Sharp Kabushiki Kaisha Corporation

Kaneka Corporation

Other

Yoshiyuki Nasuno

Kazuhito Nishimura

Noriyoshi Kohama

Haruya Mori

Takanori Nakano

Tohru Takeda

Yasuaki Ishikawa

Takashi Hayakawa

Hiroshi Yamamoto

Akira Shimizu

Michio Kondo

Akihisa Matsuda

Yoshitaka Sugita

Kenji Wada

Takashi; Hayakawa

A power control system and method for suppressing purchase power peaks or controlling surplus power household consumption according to changes. The power control system comprises a monitoring unit, an electricity storage quantity acquisition unit, and an electricity storage controller. The monitoring unit monitors a generated power quantity which an electricity generator generates using renewable energy and a purchase power quantity which a consumer purchases via a power grid. The electricity storage controller executes processes of discharging power from an electricity storage cell if the purchase power quantity is greater than or equal to a first threshold value; charging the storage cell if the generated power quantity is greater than zero and the purchase power quantity is less than or equal to a second threshold value less than the first threshold value; and charging and discharging the storage cell such that the acquired electricity storage quantity reaches a target value.

Power control system and power control method

A power storage control system reduces the operating cost in a power storage system, and comprises a monitoring section and a charge/discharge control section. The monitoring section monitors a prescribed index value that correlates with the degradation degree of a storage battery for each storage battery included in a plurality of power storage systems. The charge/discharge control section controls the period in which the prescribed index value of each storage battery changes to a prescribed value by degradation accompanying charging and discharging of the storage battery, by performing control relating to at least one of the charge amount or the charge/discharge speed in charging and discharging of the storage battery based on the monitoring results of the monitoring section.

Power storage control system and power storage control method

An abnormality determination system includes a power generation amount measurement unit that measures a power generation amount of the photovoltaic facility; a data acquisition unit that acquires data of a solar radiation amount; a calculation unit that divides a summed value of the power generation amount per day by a summed value of the solar radiation amount per day to calculates a division value; and a data accumulation unit that accumulates a combination of the power generation amount and the solar radiation amount, or the division value, and is configured to determine that there is an abnormality based on a slope of the division values.

Abnormality determination system and power generation system

A power control system, which enables more effective utilization of electrical power generated by using renewable energy, includes a monitoring unit, an output control unit, and a power storage control unit. The monitoring unit monitors the amount of electrical power generated by a power generation device using renewable energy and the amount of electrical power purchased by a consumer through utility grid. When the amount of purchased electrical power is less than a first threshold on the basis of a monitoring result of the monitoring unit, the output control unit suppresses output of electrical power generated by the power generation device. When the amount of the purchased electrical power is less than a second threshold which is greater than the first threshold on the basis of the monitoring result, the power storage control unit charges a storage battery with the generated electrical power outputted by the power generation device.

Laminated body having semiconductor layer and layer thickness measurement portion, and thin-film photoelectric conversion device and integrated thin-film solar cell having the same

A substratefor a photoelectric conversion device includes a first transparent conductive layerformed on at least a part of the surface region of a transparent substrate, the first transparent conductive layerhaving at least an opening portionexposing the substrate

Substrate for photoelectric conversion device, photoelectric conversion device, and stacked photoelectric conversion device

An integrated thin-film solar battery is disclosed. The integrated thin film solar battery includes a plurality of series connected solar cell strings with one or more power collecting electrodes electrically joined to the string. The thin-film photoelectric conversion elements have a first transparent electrode layer and a second transparent electrode layer sandwiching a photoelectric conversion layer. The string has an element separating groove and the first electrode layer has an extending section having one end that crosses the element separating groove and extends to a region of an adjacent element. At least a portion of the first electrode layer just below the power collecting electrodes and another portion of the first electrode layer are insulated and separated from each other by at least one of an electrode separating line and an insulating line.

Integrated thin-film solar battery

A photoelectric conversion device which can improve photoelectric conversion efficiency is provided. The photoelectric conversion device has at least one p-i-n type photoelectric conversion part which includes a first conductivity type layer, a first i-type layer, a second i-type layer and a second conductivity type layer stacked in this order, and it is characterized in that a crystallization ratio of the first i-type layer is lower than that of the second i-type layer and a change rate of a crystallization ratio in a film-thickness direction at an interface between the first i-type layer and the second i-type layer is 0.013 to 0.24 nm.

Photoelectric conversion device and method of producing the same

To provide a stacked photoelectric conversion device and a method for producing the same, in which an interlayer is provided between photoelectric conversion layers to obtain an effect of controlling the amount of incidence light, and carrier recombination at an interface between the interlayer and a semiconductor layer is decreased to enhance photoelectric conversion efficiency. The stacked photoelectric conversion device of the present invention comprises a plurality of silicon-based photoelectric conversion layers having a p-i-n structure stacked, wherein at least a pair of adjacent photoelectric conversion layers have an interlayer of a silicon nitride therebetween, the pair of the photoelectric conversion layers are electrically connected with each other, and a p-type silicon-based semiconductor layer constituting a part of the photoelectric conversion layer and contacting the interlayer contains a nitrogen atom.

Stacked photoelectric conversion device and method for producing the same

To provide a stacked photoelectric conversion device capable of inhibiting extreme decrease of the output in the morning and evening. A stacked photoelectric conversion device of the present invention comprises a first photoelectric conversion layer, a second photoelectric conversion layer and a third photoelectric conversion layer stacked in this order from a light entrance side, each photoelectric conversion layer having a p-i-n junction and formed of a silicon based semiconductor, wherein a short-circuit photocurrent of the first photoelectric conversion layer is larger than a short-circuit photocurrent of the second photoelectric conversion layer or a short-circuit photocurrent of the third photoelectric conversion layer under a condition of light source: xenon lamp, irradiance: 100 mW/cm, AM: 1.5, and temperature: 25&#xb0; C.

Stacked photoelectric conversion device

The semiconductor of the present invention has iron sulfide and a forbidden band control element contained in the iron sulfide. The forbidden band control element has a property capable of controlling the forbidden band of iron sulfide on the basis of the number density of the forbidden band control element in the iron sulfide. An n-type semiconductor is manufactured by incorporating a group 13 element of the IUPAC system into iron sulfide. Moreover, a p-type semiconductor is manufactured by incorporating a group Ia element into iron sulfide. A semiconductor junction device or a photoelectric converter is manufactured by using the n-type semiconductor and the p-type semiconductor.

Iron sulfide semiconductor doped with Mg or Zn, junction devices and photoelectric converter comprising same

A photoelectric conversion device comprising: a pin-type photoelectric conversion layer constituted of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, wherein the p-type semiconductor layer contains silicon atoms and nitrogen atoms, which is possible to improve photoelectric conversion efficiency.

Photoelectric conversion device and manufacturing method thereof

A photoelectric conversion device includes a p-type layer, an i-type layer and an n-type layer each made of a silicon base semiconductor, stacked in this order, wherein the i-type layer contains n-type impurities in a concentration of 1.0&#xd7;10to 2.0&#xd7;10cm.

A solar cell substrate has irregularities on a surface which is in contact with a photo-electric conversion layer, and light is incident on the side of the irregularities. The height of the irregularities is set so that the root mean square height is in a range of 15 nm to 600 nm, and tan &thgr; is in a range of 0.10 to 0.30, where &thgr; is the angle of incline of the surface of the irregularities with respect to an average line of the irregularities. Light incident on the irregularities is scattered at the interface. This increases the optical path length and thus the quantity of light absorbed in the photo-electric conversion layer, resulting in improved efficiency. Additionally, the photo-electric conversion layer can be made thinner reducing deposit time and manufacturing cost. Further, collision of crystals is not incurred, thus preventing deterioration of photo-electric conversion efficiency which is caused by defects.

Growing community of inventors

Osaka, Japan

Yoshiyuki Nasuno