Renesas Electronics Corporation

Hitachi, Ltd.

Renesas Technology Corp.

Other

Yoshiyasu Tashiro

Kumiko Takikawa

Satoshi Tanaka

Nobuhiro Kasa

Kazuaki Hori

Takashi Sato

Kousuke Okuyama

Hiroyasu Ishizuka

A wireless communication system includes: a filter; and a semiconductor chip including a signal processing integrated circuit having an amplifier, wherein a main surface of the semiconductor chip is provided with a plurality of electrode terminals along an edge portion thereof; wherein the amplifier has a transistor including a control electrode, a first electrode through which a signal is outputted, and a second electrode to which a voltage is applied; wherein the control electrode, the first electrode and the second electrode of the transistor are connected to the electrode terminals, respectively; and wherein none of wirings are arranged between the electrode terminals and placements of the control electrode, the first electrode and the second electrode, making space between the electrodes and the electrode terminals narrow.

Wireless communication system

A semiconductor integrated circuit comprising a first circuit block including an oscillation circuit considered to be a noise generator and a second circuit block including circuits considered to be easily affected by a noise generated by the oscillation circuit, being most likely led to a malfunction are created on a single semiconductor substrate with the first and second circuit blocks separated from each other. To put it more concretely, the first and second circuit blocks are respectively created in a first island area and a second island area on the surface of the semiconductor substrate. The first and second island areas are each enclosed by an insulating isolation band. A low-resistance semiconductor area is created in a base area excluding locations occupied by active elements in the first and second island areas and is connected to a stable voltage terminal.

Signal processing semiconductor integrated circuit device

Disclosed herein is a semiconductor device wherein a thyristor protective element and a trigger element are provided in a semiconductor layer formed on a buried insulating layer, and a trigger electrode (gate) of the thyristor protective element and a back gate of the trigger element are provided in the same p well and electrically connected to each other to thereby drive the thyristor protective element based on a substrate current produced by the breakdown of the trigger element.

Semiconductor device and the process of manufacturing the semiconductor device

Growing community of inventors

Takasaki, Japan

Yoshiyasu Tashiro