Rohm Co., Ltd.

Tdk Corporation

Sae Magnetics (h.k.) Limited

Unitika Ltd.

Yoshiteru Nagai

Kohei Makita

Koji Shimazawa

Takashi Honda

Ryuji Fujii

Tsuguki Noma

Kosuke Tanaka

Seiichi Takayama

Hosei Mitsuzawa

Masaki Obora

A semiconductor device includes a first conductivity type semiconductor layer, a second conductivity type region selectively formed in the semiconductor layer, a second conductivity type peripheral impurity region formed around the second conductivity type region in the semiconductor layer, and a Schottky electrode that is formed on the semiconductor layer and that forms a Schottky junction portion between a first conductivity type part of the semiconductor layer and the Schottky electrode, and, in the semiconductor device, a pn junction portion between the peripheral impurity region and the first conductivity type part of the semiconductor layer has a higher withstand voltage than a Zener voltage Vof a Zener diode made of a pn junction portion between the second conductivity type region and the first conductivity type part of the semiconductor layer.

Semiconductor device

A Schottky barrier diode includes a first semiconductor layer having depressions on a top surface thereof, and having a guard ring extending from the top surface to an inner position of the first semiconductor layer, the guard ring including portions arranged with the depressions interposed therebetween when viewed in a direction perpendicular to the top surface; the diode further includes an insulation layer having portions arranged with the depressions interposed therebetween when viewed in the perpendicular direction, a first metal layer extending as bridging inside and outside of the depressions and the insulation layer, the first metal layer having a first end on the insulation layer, and a second metal layer formed on the first metal layer and having a second end on the insulation layer, the second end being flush with the first end.

Schottky barrier diode

A Schottky barrier diode includes a semiconductor layer having a plurality of trenches formed by digging in from a top surface and having mesa portions formed between adjacent trenches, and a Schottky metal formed to contact the top surface of the semiconductor layer including inner surfaces of the trenches.

A light source unit has a substrate, a light source that is mounted to the substrate. The light source includes; a first emission part that emits a forward light, the forward light being a laser light in an oscillation state; a second emission part that is located on a side opposite to the first emission part and that emits a rearward light, the rearward light being a laser light in an oscillation state; and a light leakage part located at a position different from the first emission part and the second emission part. The light source further includes a photodetector that is provided on the substrate, wherein the photodetector has a light receiving surface for detecting a leakage light that leaks from the light leakage part.

Light source unit, heat-assisted magnetic recording head using the same, and light source for light source unit

A sub-mount having a photodiode region, includes a photodiode which has a first conductivity-type layer arranged in a surface portion of the sub-mount of the photodiode region to form a light-receiving surface and a second conductivity-type region arranged below the first conductivity-type layer and is configured to receive at the light-receiving surface a light emitted from a light-emitting element and convert the light into a photocurrent. A peak light-receiving wavelength at which the photocurrent of the photodiode becomes its maximum value is more than or equal to a minimum emission wavelength of the light-emitting element and less than or equal to a maximum emission wavelength of the light-emitting element.

Sub-mount having photodiode and light-emitting element module

A plurality of laser diode units is tested in a bar state, each of the laser diode units in which a laser diode that includes a first electrode and a second electrode formed on surfaces facing each other and that is mounted on a mounting surface of a submount such that the first electrode faces the mounting surface of the submount. The method includes preparing a bar in which mounting areas each of which includes the laser diode unit formed thereon and dicing margins for separating the bar into the separate laser diode units are alternatively aligned along a longitudinal direction wherein a first pad electrically connected with the first electrode of the laser diode is disposed on the mounting surface of each of the mounting areas of the submounts and a second pad electrically connected to the first pad of either one of the mounting areas that are adjacent to the dicing margin is disposed on the mounting surface of each of the dicing margins of the submounts: contacting sheet-shaped probes to the second electrode and the second pad at a slantwise angle with respect to the second electrode and the second pad, and pressing the probes to the second electrode and the second pad while deforming the probes; and providing a potential difference between the second electrode and the second pad through the probes so that the laser diode emits laser light.

Method of burn-in testing for thermally assisted head

A lubricated aromatic polyester copolymer composition comprises an aromatic polyester copolymer of a mixture of terephthalic acid and isophthalic acid or derivative thereof at a molar ratio of terephthalic acid group to isophthalic acid group of 9:1 to 1:9 and a bisphenol having the formula ##STR1## wherein --X-- represents --O--, --S--, --SO.sub.2 --, --CO--, or either of an alkylene group or an alkylidene group which can be substituted by a hydrocarbon group having one or more carbon atom or a halogen atom or a halohydrocarbon group; and R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.1 ', R.sub.2 ', R.sub.3 ', and R.sub.4 ' respectively represent hydrogen atom, a halogen atom, hydroxyl group or a hydrocarbon group; and a specific lubricant comprising more than 70 wt. % of n-paraffin having carbon atoms of 16 to 40 at a ratio of 0.05 to 5 wt. % based on said polyester copolymer.

Growing community of inventors

Kyoto, Japan

Yoshiteru Nagai