Sharp Kabushiki Kaisha Corporation

Mitsubishi Gas Chemical Company, Inc.

Other

Yoshiyuki Masuda

Noboru Ohtani

Masayoshi Koba

Hisamatsu Nakano

Ryusuke Kita

Masahiko Ishikawa

Yoshitaka Masuda

Yoshiya Kimura

Takatoshi Matsumura

Hisako Arai

Yoshiyuki Matsu

Noboru Otani

Kenji Nakanishi

Noriyuki Kato

Yasushi Ogimoto

Seiki Yano

Hironori Matsunaga

Masumi Nakamichi

Sakiko Satoh

Noboru Ootani

Kyoko Nishizaki

Disclosed is a light-transmitting electromagnetic-shielding laminate, which is characterized in that two or more layers including an electromagnetic-shielding layer are arranged in layers using a (meth)acrylate adhesive composition which contains a (meth)acrylate monomer, a (meth)acrylate oligomer and at least one member selected from the group consisting of acrylic amide derivatives, silane compounds and organophosphorus compounds. Also disclosed is a light-transmitting radio wave absorber which is characterized in that a resistive layer, a dielectric spacer and a reflective layer are arranged in layers using a (meth)acrylate adhesive composition which contains a (meth)acrylate monomer, a (meth)acrylate oligomer and at least one member selected from the group consisting of acrylic amide derivatives, silane compounds and organophosphorus compounds.

Light-transmitting electromagnetic-shielding laminate and method for producing the same, light-transmitting radio wave absorber, and adhesive composition

The present invention provides a light-transmitting electromagnetic wave-shielding material for use in displays or in-vehicle panels each having a polarizing plate or a retardation plate, wherein the light-transmitting electromagnetic wave-shielding material undergoes no generation of light interference fringes and is satisfactory in visibility even through sunglasses, goggles, glare-proof panels or glare-proof window materials having polarizing capability. By using unstretched light-transmitting organic polymer materials low in molecular orientation or small in molecular orientation unevenness as the base substrate of an electromagnetic wave-shielding layer, the light-transmitting electromagnetic wave-shielding material excellent in light interference fringe prevention capability can be obtained.

Light-transmitting electromagnetic wave-shielding material

The problem of the present invention is to offer a wave absorber that has reflection attenuation capability sufficient to enable prevention of communication disturbances due to reflection and the like of EM waves, that enables greater thinness and lighter weight, and that has wide-band attenuation properties, as well as a manufacturing method of the wave absorber. The wave absorber of the present invention has a structure which sequentially laminates a grid-like conductor layer composed of an electric conductor, a first dielectric layer, a high-resistance conductor layer having a surface resistivity within a prescribed range, a second dielectric layer, and a pattern layer having multiple patterns composed of an electric conductor, wherein each pattern in said pattern layer differs in either or both of size and form relative to another adjacent pattern.

Wave absorber and manufacturing method of wave absorber

A wave absorber of the present invention includes a sequentially laminated structure including an conductor layer () made of a conductive material; a first dielectric layer (polycarbonate substrate () and bismaleimide-triazine substrate ()) made of one layer or a multilayer of a dielectric material; and a patterned layer () including a plurality of a pattern made of the conductive material, wherein the conductor layer, the first dielectric layer, and the patterned layer are laminated sequentially, and each pattern in the patterned layer () is different from other adjacent patterns with respect to at least one of size and shape. Therefore, the wave absorber has sufficient reflection-attenuating capability to prevent communication failure caused by a reflection of a radio wave and so on, can be thin-sized and reduced in weight, and has a wide-band attenuation property.

Wave absorber

An inverted-F-shaped antenna pattern is formed as a driven element on the obverse-side surface of a glass-epoxy circuit board. This antenna pattern has a feeding conductor pattern connected to a feeding transmission path formed on the obverse-side surface of the circuit board and a grounding conductor pattern connected to a grounding conductor portion formed on the obverse-side surface of the circuit board. Moreover, an inverted-L-shaped antenna pattern is formed as a passive element on the reverse-side surface of the circuit board. This antenna pattern has a grounding conductor pattern connected to a grounding conductor portion formed on the reverse-side surface of the circuit board. Forming the inverted-F-shaped antenna pattern and the inverted-L-shaped antenna pattern so as to overlap each other yields a laminate pattern antenna that is usable in a wide frequency range.

Laminate pattern antenna and wireless communication device equipped therewith

An inverted-F-shaped antenna pattern is formed as a driven element on a surface of a glass-epoxy circuit board . This antenna pattern has a feeding conductor pattern connected to a feeding transmission path formed on the surface of the circuit board and a grounding conductor pattern connected to a grounding conductor portion formed on the surface of the circuit board . The feeding conductor pattern is formed so as to have a tapered shape so that its width increases gradually from where it is connected to the feeding transmission path toward an elongate pattern of the antenna pattern

Pattern antenna and wireless communication device equipped therewith

An impedance matching device includes a variable capacitor constituted by a non-linear dielectric thin film and an upper electrode disposed on a lower electrode formed on a substrate. The non-linear dielectric thin film is formed by a deposition, screen-printing, electroplating, or other technique, and changes its relative dielectric constant according to applied voltage. Therefore, the capacity of the variable capacitor is controlled and the impedance is matched, by simply controlling the applied voltage across the non-linear dielectric thin film. Consequently, the arrangement makes it possible to cut down the impedance matching device in size and cost, compared to an arrangement incorporating a capacitor and a coil for adjustment, effects a much simpler matching operation, and facilitates a manufacturing process.

Impedance matching device

The present invention provides a dielectric thin film capacitor element in which leak current may be suppressed from increasing over time while energizing at high temperature and which has excellent insulating quality and reliability and a manufacturing method thereof. The dielectric thin film capacitor element is constructed by forming a lower electrode, a dielectric thin film and an upper electrode one after another on a substrate, wherein the dielectric thin film capacitor element is characterized in that the dielectric thin film is made of an oxide material composed of at least titanium and strontium and containing erbium.

Dielectric thin film capacitor element

A method for preparing an oxide dielectric thin film, for use in a dielectric thin film device, is described. Briefly, a film forming chamber is heated, and a thin film of dielectric, about 200 nm thick, is formed by sputtering or another deposition method. After the film is formed, evacuation of the film forming chamber is suspended, and oxygen gas is introduced into the chamber. The film is oxidized after its formation by maintaining the film in the oxygen atmosphere for a period of time, which can include cooling steps. The resulting dielectric thin film has excellent dielectric properties, such as a high dielectric constant and great dielectric strength.

Method of producing dielectric thin film element

In a method for manufacturing a thin film of metal-oxide dielectric, a precursor solution in a sol state is synthesized in a first step. This precursor solution is composed of component elements of materials of the composite metal-oxide dielectric to be manufactured. In a second step, this precursor solution is made a thin film by spin coating. In a third step, this thin film in the sol state is dried to convert it into a thin film of dry gel. Thereafter, in a fourth step, the thin film of dry gel is subjected to a heat treatment for thermally decomposing and removing organic substances in the dry gel thin film and simultaneously crystallizing this gel state thin film.

Method for manufacturing thin film of composite metal-oxide dielectric

A dielectric thin film device is constructed by a dielectric thin film using lead erbium zirconate titanate represented by (Pb.sub.1-y Er.sub.y) (Zr.sub.x Ti.sub.1-x)O.sub.3 with 0&lt;x&lt;1 and 0&lt;y&lt;1. This dielectric thin film element has excellent electric characteristics of a leak electric current and fatigue characteristics, etc. The dielectric thin film element may have a thermally grown silicon dioxide film, a titanium film, a platinum lower electrode, a film of lead erbium zirconate titanate represented by (Pb.sub.1-y Er.sub.y) (Zr.sub.x Ti.sub.1-x)O.sub.3 and a platinum upper electrode. These films and electrodes are sequentially formed on an n-type silicon substrate. In this case, 0.45.ltoreq.x.ltoreq.0.75 and 0.05.ltoreq.y.ltoreq.0.1 are set. A method for manufacturing a dielectric thin film has the steps of coating a substrate with a precursor solution of erbium lead zirconate titanate represented by (Pb.sub.1-y Er.sub.y) (Zr.sub.x Ti.sub.1-x)O.sub.3 drying the coated solution at a high temperature to obtain a dry gel; and thermally treating the dry gel at a higher temperature to produce the dielectric thin film is constructed of the lead erbium zirconate titanate represented by (Pb.sub.1-y Er.sub.y) (Zr.sub.x Ti.sub.1-x)O.sub.3 with 0.45.ltoreq.x.ltoreq.0.8 and 0.005.ltoreq.y.ltoreq.0.1.

Dielectric thin film device with lead erbium zirconate titanate

The present invention provides a substrate providing a ferroelectric crystal thin film which includes an electrode formed on a semiconductor single crystal substrate and a ferroelectric crystal thin film of Bi.sub.4 Ti.sub.3 O.sub.12 formed on the electrode through the intermediary of a buffer layer.

Growing community of inventors

Tokyo, Japan

Yoshiyuki Masuda