Ulvac, Inc.

Yoshiyuki Kadokura

Koji Suzuki

Satoru Toyoda

Junichi Hamaguchi

Shuji Kodaira

Tetsuji Kiyota

Akifumi Sano

Yuta Sakamoto

Yukinobu Numata

Koukichi Kamada

Hisaharu Obinata

Joji Hiroishi

A method of manufacturing a semiconductor device includes a groove portion formation process of forming a groove portion in a base body, a bather layer formation process of forming a barrier layer covering at least the inner wall surface of the groove portion, a seed layer formation process of forming a seed layer covering the barrier layer, and a seed layer melting process of causing the seed layer to be melted using the reflow method. The seed layer is made of Cu.

Method of manufacturing semiconductor device

A sputtering apparatus in which the distance between a target and a substrate is made to be at least greater than the diameter of the circular substrate wafer and an internal gas pressure level of a vacuum chamber is held to be not higher than 1&times;10,Pa during sputtering process, thereby capable of effectively filling pores provided on the substrate without generating dust and void spaces.

Sputtering apparatus for filling pores of a circular substrate

Growing community of inventors

Susono, Japan

Yoshiyuki Kadokura