Sony Corporation

Success International Corporation

Hightec Systems Corporation

Yoshiyuki Kawana

Takeshi Matsushita

Hisao Hayashi

Akio Machida

Hisayoshi Yamoto

Takahiro Kamei

Teruaki Aoki

Naoki Sano

The present invention provides a method of manufacturing a semiconductor device in which a thinned substrate of a semiconductor or semiconductor device is handled without cracks in the substrate and treated with heat to improve a contact between semiconductor back surface and metal in a high yield and a semiconductor device may be manufactured in a high yield. In the method of manufacturing a semiconductor device according to the present invention, a notched part is formed from a surface to a middle in a semiconductor substrate by dicing and the surface of the substrate is fixed to a support base. Next, a back surface of the substrate is ground to thin the semiconductor substrate and then a metal electrode and a carbon film that is a heat receiving layer are sequentially formed on the back surface of the substrate. Next, the carbon film is irradiated with light at a power density of 1 kW/cmto 1 MW/cmfor a short time of 0.01 ms to 10 ms to transfer heat from the carbon film and alloy an interface between a semiconductor and the metal electrode. Subsequently, the semiconductor substrate is separated at the notched part into pieces.

Method of manufacturing semiconductor device

A solution containing impurity ions is applied onto the surface of a silicon film to form a solution layer, followed by drying into a compound layer containing the impurities. Heat treatment is performed by irradiation with an energy beam so as to diffuse the impurity atoms in the compound layer toward the silicon film into a source region and a drain region. Subsequently, the compound layer is removed.

Method for doping impurities, and for producing a semiconductor device and applied electronic apparatus using a solution containing impurity ions

A polycrystalline layer is formed as a passivation layer on a monocrystalline semiconductor substrate, the polycrystalline layer containing oxygen in the range between 2 to 45 atomic percent. The density of surface states between the surface of said substrate and the polycrystalline silicon layer is less than 10.sup.10 /cm.sup.2 .multidot.eV at the middle portion of a forbidden band, and the interface density of fixed charge in the polycrystalline layer is less than 10.sup.10 /cm.sup.2.

Semiconductor device having oxygen doped polycrystalline passivation

A semiconductor integrated circuit, in which an isolation region with one conductivity type and a plurality of island regions with another conductivity type separated by the isolation region are provided, is disclosed. In this case, a high resistance polycrystalline semiconductor layer is formed to cover whole of a surface portion of a PN-junction formed between the isolation region and the island regions.

Semiconductor integrated circuit

A semiconductor device is provided having at least two semiconductor regions of opposite conductivity type and forming a planar-type PN junction. A field limiting ring is disposed spaced from the PN junction. A high-resistivity polycrystalline silicon layer covers the PN junction and the field limiting ring.

Growing community of inventors

Atsugi, Japan

Yoshiyuki Kawana