Tokyo Electron Limited

Alps Electric Co., Ltd.

Asm IP Holding B.v.

Central Glass Company, Limited

Alps Alpine Co., Ltd.

Toyo Soda Manufacturing Co., Ltd.

Sagami Chemical Research Center

Yoshiyuki Kikuchi

Shoji Suzuki

Takashi Sasaki

Akihiro Ishii

Toshiki Nakamura

Kiyohide Matsui

Tamejiro Hiyama

Heishiro Fudo

Yuzuru Kawana

Etsuko Tobita

Kenji Watanabe

Toru Seita

Daisuke Takai

Yukimitsu Yamada

Kiyoshi Kondo

Akihisa Itoh

Yoshio Susa

Yasunobu Nishimura

Kazuhito Ohshita

Hiroyuki Watanabe

Hirotsugu Sugiura

Kouichi Miura

Akira Akimoto

Takaaki Matsuoka

Hiroshi Shigetaka

Kiyosi Kondo

Akiyoshi Mitsumori

Tsuyoshi Ogura

Yuzuru Morino

Shinji Ide

Harumi Takase

Akira Yanai

Ryo Miyama

Hirotsune Kondoh

Akihisa Ito

Methods and systems for forming a structure including multiple carbon layers and structures formed using the methods or systems are disclosed. Exemplary methods include forming a first carbon layer with an initial first flowability and a second carbon layer with an initial second flowability, wherein first flowability is less than second flowability.

Method of filling gap with flowable carbon layer

A method of forming a carbon-containing layer on a surface of a substrate is disclosed. The method can include providing a substrate within a reaction chamber of a reactor, heating a carbon precursor to produce a vaporized gas comprising carbon-containing molecules, providing the vaporized gas to the reaction chamber, and polymerizing the carbon-containing molecules to form the carbon-containing layer on the surface of a substrate. The carbon compound can include 10 or more carbon atoms. Exemplary methods provide carbon-containing layer with desired density and transparency.

Method of forming a carbon-containing layer and structure including the layer

Methods and systems for forming a forming a nitrogen-containing carbon film and structures formed using the methods or systems are disclosed. Exemplary methods include providing a precursor with carbon-terminated carbon-nitrogen bonds. The methods can further include providing a reactant to the reaction chamber.

Method of forming a nitrogen-containing carbon film and system for performing the method

A door handle includes a door handle case and an electrostatic sensor provided in the door handle case. The electrostatic sensor includes a detection electrode that is formed of a flat conductor plate, or that is formed on a surface of a flat substrate or within a flat substrate. The detection electrode includes a middle portion in a longitudinal direction of the detection electrode and includes peripheral portions proximal to both end portions of the detection electrode in the longitudinal direction. For a width of the detection electrode in a direction perpendicular to the longitudinal direction, each peripheral portion is wider than the middle portion, and the width of the detection electrode gradually increases toward each end portion in the longitudinal direction.

Door handle

An operation detection device includes an electrostatic sensor accommodated inside a casing and including a first conductor and a second conductor, and a controller electrically connected to the first conductor and the second conductor, and applies a voltage to each of the first conductor and the second conductor, to measure an electrostatic capacitance of each of the first conductor and the second conductor. The first conductor is arranged in and the second conductor is not arranged in a detection region in which an operating body is detected by the electrostatic sensor. The first conductor and the second conductor are arranged in a non-detection region in which the operating body is not detected.

Operation detection device and door handle

Methods and systems for forming a structure including multiple carbon layers and structures formed using the method or system are disclosed. Exemplary methods include forming a first carbon layer and a second carbon layer, wherein a density and/or other property of the first carbon layer differs from the corresponding property of the second carbon layer.

Structures including multiple carbon layers and methods of forming and using same

A door handle includes door handle case, a first detection electrode and a second detection electrode disposed in the door handle case, and a controller connected to the first detection electrode and the second detection electrode. The controller separately measures a first capacitance between the first detection electrode and an operation body and a second capacitance between the second detection electrode and the operation body, and the controller determines whether a locking operation is performed by the operation body based on one or both of the first capacitance and the second capacitance.

A plasma processing apparatus includes a partition plate, an antenna, and a high frequency power supply. The partition plate has a plurality of holes and partitions an inside of the processing container into a plasma generation chamber and a processing chamber. The antenna generates plasma of the plasma excitation gas supplied into the plasma generation chamber. The high frequency power supply generates plasma of a precoating gas supplied into the plasma generation chamber and introduced into the processing chamber through the plurality of holes of the partition plate. The plasma processing apparatus performs a precoating on a surface of a partition plate on a side of the processing chamber by causing the high frequency power supply to generate plasma of the precoating gas before a plasma processing using the plasma of the plasma excitation gas is performed.

Plasma processing apparatus and precoating method

A method of forming metal carbide barrier layers for fluorocarbon films in semiconductor devices is described. The method includes depositing a fluorocarbon film on a substrate and depositing a metal-containing layer on the fluorocarbon film at a first temperature, where the metal-containing layer reacts with the fluorocarbon film to form a metal fluoride layer at an interface between the metal-containing layer and the fluorocarbon film. The method further includes heat-treating the metal-containing layer at a second temperature that is greater than the first temperature, wherein the heat-treating the metal-containing layer removes fluorine from the metal fluoride layer by diffusion through the metal-containing layer and forms a metal carbide barrier layer at the interface between the metal-containing layer and the fluorocarbon film, and wherein the metal-containing layer survives the heat-treating at the second temperature without blistering or pealing.

Method of forming metal carbide barrier layers for fluorocarbon films

Embodiments of the invention describe methods for forming fluorocarbon (CF) films for semiconductor devices. According to one embodiment, the method includes providing a substrate, depositing a CF film on the substrate, generating, in the absence of a plasma, a treatment gas containing a gaseous specie having a molecular dipole, and treating the CF film with the treatment gas containing the gaseous specie having the molecular dipole to reduce the number of dangling bonds in the CF film. According to some embodiments, the method further includes depositing a second CF film on the treated CF film. According to some embodiments, the CF films may be deposited using a microwave plasma source containing a radial line slot antenna (RLSA).

Method for controlling dangling bonds in fluorocarbon films

A method of forming an amorphous carbon layer on an insulating layer includes the step of forming an amorphous carbon layer using a plasma reaction process. The amorphous carbon layer is formed in an atmosphere containing a plasma excitation gas, a CHseries gas, a silicon-containing gas, and an oxygen-containing gas.

Adhesiveness of fluorocarbon (CFX) film by doping of amorphous carbon

The present invention relates to a manufacturing method for a semiconductor device, the method includes a process for forming an interlayer film on a substrate, a process for forming an opening in the interlayer, a process for forming a conductive layer which fills the opening, and a process for forming a cap film on the surface of the conductive layer. In the process for forming the cap film, a reduction process for the surface of the conductive layer and the forming of the film are performed simultaneously.

Semiconductor device and manufacturing method therefor

The present invention relates to a semiconductor device. The semiconductor device includes a fluorocarbon film formed on a substrate and a film containing metal formed on the fluorocarbon film, wherein the content amount of fluorine atom on the fluorocarbon film, which contacts the film containing metal, is in a predetermined range.

A method for manufacturing semiconductor devices includes the steps of; forming an insulating film comprising a fluorine added carbon film on a substrate; forming a first barrier layer comprising a silicon nitride film on the insulating film by exposing a surface of the substrate formed with the insulating film to a plasma containing each active specie of a silicon and a nitride; forming a second barrier layer comprising a film containing silicon, carbon, and nitride on the first barrier layer by exposing a surface of the substrate formed with the first barrier layer to a plasma containing each active specie of the silicon and a carbon; and forming a film containing silicon and oxygen on the second barrier layer by exposing a surface of the substrate formed with the second barrier layer to a plasma containing each active specie of the silicon and an oxygen.

Manufacturing method for semiconductor devices with enhanced adhesivity and barrier properties

A pad type input device is provided. The pad type input device includes an operation surface which includes a scroll area operated by an operation body. A detector is operative to detect a touch position of the operation body placed on the operation surface as positional information on a coordinate plane. A data processor is operative to acquire an operation signal obtained by the detector to perform a predetermined process. The data processor outputs a scroll signal that moves display contents in a predetermined scroll direction when the operation body placed on the scroll area is in a stop state where the operation body does not move, even after a predetermined time elapses.

Growing community of inventors

Tokyo, Japan

Yoshiyuki Kikuchi