Mitsubishi Denki Kabushiki Kaisha

Yoshito Seiwa

Toshitaka Aoyagi

Masaki Kuzumoto

Shigenori Yagi

Yutaka Mihashi

Yasuhito Myoi

Kazuki Kuba

Saburo Takamiya

Susumu Hinata

A semiconductor laser device including a substrate containing a groove through which the laser light is emitted, a first layer disposed between the substrate and an active layer including a superlattice region opposite the groove and having the same conductivity type as the region in the sides walls of the groove and a disordered region in the first layer adjacent the superlattice of a different conductivity type from that of the superlattice region for confining current flow from the substrate to the active layer. A method of producing the semiconductor laser device includes implanting impurity ions which change the conductivity type but suppress the disordering of the superlattice region after annealing. The ions are implanted through the groove and produce the desired conductivity type region in the side walls of the groove.

Method of producing a semiconductor laser by implanting impurities which

A semiconductor laser device including a substrate containing a groove through which the laser light is emitted, a first layer disposed between the substrate and an active layer including a superlattice region opposite the groove and having the same conductivity type as the region in the side walls of the groove and a disordered region in the first layer adjacent the superlattice of a different conductivity type from that of the superlattice region for confining current flow from the substrate to the active layer. A method of producing the semiconductor laser device includes implanting impurity ions which change the conductivity type but suppress the disordering of the superlattice region after annealing. The ions are implanted through the groove and produce the desired conductivity type region in the side walls of the groove.

Semiconductor laser device

A semiconductor laser device include a Si substrate, a current confinement layer having an aperture disposed on the substrate, compound semiconductor layers disposed on the current confinement layer and on the Si substrate at the aperture of the current confinement layer, and a buffer layer for relieving the stress caused by the difference in lattice constants disposed between the Si substrate and the compound semiconductor layers. The Si substrate is of a first conductivity type and the current confinement layer is of a second conductivity type, or the current confinement layer comprises a compound semiconductor while the substrate comprises Si. The aperture of the current confinement layer is produced by anodic oxidation and selective etching of the current confinement layer. Therefore, a good re-growth interface at the substrate is obtained. There are no problems from residual oxides at the surface of the substrate, of Si or p type impurities diffusing out of the surface of the substrate, or of non-uniform thermal etching during the subsequent crystal growth processes.

A semiconductor laser array including multiple semiconductor layers serially disposed on each other to form a plurality of laser stripes that are laterally disposed within the layers each of the lasers stripes including a waveguide of a particular width wherein each of the waveguides has either a relatively wide width or a relatively narrow width and the stripes are laterally arranged with alternatingly wide and narrow waveguides.

Semiconductor laser array

A laser device comprises a laser medium, a semiconductor light-emitting element for exciting the laser medium, a reflecting surface surrounding the outer periphery of the laser medium along its optical axis, and an opening provided in a part of the reflecting surface for causing light from the semiconductor light-emitting element to be incident upon the laser medium. The laser device is improved further by providing a polarizing plate and a light guide between the light-emitting element and the laser medium and by deviating the optical axis of excitation light from the central axis of the laser medium.

Laser device with high oscillation efficiency

A semiconductor laser includes an active region which includes a portion having a refractive index distribution with a relatively samll refractive index difference which allows only the fundamental mode of the transverse modes in the neighborhood of the light output facet. The other region of the active region has a refractive index distribution with a large refractive index difference which allows the fundamental mode as well as higher order modes.

Semiconductor laser

A laser diode in accordance with the present invention comprises: a substrate (11) of p-GaAs; a current constricting layer (12) of n-GaAs formed with a slit (13) over the substrate, wherein the slit is opened through the constricting layer and separates the constricting layer into two areas; a liner(s) (21) of p-GaAs formed on at least both the inner side walls of the slit; a lower clad layer (14) of p-Ga.sub.0.6 Al.sub.0.4 As formed over the constricting layer, burying the slit; an active layer (15) of p-Ga.sub.0.9 Al.sub.0.1 As which is formed over the lower clad layer and has a refractive index higher than that of the lower clad layer; and an upper clad layer of n-Ga.sub.0.6 Al.sub.0.4 As which is formed over the active layer and has a refractive index lower than that of the active layer.

Growing community of inventors

Itami, Japan

Yoshito Seiwa