Sharp Kabushiki Kaisha Corporation

Yoshiyuki Miyajima

Hirohiko Nishiki

Masahiko Suzuki

Yoshimasa Chikama

Takeshi Hara

Yoshifumi Ohta

Michiko Takei

Yoshiyuki Harumoto

Tetsuya Aita

Okifumi Nakagawa

Yuuji Mizuno

Kazuo Nakagawa

The present invention provides a thin film transistor including an oxide semiconductor layer () for electrically connecting a signal electrode () and a drain electrode (), the an oxide semiconductor layer being made from an oxide semiconductor; and a barrier layer () made from at least one selected from the group consisting of Ti, Mo, W, Nb, Ta, Cr, nitrides thereof, and alloys thereof, the barrier layer () being in touch with the signal electrode () and the oxide semiconductor layer () and separating the signal electrode () from the oxide semiconductor layer (). Because of this configuration, the thin film transistor can form and maintain an ohmic contact between the first electrode and the channel layer, thereby being a thin film transistor with good properties.

Thin film transistor, method for manufacturing same, active matrix substrate, display panel and display device

Growing community of inventors

Osaka, Japan

Yoshiyuki Miyajima