Mitsubishi Materials Corporation

The University of Tokyo

Yoshiyuki Nagatomo

Nobuyuki Terasaki

Yoshirou Kuromitsu

Toshiyuki Nagase

Takeshi Kitahara

Shuji Nishimoto

Tomoya Oohiraki

Hiroshi Tonomura

Ryohei Yumoto

Kazuhiro Akiyama

Kazuaki Kubo

Shoichi Shimamura

Takeshi Negishi

Kimihito Nishikawa

Masahito Komasaki

Toyo Ohashi

Hiroya Ishizuka

Touyou Ohashi

Ryouhei Yumoto

Kazunari Maki

Yoshinobu Nakada

Hiroyuki Mori

Naoya Shibata

Hideyuki Miyake

Masakazu Edo

Koya Arai

Akihito Kumamoto

Toshio Sakamoto

Isao Arai

Yuichi Ikuhara

Koichi Goshi

Soutarou Ooi

Asao Tokiwa

A bonded body of the present invention includes a ceramic member formed of ceramics and a Cu member formed of Cu or a Cu alloy. In a bonding layer formed between the ceramic member and the Cu member, an area ratio of a CuP phase in a region extending by up to 50 μm toward the Cu member side from a bonding surface of the ceramic member is equal to or lower than 15%.

Bonded body, power module substrate, power module, method for manufacturing bonded body, and method for manufacturing power module substrate

Forming aluminum circuit layers forming an aluminum circuit layers on one surface of a ceramic substrate and forming copper circuit layers are included. The copper circuit layers are formed by laminating copper boards for the circuit layers on the respective aluminum circuit layers, arranging the laminate between a pair of support boards having a convex curved surface at least on one surface so as to face to each other, moving the support boards in a facing direction to press the laminate in a lamination direction, and heating in this pressing state so that the copper boards for the circuit layers are bonded on the aluminum circuit layers respectively by solid phase diffusion. In the step of forming the copper circuit layers, the support boards are arranged so that either one of the convex curved surface is in contact with the adjacent copper boards for the circuit layers in the laminate.

Method of manufacturing bonded body for insulation circuit substrate board and bonded body for insulation circuit substrate board

A method is provided for producing an insulating circuit substrate with a heat sink including an insulating circuit substrate and a heat sink, the insulating circuit substrate including a circuit layer and a metal layer that are formed on an insulating layer, and the heat sink being bonded to the metal layer side. The method includes: an aluminum bonding layer forming step of forming an aluminum bonding layer formed of aluminum or an aluminum alloy having a solidus temperature of 650&#xb0; C. or lower on the metal layer; and a heat sink bonding step of laminating a copper bonding material formed of copper or a copper alloy between the aluminum bonding layer and the heat sink and bonding the aluminum bonding layer, the copper bonding material, and the heat sink to each other by solid phase diffusion bonding.

Method for producing insulating circuit substrate with heat sink

To provide a method of manufacturing power module substrate board at high productivity and a ceramic-copper bonded body in which warps are reduced. In a bonded body-forming step, a circuit layer-forming copper layer consisting of a plurality of first copper layers is formed by arranging and bonding a plurality of first copper boards on a first surface of a ceramic board, and a metal layer-forming copper layer consisting of a second copper layer with a smaller arrangement number than that of the first copper layers is formed by bonding a second copper board having a larger planar area than that of the first copper board and a smaller thickness than that of the first copper board so as to cover at least two of adjacent substrate board-forming areas on a second surface of the ceramic board among the substrate board-forming areas partitioned by the dividing groove.

Method of manufacturing power module substrate board and ceramic-copper bonded body

A method for producing a bonded body includes: a laminating step of forming a laminated body in which a first member and a second member are temporarily bonded to each other by providing a temporary bonding material including an organic material on at least one of a bonding surface of the first member and a bonding surface of the second member; and a bonding step of pressurizing and heating the laminated body in a laminating direction and bonding the first member and the second member to each other. In the bonding step, during a temperature increase process of heating the laminated body up to a predetermined bonding temperature, at least a pressurization load Pat a decomposition temperature Tof the organic material included in the temporary bonding material is lower than a pressurization load Pat the bonding temperature.

Method for producing bonded body, method for producing insulated circuit board, and method for producing insulated circuit board with heatsink

An insulated heat transfer substrate includes a heat transfer layer formed of aluminum or an aluminum alloy, a conductive layer provided on one surface side of the heat transfer layer, and a glass layer formed between the conductive layer and the heat transfer layer, in which the conductive layer is formed of a sintered body of silver, and a thickness of the glass layer is in a range of 5 &#x3bc;m or larger and 50 &#x3bc;m or smaller.

Insulated heat transfer substrate, thermoelectric conversion module, and method for manufacturing insulated heat transfer substrate

A bonded body of the present invention includes a ceramic member formed of ceramics and a Cu member formed of Cu or a Cu alloy. In a bonding layer formed between the ceramic member and the Cu member, an area ratio of a CuP phase in a region extending by up to 50 &#x3bc;m toward the Cu member side from a bonding surface of the ceramic member is equal to or lower than 15%.

What is provided is a method of manufacturing an insulating circuit board with a heatsink including an insulating circuit board and a heatsink, the heatsink being bonded to the metal layer side of the insulating circuit board, the metal layer being formed of aluminum, and a bonding surface of the heatsink with the insulating circuit board being formed of an aluminum alloy having a solidus temperature of 650&#xb0; C. or lower. This method includes a high alloy element concentration portion forming step (S) of forming a high alloy element concentration portion and a heatsink bonding step (S) of bonding the heatsink, in which a ratio tb/ta of a thickness tb of the brazing material layer to a thickness to of the core material in the clad material is in a range of 0.1 to 0.3.

Method of manufacturing insulating circuit board with heatsink

An insulated circuit board which is obtained by bonding a circuit layer onto one side of a ceramic substrate, and bonding a metal layer made of copper or copper alloy onto the other side of the ceramic substrate; and a heat sink which is bonded to the metal layer are included; the heat sink has a first metal layer made of aluminum or aluminum alloy joined to the metal layer, a ceramic board material joined to the first metal layer at an opposite side to the metal layer, and a second metal layer made of aluminum or aluminum alloy joined to the ceramic board material at an opposite side to the first metal layer; a thickness T1 of the first metal layer and a thickness T2 of the second metal layer are 0.8 mm to 3.0 mm inclusive; and a thickness ratio T1/T2 is 1.0 or more.

Insulation circuit board with heat sink

Provided with an insulation circuit board in which a circuit layer is joined to one side of a ceramic substrate and a metal layer made of aluminum or aluminum alloy is joined to the other side of the ceramic substrate, and a heat sink joined to the metal layer; the heat sink has a first metal layer made of copper joined to the metal layer, a ceramic board material joined to the first metal layer at an opposite side to the metal layer, and a second metal layer made of copper or copper alloy joined to an opposite side of the ceramic board material to the first metal layer; and a thickness T1 of the first metal layer is 0.3 mm to 3.0 mm inclusive and equal to or more than a thickness T2 of the second metal layer.

A bonded body of the present invention includes a ceramic member formed of ceramics and a Cu member formed of Cu or a Cu alloy. In a bonded interface between the ceramic member and the Cu member, a Cu&#x2014;Sn layer which is positioned on the ceramic member side and in which Sn forms a solid solution in Cu, a first intermetallic compound layer which is positioned on the Cu member side and contains Cu and Ti, and a second intermetallic compound layer which is positioned between the first intermetallic compound layer and the Cu&#x2014;Sn layer and contains P and Ti are formed.

Bonded body, power module substrate, method for manufacturing bonded body, and method for manufacturing power module substrate

An insulated circuit board having a ceramic substrate, a circuit layer on which a circuit pattern is formed and that is bonded to one surface of the ceramic substrate, and a metal layer bonded to the other surface of the ceramic substrate. The circuit layer has a first circuit layer that is bonded to the ceramic substrate and is made of aluminum and a second circuit layer that is bonded to the upper surface of the first circuit layer and is made of copper, the metal layer has a first metal layer that is bonded to the ceramic substrate and is made of aluminum and a second metal layer that is bonded to the upper surface of the first metal layer and is made of copper, and the thicknesses of the first circuit layer and the first metal layer are each 0.2 mm or more and 0.9 mm or less.

Insulated circuit board

An Ag underlayer-attached metallic member includes a metallic member joined with a body to be joined and an Ag underlayer formed on a joining surface of the metallic member with the body to be joined, the Ag underlayer includes a glass layer formed on a metallic member side and an Ag layer laminated on the glass layer, and an area proportion of voids in an Ag layer surface of the Ag underlayer is 25% or less.

Ag underlayer-attached metallic member, Ag underlayer-attached insulating circuit substrate,semiconductor device, heat sink-attached insulating circuit substrate, and method for manufacturing Ag underlayer-attached metallic member

The present invention provides a ceramic-aluminum bonded body in which Mg-containing oxide having a spinel crystal structure are dispersed in an aluminum member within a range of 2 &#x3bc;m in a thickness direction from a bonded interface with a ceramic member, a segregated portion in which Mg, Si, and O is segregated is formed in the aluminum member in the vicinity of the bonded interface with the ceramic member, mass ratios of Mg, Si, and O between the segregated portion and a position spaced by 10 &#x3bc;m from the bonded interface toward an aluminum member side are within predetermined ranges, and the amount of Mg at the position spaced by 10 &#x3bc;m from the bonded interface toward the aluminum member side is 0.8 mass % or less.

Growing community of inventors

Saitama, Japan

Yoshiyuki Nagatomo