Sharp Kabushiki Kaisha Corporation

Yoshiyuki Itoh

Hiroshi Kanishi

Masayuki Tamaishi

Yasuyoshi Kaise

Hiroshi Matsukizono

Mutsumi Nakajima

Hiroki Taniyama

Masashi Maekawa

Yoshimizu Moriya

Makoto Kita

Norihisa Asano

Disclosed is a semiconductor device which includes a substrate, a thin film transistorhaving a first semiconductor layerA that is supported by the substrate, a thin film diodehaving a second semiconductor layerB that is supported by the substrate, and a metal layerthat is formed between the substrateand the second semiconductor layerB. The first semiconductor layerA is a laterally grown crystalline semiconductor film, and the second semiconductor layerB is a crystalline semiconductor film that contains fine crystal grains. The average surface roughness of the second semiconductor layerB is higher than the average surface roughness of the first semiconductor layerA. Consequently, the optical sensitivity of the TFD is improved and the reliability of the TFT is improved, as compared with those in the conventional semiconductor devices.

Selective recrystallization of semiconductor

In an active-matrix substrate () according to the present invention, a semiconductor layer () has a first gettering region () adjacent to the source region () of a first thin-film transistor (), a second gettering region () adjacent to the drain region () of a second thin-film transistor (), and a third gettering region () adjacent to any of the source and drain regions located between the respective channel regions (and) of the first and second thin-film transistors (and) among the source and drain regions of the thin-film transistors included in the thin-film transistor element ().

Active matrix substrate

After profiles of two chips are recognized on intermediate stages and their positions are corrected, collets are used as electrodes and a voltage is applied to the chips on bonding stage on which the chips are bonded onto a submount. Then, the respective two chips are allowed to emit light, final position correction is performed on the basis of the light-emission point data and bonding is performed. The two chips can be bonded at narrow pitches by tilting the collets with respect to chip surfaces. Consequently, two laser chips can be bonded at narrow pitches on one submount in high position accuracy.

Method and apparatus for fabricating semiconductor laser device

Method for fabricating semiconductor laser device by aligning semiconductor laser chips based on light emission measurements

Growing community of inventors

Osaka, Japan

Yoshiyuki Itoh