Tdk Corporation

Mitsubishi Heavy Industries Limited

Yoshitomo Tanaka

Tomoyuki Sasaki

Hiroyasu Inoue

Hajime Utsunomiya

Katsuyuki Nakada

Tatsuo Shibata

Hitoshi Sakuma

Kazuhiko Maejima

Yasuhiro Aida

Takeshi Sakamoto

Katsuyuki Kurachi

Tatsuya Kato

Yohei Shiokawa

Koji Mishima

Hideki Hirata

Hitoshi Arai

Hiroshi Shingai

Masashi Miwa

Masaki Aoshima

Minoru Ota

Hiroshi Chihara

Yasuyuki Nakayama

Nobuya Uchida

Masaki Takahashi

Koji Miura

Yoshinori Fujikawa

Hisashi Suzuki

Taeko Tsubokura

Yuki Nagamine

Masami Mori

Tomoyuki Oike

Kumiko Yamazaki

Masato Kurihara

Takeshi Shibahara

Ryu Ohta

Masaru Oka

Provided is a permanent magnet including a rare-earth element R (such as Nd), a transition metal element T (such as Fe), B, Zr, and Cu. The permanent magnet contains a plurality of main phase grains including Nd, T, and B, and grain boundary multiple junctions, the one grain boundary multiple junction is a grain boundary surrounded by three or more of the main phase grains, one of the grain boundary multiple junctions contains a ZrBcrystal and an R&#x2014;Cu-rich phase including R and Cu, Fe is contained in the ZrBcrystal, a total concentration of Nd and Pr in the one grain boundary multiple junction containing both the ZrBcrystal and the R&#x2014;Cu-rich phase is higher than a total concentration of Nd and Pr in the main phase grain, a concentration of Cu in the one grain boundary multiple junction containing both the ZrBcrystal and the R&#x2014;Cu-rich phase is higher than a concentration of Cu in the main phase grain, and a unit of the concentration of each of Nd, Pr, and Cu is atomic %.

R-T-B based permanent magnet

A magnetoresistive effect element includes a magnetization fixed layer, a magnetization free layer, and a non-magnetic spacer layer that is stacked between the magnetization fixed layer and the magnetization free layer. The magnetization free layer includes a first free layer and a second free layer that are formed of a ferromagnetic material, and a magnetic coupling layer that is stacked between the first free layer and the second free layer. The first free layer and the second free layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first free layer and the second free layer are antiparallel to each other. The magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Fe, Co and Ni.

Magnetoresistive effect element and magnetic memory

A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.

Magnetoresistance effect element

A ferromagnetic multilayer film includes first and second magnetization fixed layers, first and second interposed layers, and a magnetic coupling layer. The magnetization fixed layers are antiferromagnetically coupled by exchange coupling via the interposed layers and the magnetic coupling layer. A main element of the magnetic coupling layer is Ru, Rh, or Ir. A main element of the first interposed layer is the same as that of the magnetic coupling layer. A main element of the second interposed layer is different from that of the magnetic coupling layer. A thickness of the first interposed layer is greater than or equal to 1.5 times and less than or equal to 3.2 times an atomic radius of the main element of the first interposed layer. A thickness of the second interposed layer is less than or equal to 1.5 times an atomic radius of the main element of the second interposed layer.

Ferromagnetic multilayer film, magnetoresistance effect element, and method for manufacturing ferromagnetic multilayer film

A magnetoresistive effect element includes a magnetization fixed layer, a magnetization free layer, and a non-magnetic spacer layer that is stacked between the magnetization fixed layer and the magnetization free layer. The magnetization fixed layer includes a first fixed layer and a second fixed layer that are formed of a ferromagnetic material, and a magnetic coupling layer that is stacked between the first fixed layer and the second fixed layer. The first fixed layer and the second fixed layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first fixed layer and the second fixed layer are antiparallel to each other. The magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Cr, Mn, Fe, Co and Ni.

A TMR element includes a base layer that is disposed on an upper surface of a via interconnect part, a magnetic tunnel junction that is disposed on a surface of the base layer, and an interlayer insulation layer that covers a side surface of each of the via interconnect part and the base layer. The base layer includes a stress relieving region. The magnetic tunnel junction includes a reference layer having a magnetization fixed direction, a magnetization free layer, and a tunnel barrier layer disposed between the reference layer and the magnetization free layer. The interlayer insulation layer includes an insulation material.

Tunnel magnetoresistive effect element, magnetic memory, and built-in memory

The object of the present invention is to provide a dielectric thin film and a capacitance element having excellent dielectric property. A dielectric thin film comprising a main component comprised of an oxynitride expressed by a compositional formula of ABON(a+b+o+n=5), wherein said 'A' is one or more selected from the group consisting of Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, said 'B' is one or more selected from the group consisting of Ta, Nb, Ti, and W, and crystalline particles constituting said dielectric thin film are polycrystalline which are not aligned to a particular crystal plane orientation, and a size of a crystallite of the crystalline particles included in the dielectric thin film is 100 nm or less.

Oxynitride thin film and capacitance element

A thin film piezoelectric element according to the present invention includes a potassium sodium niobate thin film having a structure in which a plurality of crystal grains are present in a film thickness direction; and a pair of electrode films sandwiching the potassium sodium niobate thin film. When the potassium sodium niobate thin film is divided into three regions of the same thickness in the film thickness direction and average crystal grain sizes A, A, and Aof the respective regions are determined, a ratio m/M of the smallest average crystal grain size m among A, A, and Ato the largest average crystal grain size M among A, A, and Ais 10% to 80%. The region having the smallest average crystal grain size m lies next to one of the pair of electrode films.

Thin film piezoelectric element, thin film piezoelectric actuator, thin film piezoelectric sensor, hard drive disk, and inkjet printer device

A piezoelectric element includes, as a piezoelectric layer, a thin film of potassium sodium niobate that is a perovskite compound represented by a general expression ABO, in which Sr (strontium) is substituted on both of an A site and a B site and Mn (manganese) is substituted only on the A site. Accordingly, the piezoelectric element is provided to decrease a leak current of the piezoelectric element using the thin film of potassium sodium niobate, to increase a withstand voltage thereof and to improve piezoelectric characteristics thereof.

Piezoelectric element, piezoelectric actuator, piezoelectric sensor, hard disk drive, and inkjet printer device

A piezoelectric element includes, as a piezoelectric layer, a thin film of potassium sodium niobate that is a perovskite compound represented by a general expression ABO, in which Ta (tantalum) is substituted on both of an A site and a B site. Accordingly, the piezoelectric element is provided to increase a reliability of the piezoelectric element using the thin film of potassium sodium niobate and to improve piezoelectric characteristics thereof.

The displacement as an actuator or the sensitivity as a sensor of a piezoelectric element can be increased and, in addition, the electric power consumption can be reduced by providing a thin film of potassium-sodium niobate, which is a perovskite type compound represented by a general formula ABO, as a piezoelectric layer, wherein a crystal orientation of a crystal structure of potassium-sodium niobate has in-plane fourfold symmetry as a whole piezoelectric layer, where a first axis of rotational symmetry is a thickness direction of the piezoelectric layer.

Piezoelectric element, piezoelectric actuator, piezoelectric sensor, hard disk drive, and ink-jet printer device

Growing community of inventors

Tokyo, Japan

Yoshitomo Tanaka