National Institute of Advanced Industrial Science and Technology

Yoshiyuki Inaguma

Hiroshi Takashima

Mitsuru Itoh

Noboru Miura

Kazushige Ueda

There are provided a perovskite oxide thin film EL element in which a hole transport layer/a light-emitting layer/an electron transport layer comprising a perovskite oxide thin film are formed on a lower electrode, and an upper electrode is formed thereon, and a perovskite oxide thin film EL element that provides red light emission in the vicinity of a wavelength of 610 nm, which is the basis of display making. A perovskite oxide thin film EL element comprising a lower electrodecomprising a polished single crystal substrate, an electron transport layercomprising a perovskite oxide thin film, which is a dielectric, formed on the lower electrode, a light-emitting layercomprising a perovskite oxide thin film formed on the electron transport layer, a hole transport layercomprising a perovskite oxide thin film, which is a dielectric, formed on the light-emitting layer, a buffer layerformed on the hole transport layer, and a transparent upper electrodeformed on the buffer layer

Growing community of inventors

Tsukuba, Japan

Yoshiyuki Inaguma