Nippondenso Co., Ltd.

Denso Corporation

Nippon Soken, Inc.

Toyota Jidosha Kabushiki Kaisha

Toyota Jidosha Kogyo Kabushiki Kaisha

Jidosha Kabushiki Kaisha

Yoshiyuki Hattori

Toshihiro Takei

Kazuma Matsui

Kiyohiko Watanabe

Toshiaki Nakamura

Yuzo Imoto

Makoto Kuwahara

Shunsaku Ohnishi

Hiroji Kinbara

Kyoko Okada

Hitoshi Yamaguchi

Tetsuya Takafuji

Yoshihisa Nomura

Shoichi Yamauchi

Shigeki Takahashi

Shoji Mizuno

Nozomu Akagi

Takashi Nakano

Hideo Wakata

Tetsuo Fujii

Mitsuo Inagaki

Akira Kuno

Hideyuki Hayakawa

Mikimasa Suzuki

Ken Nomura

Takahiro Goshima

Kenji Takeda

Takaaki Aoki

Yuichi Imani

Haruhiko Uno

Tsuyoshi Yamamoto

Masahiro Taguchi

Masakiyo Sumitomo

Tomoatsu Makino

Jun Sakakibara

Yasunobu Jufuku

Masaaki Takizawa

Yasushi Higuchi

Takashi Kojima

Rie Taguchi

Masaru Tamura

Hirotaka Saikaku

Nobuaki Ishihara

Koji Okazaki

Mikio Suzuki

Shinji Ichikawa

Toshiaki Watanabe

Motomi Iyoda

Hiroyuki Takahashi

Toru Nakamura

Nobuyasu Nakanishi

Taro Tanaka

Hideaki Sasaya

Shinichi Kiribayashi

Yujiro Miyata

Shigeru Takagi

Hiromi Otsuki

Toshiharu Naito

Yutaka Kawashima

Ryotaro Kachu

Takeshi Matsuda

Tetsuya Nagata

Yoshifumi Ina

Masahiko Kamiya

Takao Kasagi

Kazunari Yamamoto

Kozi Takagi

Hidenobu Kazita

Kaoru Torii

Hitoshi Tanaka

Masaya Ishida

Kosuke Kaji

Kyoko Nakashima

Tetuya Izumi

Katsuya Nomura

Shunaku Ohnishi

Syunsaku Ohnishi

Koji Nakane

Yuuichi Imani

Taiki Kato

If the capacitance of a snubber capacitor, the inductance of a coil and the magnitude of a resistor are specified such that the resonance frequency of the snubber circuit coincides with the ringing frequency of the transistor, and the impedance of the first loop at the resonance frequency becomes smaller than the impedance of the second loop at the resonance frequency, a current component due to ringing flows in the snubber circuit, and energy is consumed by the resistor. Therefore, it is possible to quickly converge ringing.

Electric power conversion device with snubber circuit

A vehicle includes a power receiving portion that contactlessly receives electric power from a power transmitting portion provided outside the vehicle and includes a shield member that is arranged around the power receiving portion in the same plane as a plane in which the power receiving portion is arranged, wherein the shield member includes a first shield region having a high shielding function and a second shield region having a shielding function lower than that of the first shield region at a position around the power receiving portion.

Vehicle with shielded power receiving coil

A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.

Semiconductor device having switching element and free wheel diode and method for controlling the same

A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.

Driving circuit for driving transistor based on control current

Driving circuit with variable resistor for transistor

A semiconductor apparatus comprises: a semiconductor substrate; and a lateral type MIS transistor disposed on a surface part of the semiconductor substrate. The lateral type MIS transistor includes: a line coupled with a gate of the lateral type MIS transistor; a polycrystalline silicon resistor that is provided in the line, and that has a conductivity type opposite to a drain of the lateral type MIS transistor; and an insulating layer through which a drain voltage of the lateral type MIS transistor is applied to the polycrystalline silicon resistor.

Semiconductor apparatus having lateral type MIS transistor

A semiconductor device includes: a semiconductor substrate; a lateral MOS transistor disposed in the substrate; a Zener diode disposed in the substrate; and a capacitor disposed in the substrate. The transistor includes a drain and a gate, and the diode and the capacitor are coupled in series between the drain and the gate. This device has minimized dimensions and high switching speed. Further, both of a switching loss and a surge voltage are improved.

Semiconductor device having lateral MOS transistor and zener diode

A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.

Switching circuit and driving circuit for transistor

A semiconductor device includes: two main electrodes; multiple first regions; and multiple second regions. The first region having a first impurity concentration and a first width and the second region having a second impurity concentration and a second width are alternately repeated. A product of the first impurity concentration and the first width is equal to a product of the second impurity concentration and the second width. The first width is equal to or smaller than 4.5 &#x3bc;m. The first impurity concentration is lower than a predetermined concentration satisfying a RESURF condition. A ratio between on-state resistances of the device at 27&#xb0; C. and at 150&#xb0; C. is smaller than 1.8.

Semiconductor device having super junction structure

A semiconductor device having SJ structure has a peripheral region having a higher withstand voltage than the withstand voltage of the cell region. A semiconductor upper layer including second conductivity-type impurities and a semiconductor lower layer including first conductivity-type impurities whose concentration is lower than the first portion region constituting the combination of the cell region are formed in the semiconductor layer of the peripheral region. A field oxide layer is formed on a surface of the semiconductor upper layer.

Method of manufacturing semiconductor device

A super junction type semiconductor device includes a first semiconductor layer of a first conductivity type, a super junction structure, and a second semiconductor layer of a second conductivity type. The thickness of the second semiconductor layer varies such that the thickness in the peripheral region is greater than that in the active region, which is used as a body region. Therefore, a depletion layer in the peripheral region expands sufficiently in the thickened portion of the second semiconductor layer as well as in the super junction structure. Thus, the avalanche withstanding capability is improved.

Semiconductor device and method of manufacturing the same

A semiconductor device includes a body region, a drift region having a first part and a second part, and a trench gate electrode. The body region is disposed on the drift region. The first and second parts extend in an extending direction so that the second part is adjacent to the first part. The trench gate electrode penetrates the body region and reaches the drift region so that the trench gate electrode faces the body region and the drift region through an insulation layer. The trench gate electrode extends in a direction crossing with the extending direction of the first and second parts. The first part includes a portion near the trench gate electrode, which has an impurity concentration equal to or lower than that of the body region.

Method for manufacturing semiconductor device having super junction construction

A collision object discrimination apparatus for vehicles includes two collision detection sensors for discriminating kinds of a collision object based on two sensor outputs. The collision object is determined based on a collision width (W) detected by a collision width detection sensor fitted to a vehicle body. Alternatively, the collision object is determined based on a difference between operation characteristics of the two sensors. Further alternatively, the two sensors are integrated into a single unit including a plurality of censor cells.

Collision object discrimination apparatus for vehicles

Growing community of inventors

Toyoake, Japan

Yoshiyuki Hattori