Osaka Titanium Technologies Co., Ltd.

Rohm Co., Ltd.

Sumitomo Titanium Corporation

Yoshitake Natsume

Tadashi Ogasawara

Kazuomi Azuma

Munetoshi Watanabe

Jyunji Kido

Koichi Mori

Toshiharu Iwase

In a powder-sintered type silicon monoxide based evaporating material which is used to form an evaporated film of silicon monoxide, the generation of splash is restrained. Material strength that can resist against the use of the material is ensured. In order to realize these, a starting powder made of precipitating SiO is sintered at 700 to 1000&#xb0; C. to form an evaporating material. The precipitation of Si is restrained in the step of the sintering. In the measurement thereof by XRD, the peak strength Pat a Si peak point generated near 2&#x3b8;=28&#xb0; and the base strength Pat the peak point expected from the average strength gradient before and after the peak point satisfies the following: P/P&#x2266;3. The compression fracture strength of the evaporating material after the material is sintered is raised to 5 MPa or more by selective use of precipitating SiO produced by a vacuum condensing machine.

Silicon monoxide vapor deposition material and process for producing the same

Provided is a sputtering target which can give a high water barrier property and a high flexibility to a sputtering film, can keep a high film forming rate certainly in sputtering, and can make damages to an objective substance wherein a film is to be formed as small as possible. In order to realize this, a mixed powder which contains 20 to 80% by weight of a SiO powder, the balance of the powder being made of a TiOpowder and/or a Ti powder, is pressed and sintered. The sintered body has a composition of Si&#x3b1;Ti&#x3b2;O&#x3b3; wherein &#x3b1;, &#x3b2; and &#x3b3; are mole ratios of Si, Ti and O, respectively, and the ratio of &#x3b1;/&#x3b2; ranges from 0.45 to 7.25 and the ratio of &#x3b3;/(&#x3b1;+&#x3b2;) ranges from 0.80 to 1.70.

Sputtering target, method for producing same, sputtering thin film formed by using such sputtering target, and organic EL device using such thin film

A sintered object of silicon monoxide for use as a material for forming silicon oxide thin films is provided of which the evaporation residue as determined by subjecting a sample thereof to thermogravimetry at a heating temperature of 1,300&#xb0; C. and in a vacuum atmosphere, namely at a pressure of not higher than 10 Pa, is not more than 4% by mass relative to the sample before measurement. This sintered object can be produced by sintering SiO particles having a particle diameter of not smaller than 250 &#x3bc;m, either after press forming thereof or during press forming thereof, in a non-oxygen atmosphere. This sintered object is high in evaporation rate and, when it is used as a material for film formation, an improvement in productivity in producing silicon oxide thin films can be expected. Thus, it can be widely applied in forming silicon oxide thin films useful as electric insulating films, mechanical protection films, optical films, barrier films of food packaging materials, etc.

Sintered object of silicon monoxide and method for producing the same

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Amagasaki, Japan

Yoshitake Natsume