Nec Corporation

Nippon Electric Co., Ltd.

Hodogaya Chemical Co., Ltd.

Yoshitake Ohnishi

Toru Tatsumi

Kazuhiko Endo

Hiroshi Gokan

Michihiro Gonda

Yoshihide Miyazawa

Minoru Ozutsumi

Yoshishige Matsumoto

Masayoshi Suzuki

Takeshi Endo

Masaki Itoh

Alessandro Casnati

Kenji Mizuno

Rocco Ungaro

Jun-ichi Fujita

Kazuhide Saigo

Andrea Pochini

Yasushi Saotome

Arturo Arduini

A semiconductor device, in which wiring layers are electrically isolated from each other by an insulating film which includes an amorphous carbon fluoride film insulating film containing carbon and fluorine as main components and the wiring layers are electrically connected to each other by a conductive material buried in a hole penetrating through the insulating film, is manufactured by selectively etching the amorphous carbon fluoride film. Moreover, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed on both of the amorphous carbon fluoride film and a side surface of said hole, or one of the amorphous carbon fluoride film and the side surface thereof.

Semiconductor manufacturing method

Semiconductor device and manufacturing method of the same

A resist film consisting of 5,11,17,23,29,35-hexachloromethyl-37, 38,39,40,41,42-hexamethoxycalix�6!arene sensitive to a high-energy beam and soluble to a solvent is formed on a substrate etchable by a dry etching, has a selective region thereof exposed to the high-energy beam, with a remaining region unexposed thereto, and developed to define a pattern on the substrate, as the remaining region is removed by the solvent, before the substrate with the pattern is subjected to the dry etching. A nanometric patterning and etching is permitted, with a reduced process time.

Ultrafine pattern forming method and ultrafine etching method using

Disclosed is a novel novolak resin comprising structural units having a trimethylsilyl group. A resist material highly resistive to dry etching is obtained by adding a photosensitive diazo compound to this novolak resin. The resist material is useful in various lithography methods to form a positive resist pattern. This resist material is used in a pattern forming method of a two-layer type, in which a fine pattern is formed in a thin film of the resist material by lithography and then transferred into an underlying thick organic polymer layer by dry etching of the underlying layer with the resist pattern as mask. Curing of the resist pattern by irradiation with deep UV rays is effective for further improvement in the precision of the transferred pattern.

Silicon-containing novolak resin and resist material and pattern forming

A process for fabrication of resist comprising a substrate and an overlying radiation sensitive layer, said overlying layer consisting essentially of a specific polymer or copolymer of vinylnaphthalene.

Pattern forming and etching process using radiation sensitive negative

A lithographic resist for use in microfabrication comprising a negative-type resist containing a radical scavenger capable of preventing post-irradiation reaction.

Negative resist and radical scavenger composition with capability of

A liquid crystal composition having a homogeneous alignment of the liquid crystalline molecules, comprises a liquid crystal material, for example, nematic, smectic and cholesteric liquid crystal substances, an additive effective for forming the homogeneous alignment, said additive consisting of at least one heterocyclic compound having a five or six-membered heterocyclic ring containing therein at least one atomic group selected from the class consisting of the atomic group of the formulae; ##EQU1## wherein X is a hydrogen atom or substituted or unsubstituted phenyl radical, and at least one atomic group of the formula: ##EQU2## Y, wherein Y represents an oxygen or sulfur atom, said heterocyclic compounds being different from indigo, and, if necessary, a supplementary additive effective for enhancing the dynamic scattering property of the liquid crystal material, said supplementary additive consisting of at least one substance selected from the class consisting of

Liquid crystal composition

A liquid crystal composition having long-life dynamic light scattering properties under application of DC or AC voltage, comprising (1) at least one liquid crystalline substance selected from the group consisting of nematic and cholesteric, and (2) at least one additive selected from the group consisting of (A) mixtures of at least one first organic cyclic compound selected from the group consisting of quinone compounds, quinoneimine compounds, imino compounds, desoxybenzoin compounds, dibenzyl methane compounds and triphenyl methane compounds, with at least one second organic cyclic compound selected from the group consisting of hydroquinone compounds, aromatic amino compounds, heterocyclic amino compounds and alicyclic amino compounds, and (B) aromatic, heterocyclic and alicyclic compounds having at least one radical selected from the group consisting of carbonyl and imino radicals and at least one radical selected from the group consisting of hydroxyl and amino radicals.

Growing community of inventors

Tokyo, Japan

Yoshitake Ohnishi