Tokyo Ohka Kogyo Co., Ltd.

Yoshiyuki Sato

Toshimasa Nakayama

Hidekatsu Kohara

Hatsuyuki Tanaka

Hisashi Nakane

Akira Yokota

Shingo Asaumi

Hatsuyuki Tanka

The pattern-wise photoresist layer formed on the surface of a substrate according to the inventive method is imparted with a greatly improved resolving power as a result of complete removal of the scum residua left after the development treatment. Namely, the positive-working photoresist layer formed on the substrate surface is exposed pattern-wise to actinic rays, developed with a developer solution which is typically a 2-7% aqueous solution of a quaternary ammonium hydroxide and then rinsed with a scum-remover solution which is a mixture of 100 parts of a 0.1-1.5% aqueous solution of a quaternary ammonium hydroxide and 1-30 parts of a water-miscible organic solvent and capable of dissolving away the scum residua in the pattern-wise photoresist layer without affecting the quality of the photoresist pattern reproduction.

Method for forming a resist pattern on a substrate surface and a

The aqueous developing solution of the invention for positive-working photoresist compositions contains, in addition to an organic basic compound free from metallic ions, such as tetramethyl ammonium hydroxide and choline, as the principal ingredient, from 50 to 5000 ppm of an acetylene alcohol. In comparison with conventional developing solutions, the inventive developing solution is advantageous in the uniformity of the patterned photoresist layer, higher sensitivity and smaller temperature dependency of development and less drawbacks due to foaming of the solution.

Developing solution for positive-working photoresist comprising tmah and

The aqueous developer solution for a positive-working photoresist composition comprises, as dissolved in an aqueous solvent, a water-soluble organic basic compound and a specific non-ionic surface active agent which may be an alkyl-substituted phenyl or naphthyl ether of polyoxyethyleneglycol in a specified concentration. The developer solution is advantageous in respect of the completeness of removal of film residua and scums from the substrate surface after development so that the patterned photoresist layer is imparted with greatly increased accuracy and fidelity of the pattern reproduction.

Developer solution for positive-working photoresist compositions

The aqueous developing solution of the invention for positive-working photoresist compositions contains, in addition to an organic basic compound free from metal ions, such as tetramethyl ammonium hydroxide and choline, as the principal ingredient, from 50 to 5000 ppm of an anionic or non-ionic fluorine-containing surface active agent of specific types. In comparison with conventional developing solutions without such a surface active agent, the inventive developing solution is advantageous in the uniformity of the patterned photoresist layer and higher sensitivity and smaller temperature dependency of development.

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Samukawa, Japan

Yoshiyuki Sato