Canon Kabushiki Kaisha

Yoshiyuki Osada

Takashi Nakagiri

Satoshi Omata

Yutaka Hirai

Katsumi Nakagawa

Hiroshi Inoue

Toshiyuki Komatsu

Toshihiko Takeda

Hidetoshi Suzuki

Hisaaki Kawade

Aoji Isono

Eiji Yamaguchi

Hiroaki Toshima

Noritake Suzuki

Yasuyuki Todokoro

Katsunori Hatanaka

Ihachiro Gofuku

Yutaka Inaba

Masao Sugata

Yuji Kasanuki

Mitsutoshi Hasegawa

Masato Yamanobe

Hideshi Kawasaki

Yoshimasa Okamura

Yukitoshi Okubo

Shigetoshi Sugawa

Masafumi Sano

Ichiro Nomura

Hideo Kanno

Masahiko Enari

Shinichi Yamashita

Hisanori Tsuda

Kazuaki Ohmi

Naoto Nakamura

Mitsutoshi Kuno

Shin Kitamura

Katsuji Takasu

Takao Yonehara

Takashi Nakamura

Tetsuya Kaneko

Takeo Tsukamoto

Junichiro Kanbe

Noriyuki Kaifu

Tatsuya Iwasaki

Isamu Shimizu

Hideaki Mitsutake

Toshihiko Miyazaki

Atsushi Mizutome

Shunichi Ishihara

Yasue Sato

Tohru Takahashi

Shinya Mishina

Takeo Ono

Toshihiro Saika

Eiji Sakamoto

Satoshi Itabashi

Tadashi Yamakawa

Yutaka Inoue

Takao Kusaka

Masaki Fukaya

Yasuhiro Hamamoto

Katsuhiko Shinjo

Jun-Ichi Hanna

Hiroshi Satomura

Shunri Oda

Fumio Kishi

Masahiro Okuda

Masahiro Tagawa

Tadashi Kaneko

Yukitoshi Ohkubo

Tomokazu Andoh

Shigeki Yoshida

An electron emitting device includes a first electrode located on a substrate, an insulating layer located on the first electrode, and a second electrode located on the insulating layer. The second electrode has a first surface and a second surface, which are substantially vertical to a direction that the first electrode and the insulating layer are laminated. The first surface of the second electrode is in contact with the insulating layer. A higher potential than that applied to the second electrode is applied to the first electrode to emit an electron from the second surface.

Electron emitting device, electron source, and image forming apparatus

An electron source comprises a substrate, at least one row-directional wire, at least one column-directional wire intersecting the row-directional wire, at least one insulation layer arranged at the intersection of the row-directional wire and the column-directional wire, and at least one conductive film having an electron-emitting region also arranged at the intersection. The insulation layer is arranged between the row-directional wire and the column-directional wire and the conductive film is connected to both wires.

Method of manufacturing an electron source and image forming apparatus using the same

Electron source and image-forming apparatus

This invention relates to an electron source and an image forming apparatus each of which particularly comprises a surface conduction type electron emitting element as an electron emitting element, a method of manufacturing an electron source and an image forming apparatus, in which the energization forming treatment step of the surface conduction type electron emitting element is performed by applying a voltage to an electron emitting portion formation thin film via a nonlinear element connected in series with the thin film and having nonlinear voltage/current characteristics, an electron source and an image forming apparatus in each of which the nonlinear element is connected in series with the surface conduction type electron emitting element, and a method of driving the same.

Method of manufacturing electron source or image forming apparatus using

A photoelectric conversion apparatus of this invention has a high sensitivity and low noise, and can be formed to have a large area at a relatively low temperature since it has a light absorption layer (310), formed of a non-monocrystalline material, for absorbing light and generating photocarriers, and a multiplication layer (301, 303, 305, 307, 309) for multiplying the photocarriers generated by the light absorption layer.

Photoelectric conversion apparatus

An electron emitting device includes a pair of device electrodes disposed at locations opposite to each other, a conductive thin film in contact with both the pair of device electrodes, and an electron emitting region formed in a part of the conductive thin film. The conductive thin film is composed of fine particles including a first metal element serving as a main constituent element and at least one second metal element. The second metal element is to precipitate at the surface of the conductive thin film and thus form a low work function material layer. When a voltage is applied between the pair of device electrodes, the second metal element moves from the inside of the conductive thin film to at least a part of the surface of the conductive thin film.

Electron emitting device having a conductive thin film formed of at

Electron source, image forming apparatus using the same, method of

An electron source comprises a substrate, at least one row-directional wire, at least one column-directional wire intersecting the row-directional wire, at least one insulation layer arranged at the intersection of the at least one row-directional wire and the column-directional wire, and at least one conductive film having an electron-emitting region also arranged at the intersection. The insulation layer is arranged between the row-directional wire and the column-directional wire and the conductive film is connected to both wires.

An image-forming apparatus comprises a back plate carrying thereon a plurality of electron-emitting devices, a face plate arranged vis-a-vis the back plate and carrying thereon a fluorescent member and an anti-atmospheric-pressure spacer. The longitudinal axis of the anti-atmospheric-pressure spacer is arranged substantially in parallel with the direction of deflection of electron beams emitted from said electron-emitting devices.

Image-forming apparatus

An electron source emits electrons as a function of input signals. The electron source includes a substrate, a matrix of wires having m row wires and n column wires laid on the substrate with an insulator layer interposed therebetween, and a plurality of surface-conduction electron-emitting devices each having a pair of electrodes and a thin film including an electron emitting region and arranged between the electrodes. The electron-emitting devices are so arranged as to form a matrix with the electrodes connected to the respective row and column wires. The electron source further includes a selector for selecting a row of the plurality of surface-conduction electron-emitting devices, and a modulator for generating modulation signals according to input signals and applying them to the surface-conduction electron-emitting devices selected by the selector.

Electron source, and image-forming apparatus and method of driving the

A color display device has an evacuated vessel accommodating at least an electron-beam generating source in which a plurality of surface-conduction electron emitting devices are arrayed on a substrate, and phosphors for the three primary colors red, green and blue for emitting light in response to being irradiated with electron beams from the electron-beam generating source. A modulator is provided to modulate the electron beams, which irradiate the phosphors, based upon an image signal, the modulator having .gamma.-corrector for subjecting the image signal to a gamma correction. The modulator modulates the electron beams based upon the image signal corrected in advance by the .gamma.-corrector.

Image forming device and method including surface-conduction electron

A process for forming a deposition film comprises introducing a gaseous starting material for forming a deposition film and a gaseous oxidizing agent having an oxidation action on the gaseous starting material separately into a reaction space to chemically contact these two, thereby generating a plurality of precursors including precursor in an excited state, and utilizing at least one of the generated precursors as a supply source for film-constituting members, thereby forming a deposition film on a substrate provided in a film-forming space, the deposition film being formed while supplying a bias energy to the substrate and changing the intensity of the bias energy.

Process for forming a deposited film by reacting between a gaseous

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Atsugi, Japan

Yoshiyuki Osada