Showa Denko K.k.

Showa Denko Kabushiki Kaisha

Yoshitomo Shimazu

Yuji Itoh

Nobuo Uotani

Takanori Kido

Ayako Nishioka

Hiroshi Takahashi

Takashi Sato

Hajime Sato

The present invention aims to provide a polishing composition which allows high-speed polishing of a barrier film and an inter-layer dielectric film along with a wiring metal at the same time, while preventing dishing and erosion, and particularly maintaining the flatness of metal film. The chemical-mechanical polishing composition of the present invention comprises a dicarboxylic acid having 7 to 13 carbon atoms, an oxidizing agent, an abrasive and water.

Polishing composition and polishing method

The present invention provides a polishing composition for polishing copper or copper alloy, comprising: an oxidizing agent (A); at least one acids (B) selected from amino acids, carboxylic acids of 8 or less carbon atoms, or inorganic acids; a sulfonic acid (C) having an alkyl group of 8 or more carbon atoms; a fatty acid (D) having an alkyl group of 8 or more carbon atoms; and an N-substituted imidazole (E) represented by the following general formula (1). (In the formula (1), Ra, Rb, and Rc represent H or an alkyl group of 1 to 4 carbon atoms, and Rd represents a group selected from the group consisting of a benzyl group, a vinyl group, an alkyl group of 1 to 4 carbon atoms, and a group in which a portion of H of these groups has been substituted with OH or NH.)

Polishing composition

The present invention provide a chemical-mechanical polishing composition for inhibiting dishing and erosion as well as rapidly polishing an insulating film and barrier film at the same time while maintaining the flatness of the substrate surface polished. The present chemical-mechanical polishing composition comprises methanesulfonic acid, an alkali metal ion, an oxidizing agent, a silica abrasive and water, and has a pH of 8 to 12.

The present invention provides an LSI device polishing composition containing water, abrasive grains, an organic acid, and an oxidizing agent, and having a pH of 5.5-10.0 adjusted by an alkaline substance, the LSI device polishing composition being used for polishing a copper-containing metal wiring layer in which copper is deposited on an insulating film via barrier metal formed of Ta or TaN; and a method for producing LSI devices by use of the polishing composition. During polishing of a barrier metal such as Ta or TaN and a copper wiring layer, the rate of polishing Ta or TaN can be enhanced, to thereby prevent dishing and erosion.

LSI device polishing composition and method for producing LSI device

A polishing composition for polishing copper and tantalum or a tantalum compound provided on a semiconductor wafer, including an aqueous solvent and at least one amino acid having two or more nitrogen atoms.

Growing community of inventors

Nagano, Japan

Yoshitomo Shimazu