Sanyo Electric Co., Ltd.

Yoshiyuki Kobayashi

Noriaki Sakamoto

Kouji Takahashi

Eiju Maehara

Junji Sakamoto

Yusuke Igarashi

Yukio Okada

Katsumi Okawa

Shigeaki Mashimo

Takeshi Nakamura

Hisashi Shimizu

Noriyasu Sakai

Hirokazu Fukuda

Hiroki Etou

Kazuhisa Kusano

Hitoshi Takagishi

Susumu Ota

Kouji Seki

Chikara Kaneta

Yoshihiko Yanase

A semiconductor module according to the invention includes: an island formed of a conductive material; a plurality of leads disposed in vicinity of the island; a resin sealing body which is mounted on the island and disposed such that a back surface of a circuit board on which semiconductor elements is exposed upward; a sensor which is mounted on the back surface of the circuit board; and a thin metallic wire which electrically connects the circuit board with the leads. The island, the resin sealing body, the sensor, and parts of the leads are sealed by a second sealing resin.

Semiconductor module and method of manufacturing the same

A semiconductor device is provided wherein conductive paths, formed of crystal that grows better along the X-Y axis than along the Z axis, are embedded in an insulating resin, and the back surface of the conductive pathis exposed through the insulating resinand sealed. With this arrangement, fractures of the conductive pathsembedded in the insulating resinare suppressed.

Semiconductor device and semiconductor module

In the present invention there is formed a sheet-like board memberhaving conductive coating films, such as first padsand die pads, formed thereon or a sheet-like board memberwhich has been half-etched by using conductive coating films such as first padsand die pads. A hybrid IC can be manufactured by means of utilization of post-processing processes of a semiconductor manufacturer. Further, a hybrid IC can be manufactured without adoption of a support board, and hence there can be manufactured a hybrid IC which is of lower profile and has superior heat dissipation characteristics.

Sheet-like board member and method of manufacturing a semiconductor device

A protection circuit device using a MOSFET has a plural of conductive paths separated electrically, a MOSFET chip integrating two power MOSFETs in one chip where a gate electrode and a source electrode are fixed on the desired conductive path, conductive material provided on a common drain electrode of the MOSFET, and insulating resin covering said MOSFET and supporting said conductive path in one body. Removing a drawing-around of the common drain electrode and fixing the source electrode directly on the conductive path, low ON-state resistance is realized.

Protection circuit device using MOSFETs and a method of manufacturing the same

Hybrid integrated circuit device

A method for fabricating a circuit device includes preparing a laminating sheet comprising a conductive film, insulation resin formed on the surface of the conductive film, and a first conductive path layer formed on the surface of the insulation resin. Semiconductor elements are adhered and fixed on the first conductive path layer. A sealing resin is provided as an overcoat to the first conductive path layer and the semiconductor elements. The method includes forming a second conductive path layer by etching the conductive film into a predetermined pattern and forming an external electrode at predetermined points of the second conductive path layer.

Method for fabricating a circuit device

A method of manufacturing a semiconductor device is described. A board that includes a flat back face, corresponding to a resin sealing area, and a front face that has projections is provided. The projections are formed of a metal that is integral with the board and include (a) a bonding pad provided in an area surrounded by an area that contacts an upper die, (b) a wiring that is integrated with the bonding pad and which extends to a semiconductor element mounting area, and (c) an electrode provided in one body with the wiring. A semiconductor element is mounted on the semiconductor element area and electrically connected to the bonding pad. The board is placed on a lower die and resin is filled into a space formed by the board and upper die. The board is divided into multiple devices such that the projections are separated by removing the board exposed at the back face of the resin.

Board for manufacturing a BGA and method of manufacturing semiconductor device using thereof

After a trenchis formed in a conductive foil, the circuit elements are mounted, and the insulating resin is applied on the conductive foilas the support substrate. After being inverted, the conductive foilis polished on the insulating resinas the support substrate for separation into the conductive paths. Accordingly, it is possible to fabricate the circuit device in which the conductive pathsand the circuit elementsare supported by the insulating resin, without the use of the support substrate. And the interconnects Lto Lrequisite for the circuit are formed, and can be prevented from slipping because of the curved structureand a visor

Circuit device and manufacturing method of circuit device

After a trenchis formed in a conductive foil, the circuit elements are mounted, and the insulating resin is applied on the conductive foilas the support substrate. After being inverted, the conductive foilis polished on the insulating resinas the support substrate for separation into the conductive paths. Accordingly, it is possible to fabricate the circuit device in which the conductive pathsand the circuit elementsare supported by the insulating resinwithout the use of the support substrate. And the interconnects Lto Lrequisite for the circuit are formed, and can be prevented from slipping because of the curved structureand a visor

Circuit device and manufacturing method of circuit device and semiconductor module

The semiconductor elements for the small signal type circuits and the Au wire for connection are integrated as one package to produce the semiconductor devicesA,A,A,A and. In this way, the wire bonding of Au can be omitted, and the wire bonding of the small diameter Al wire and the large diameter Al wire is only required to complete the connection of the fine metal wire. These semiconductor devices have a plurality of circuit elements as one package, so that the mounting operation on the mounting board can be significantly reduced.

Wire bonding is performed efficiently by pressing circumference end of a block of a conductive foil by a clamper, and by performing wire bonding of a circuit element of a mounting portion in the block and the conductive pattern in a lump. At a time of wire bonding, oxidation of the conductive foil is prevented by blowing nitrogen gas to the conductive foil from paths and provided at the clamper.

Method of manufacturing circuit device

A device containing a flat member is provided, having a pattern for a bonding pad, a wiring, and an electrode, by half-etching through the flat member.

A heat radiation electrode () is exposed from the back surface of an insulating resin (), and a metal plate () is affixed to this heat radiation electrode (). The back surface of this metal plate () and the back surface of a first supporting member () are substantially within a same plane, so that it is readily affixed to a second supporting member (). Accordingly, the heat generated by the semiconductor chip can be efficiently dissipated via the heat radiation electrode (), the metal plate () and the second supporting member ().

Semiconductor device, semiconductor module and hard disk

AS conductive patternsA toD are formed burying in a insulating resinand a conductive foilis formed being half-etched, thickness of the device is made thin. As an electrode for radiationD is provided, a semiconductor device superior in radiation is provided.

Semiconductor device with under-fill material below a surface of a semiconductor chip

In a step of covering a rear face resist, by recognizing position of a positioning mark exposed at a rear face of a conductive foil, position recognition of a conductive pattern of the rear face of every block or every conductive foil is performed indirectly, and a resist layer is formed except an opening portion forming the scheduled rear face electrode on the conductive pattern. Therefore, a method of manufacturing a circuit device shortened in time.

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Gunma, Japan

Yoshiyuki Kobayashi