Kyocera Corporation

Yoshiyuki Kawaguchi

Katsuaki Masaki

Masanobu Kitada

Shiro Miyazaki

Masahiko Goto

Motokazu Ogawa

Hiroshi Hayashi

Kazuhiro Nishizono

The oscillating element includes a crystal blank, a pair of excitation electrodes, and a pair of pad portions. The crystal blank includes a pair of major surfaces, at least partially configured by crystal planes, and side surfaces which connect outer edges of the pair of major surfaces. Further, it includes a mesa portion and an outer peripheral portion which surrounds the mesa portion and has a thickness between the pair of major surfaces thinner than that of the mesa portion. The excitation electrodes are individually located on the pair of major surfaces. The pair of pad portions are located on one of the pairs of major surfaces and are electrically connected with the excitation electrodes. At least a portion of an edge part which is in contact with a crystal plane includes a projecting portion, which does not exceed the height of the mesa portion from the outer peripheral portion.

Crystal oscillating element, crystal oscillation device, and method of manufacturing crystal oscillating element

A composite substrate which includes a silicon layer having less lattice defects is provided. A composite substrate includes an insulating substrate and a functional layer of which one main surface is bonded to an upper surface of the substrate. A dopant concentration of the functional layer decreases from the other main surface toward the substrate side in a thickness direction of the functional layer.

Composite substrate and method of manufacturing the same

A light emitting element includes an optical semiconductor layer () obtained by sequentially laminating a first semiconductor layer (), a light emitting layer (), and a second semiconductor layer (); a first electrode layer () that is electrically connected to the first semiconductor layer (); and a second electrode layer () that is electrically connected to the second semiconductor layer (). The second electrode layer () includes a conductive reflecting layer () positioned on the second semiconductor layer (), and a conductive layer () having a plurality of through holes () that are positioned on the conductive reflecting layer () and penetrate therethrough in a thickness direction thereof.

Light emitting element and method for manufacturing light emitting element

Growing community of inventors

Soraku-gun, Japan

Yoshiyuki Kawaguchi