Nippondenso Co., Ltd.

Sumitomo Metal Ceramics Inc.

Denso Corporation

Sumitomo Metal (Smi) Electronics Devices, Inc.

Yoshiyuki Miyase

Tohru Nomura

Takeshi Matsui

Takashi Nagasaka

Akihiko Naito

Noboru Yamamoto

Naohito Kato

Motoshi Kawai

Nozomi Tanifuji

Takamasa Okumura

Koji Sawada

Masahiro Yamamoto

Masami Yamaoka

Tomoatsu Makino

Naoto Okabe

Haruo Kawakita

Ryoichi Okuda

Shinzi Shibata

Akihiko Ogino

Kohmei Kawaguchi

Shuuzi Sakou

Katsuhisa Mase

Tomoatsu Mikino

Katuhisa Mase

Kasuhiro Yamada

Koichi Suzumura

Yoshiki Ishida

Masataka Aoki

An IGBT having a buffer layer for shortening the turn-off time and for preventing the latching up is improved. The buffer layer of the present invention is not bare at the edge of a diced cross-section of the IGBT chip. According to this construction, a withstanding voltage between a semiconductor substrate and the buffer layer is lower than the withstand voltage of the pn junction at the edge of the diced cross-section. Therefore, the whole pn junction between the semiconductor substrate and the buffer layer, which has wide area, breaks down, as a result, energy caused by a negative voltage is absorbed, and the withstanding voltage against the negative voltage is improved.

Insulated gate bipolar transistor and method of fabricating the same

A method for producing a multilayer ceramic circuit substrate having therein internal conductor patterns comprising W and/or Mo as a main component and surface conductor patterns comprising Cu as a main component formed onto a surface layer of the multilayer ceramic circuit substrate, wherein an intermediate metal layer comprising 40 to 90 wt. % of W and/or Mo and 10 to 60 wt. % of at least one element selected from the group consisting of Ir, Pt, Ti, and Cr is formed in through-holes of the surface layer and on parts of the surface layer in the vicinity of the through holes on the surface layer, whereby the internal conductor patterns and the surface conductor patterns are electrically connected through the intermediate metal layer. The alumina multilayer ceramic circuit substrate enables an excellent bonding strength and electrical conductivity between the internal conductors and the surface conductors and high precision wiring and miniaturization of an electronic circuit part.

Process for producing a multilayer ceramic circuit substrate

A thick film circuit board comprising an insulating substrate; conductor wiring layers of a conductive material containing an oxide and formed on the insulating substrate by printing and firing; a resistance layer of a resistive material having a selected sheet resistance, being chemically reactive with the oxide, and formed between and bridging the conductor wiring layers by printing and firing; and a conductive barrier layer interposed between each of the conductor wiring layers and the resistance layer to prevent chemical reaction between the oxide of the conductor wiring layers and the resistive material of the resistance layer.

Thick film circuit board

A multilayer ceramic circuit substrate having therein internal conductor patterns comprising W and/or Mo as a main component and surface conductor patterns comprising Cu as a main component formed onto a surface layer of the multilayer ceramic circuit substrate, wherein an intermediate metal layer comprising 40 to 90 wt. % of W and/or Mo and 10 to 60 wt. % of at least one element selected from the group consisting of Ir, Pt, Ti, and Cr is formed in through-holes of the surface layer and on parts of the surface layer in the vicinity of the through holes on the surface layer, whereby the internal conductor patterns and the surface conductor patterns are electrically connected through the intermediate metal layer. The alumina multilayer ceramic circuit substrate provides an excellent bonding strength and electrical conductivity between the internal conductors and the surface conductors and enables high precision wiring and miniaturization of an electronic circuit part.

Multilayer ceramic circuit substrate, process for producing the same,

Method of welding metals of different kind by laser

A multilayer ceramic substrate having improved mechanical and electrical properties and suitable for use to form a hybrid integrated circuit and a process for the manufacture thereof. The multilayer ceramic substrate has at least one layer of a first conductor based on a refractory metal as an internal conductor layer and at least one layer of a Cu-based second conductor as a surface conductor layer, wherein the second conductor layer is connected to the first conductor layer through a metallic layer formed by coating with a metalloorganics paste containing one or more metals selected from the group consisting of Pt, Pd, Ni, Cu, Au, Rh, Ru, Re, Co, and Ir followed by firing in an inert or reducing atmosphere.

Multilayer ceramic substrate and manufacture thereof

Base regions of first and second stage transistors are formed in a semiconductor substrate consisting of low and high resistivity collector layers, and emitter regions are formed in the respective base regions. The emitter region of the second stage transistor has an interdigital structure with a plurality of finger portions, and an emitter surface electrode is formed on the emitter region of the second stage transistor. The second stage transistor emitter surface electrode has an extending portion at a position spaced apart from a transistor operation region where the finger portions are formed. An emitter connection electrode is formed on the extending portion, and a lead is connected by soldering or the like to the emitter connection electrode. In a portion of the emitter surface electrode extending from the emitter connection electrode to the transistor operation region, slits are formed such that they are bypassed by emitter current so that the lead resistance from each finger portion to the emitter connection electrode is substantially uniform.

Semiconductor device constituting bipolar transistor

In an ignition system for an internal combustion engine, a signal generator generates a given ac signal in synchronism with the rotation of the engine and a waveform reshaping circuit reshapes the waveform of the ac signal from the signal generator thus generating a pulse signal. An ignition timing control circuit is responsive to the pulse signal from the waveform reshaping circuit to control the timing of ignition of an ignition coil in which a primary current is switched on and off in accordance with the pulse signal.

Ignition system for internal combustion engines

In an apparatus for controlling the energization time of an ignition coil of an internal combustion engine, a desired ignition timing is computed in accordance with a load and rotation speed of the engine and an energization starting time of the ignition coil is computed in accordance with the ignition timing. The energization starting time is retarded in accordance with the primary current through the ignition coil and the energization time of the ignition coil is reduced. The primary current flow through the ignition coil is interrupted at the ignition timing.

Ignition control apparatus for internal combustion engines

Growing community of inventors

Okazaki, Japan

Yoshiyuki Miyase