first temperature of the first temperature region. A ratio of the first crystal phase to the second crystal phase in the first temperature region is larger than a ratio of the first crystal phase to the second crystal phase in the second temperature region.

Thermoelectric material element, power generation device, optical sensor, and method for manufacturing thermoelectric material

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Itami, Japan

Yoshiyuki Yamamoto