Sharp Kabushiki Kaisha Corporation

Semiconductor Energy Laboratory Co., Ltd.

Advanced Lcd Technologies Development Center Co., Ltd.

Tohoku University

Other

Kabushiki Kaisha Ekisho Sentan Gijutsu Kaihatsu Center

Toyo Seikan Kaisha, Ltd.

Yoshitaka Yamamoto

Yutaka Ishii

Shunpei Yamazaki

Tetsuhiro Tanaka

Hideomi Suzawa

Jun Koyama

Masayuki Sakakura

Yoshinobu Kimura

Masakiyo Matsumura

Mikihiko Nishitani

Naoki Makita

Masato Hiramatsu

Yasumasa Yamane

Takayuki Inoue

Takuya Matsuo

Hidekazu Miyairi

Kenichi Okazaki

Yuhei Sato

Masayuki Jyumonji

Hiroshi Matsukizono

Katunobu Awane

Yosuke Kanzaki

Takashi Funai

Toshimitsu Konuma

Akihisa Shimomura

Fumiaki Funada

Yutaka Okazaki

Naoaki Yamaguchi

Tadayoshi Miyamoto

Naofumi Kimura

Naoki Okuno

Tatsuo Uchida

Masatoshi Yokoyama

Yasuhisa Itoh

Takahiro Ishinabe

Takahisa Ishiyama

Tohru Kawakami

Yoshito Suzuki

Tomohiro Kimura

Kiyoshi Kato

Hisao Ikeda

Takeshi Nishi

Yasuhiro Jinbo

Yoshihiro Izumi

Kozo Nakamura

Masahiro Adachi

Yozo Narutaki

Seiichi Mitsui

Manabu Niboshi

Sayuri Fujiwara

Tsutomu Murakawa

Hiroshi Yoneda

Kiyoshi Ogishima

Masaki Kado

Akitsugu Hatano

Takahiro Tsuji

Toshiki Matsuoka

Yasuhiro Mitani

Satoshi Seo

Yasuhiko Takemura

Satoshi Teramoto

Yukinori Shima

Yuugo Goto

Daisuke Matsubayashi

Tomoaki Atsumi

Koji Dairiki

Yasushi Kubota

Masaru Yoshida

Takashi Miura

David James Montgomery

Tatsuo Morita

Mitsuhiro Koden

Atsushi Hirose

Toshihiko Takeuchi

Hiroyuki Abe

Naoto Yamade

Tokihiko Shinomiya

Akira Tagawa

Naoya Sakamoto

Tamae Moriwaka

Takuya Kawata

Shigeyasu Mori

Ichiro Shiraki

Hideo Kurashima

Ryu Komatsu

Masataka Matsuura

Toshihiko Sakai

Shigeto Yoshida

Yutaka Sawayama

Takahiro Sato

Yasuhisa Oana

Kenji Kimoto

Shunsuke Koshioka

Takayuki Cho

Masashi Maekawa

Kanta Abe

Toshimasa Hamada

Kazuki Tanemura

Akira Yamaguchi

Akihiro Oda

A manufacturing method of a semiconductor device in which the threshold is adjusted to an appropriate value is provided. The semiconductor device includes a semiconductor, a source or drain electrode electrically connected to the semiconductor, a first gate electrode and a second gate electrode between which the semiconductor is sandwiched, an electron trap layer between the first gate electrode and the semiconductor, and a gate insulating layer between the second gate electrode and the semiconductor. By keeping a potential of the first gate electrode higher than a potential of the source or drain electrode for 1 second or more while heating, electrons are trapped in the electron trap layer. Consequently, threshold is increased and Icut is reduced.

Semiconductor device and method for manufacturing semiconductor device

To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.

Semiconductor device

A transistor with favorable electrical characteristics, a transistor with stable electrical characteristics, or a highly integrated semiconductor device is provided. In a top-gate transistor in which an oxide semiconductor is used for a semiconductor layer where a channel is formed, elements are introduced to the semiconductor layer in a self-aligned manner after a gate electrode is formed. After that, a side surface of the gate electrode is covered with a structure body. The structure body preferably contains silicon oxide. A first insulating layer is formed to cover the semiconductor layer, the gate electrode, and the structure body. A second insulating layer is formed by a sputtering method over the first insulating layer. Oxygen is introduced to the first insulating layer when the second insulating layer is formed.

Transistor, method for manufacturing transistor, semiconductor device, and electronic device

A lighting device () includes: a surface light source (); a first lens (L) having a first focal point (F), the first lens being provided on the light exit surface side of the surface light source; and a second lens (L) having a second focal point (F), the second lens being provided on a light exit surface side of the first lens, the surface light source, the first lens, and the second lens being configured such that a first virtual image (I) is formed by the first lens and a second virtual image (I) is formed by the second lens, wherein the first virtual image (I) is formed between the second focal point (F) and the first lens, and the second focal point (F) is on a side opposite to the light source side relative to a predetermined focal position f'.

Illumination device

A method for adjusting threshold of a semiconductor device is provided. In a plurality of semiconductor devices each including a semiconductor, a source or drain electrode electrically in contact with the semiconductor, a gate electrode, and a charge trap layer between a gate electrode and the semiconductor, a state where the potential of the gate electrode is set higher than the potential of the source or drain electrode while the semiconductor devices are heated at 150&#xb0; C. or higher and 300&#xb0; C. or lower is kept for one second or longer to trap electrons in the charge trap layer, so that the threshold is increased and Icut is reduced. Here, the potential difference between the gate electrode and the source or drain electrode is set so that it is different between the semiconductor devices, and the thresholds of the semiconductor devices are adjusted to be appropriate to each purpose.

Method for manufacturing semiconductor device

A highly reliable semiconductor device that is suitable for high-speed operation is provided. A semiconductor device includes a first circuit, a second circuit, and a third circuit. The first circuit has an arithmetic processing function. The second circuit includes a memory circuit. The memory circuit includes a transistor which includes a first conductor, a second conductor, a first insulator, a second insulator, and a semiconductor. The first conductor includes a region overlapping the semiconductor with the first insulator positioned between the first conductor and the semiconductor. The second conductor includes a region overlapping the semiconductor with the second insulator positioned between the second conductor and the semiconductor. The first conductor is capable of selecting on or off of the transistor. The third circuit is electrically connected to the second conductor, and is capable of changing the potential of the second conductor in synchronization with an operation of the transistor.

A novel semiconductor device where multilevel data can be written and read. The semiconductor device includes first to fifth transistors, a capacitor, a bit line, and a power supply line. Write operation is performed in such a manner that first data is supplied to a gate of the fifth transistor through the first transistor; the first transistor is turned off; second data is supplied to a second electrode of the capacitor through the second transistor to convert the first data into third data; and the second electrode of the capacitor are made electrically floating. The second electrode of the capacitor is initialized to GND through the third transistor. Read operation is performed by charging or discharging the bit line through the fourth transistor and the fifth transistor. The first to third transistors are preferably oxide semiconductor transistors.

A semiconductor device that includes transistors with different threshold voltages is provided. Alternatively, a semiconductor device including a plurality of kinds of circuits and transistors whose electrical characteristics are different between the circuits is provided. The semiconductor device includes a first transistor and a second transistor. The first transistor includes an oxide semiconductor, a conductor, a first insulator, a second insulator, and a third insulator. The conductor has a region where the conductor and the oxide semiconductor overlap with each other. The first insulator is positioned between the conductor and the oxide semiconductor. The second insulator is positioned between the conductor and the first insulator. The third insulator is positioned between the conductor and the second insulator. The second insulator has a negatively charged region.

One embodiment of the present invention is a semiconductor device which includes a gate electrode; a gate insulating film formed to cover the gate electrode; a semiconductor layer formed over the gate insulating film and placed above the gate electrode; a second insulating film formed over the semiconductor layer; a first insulating film formed over a top surface and a side surface of the second insulating film, a side surface of the semiconductor layer, and the gate insulating film; silicon layers and which are formed over the first insulating film and electrically connected to the semiconductor layer; and a source electrode and a drain electrode which are formed over the silicon layers. The source electrode and the drain electrode are electrically separated from each other over the first insulating film. The semiconductor layer is not in contact with each of the source electrode and the drain electrode.

The semiconductor device is manufactured by the following method. A first oxide semiconductor film is formed over a first gate electrode and a first insulating film, oxygen is added to the first oxide semiconductor film, and then a second oxide semiconductor film is formed over the first oxide semiconductor film. Then, heat treatment is performed. Next, part of the first insulating film, part of the first oxide semiconductor film, and part of the second oxide semiconductor film are etched to form a first gate insulating film having a projection. Next, a pair of electrodes is formed over the second oxide semiconductor film, and a third oxide semiconductor film is formed over the second oxide semiconductor film and the pair of electrodes. Then, a second gate insulating film is formed over the third oxide semiconductor film, and a second gate electrode is formed over the second gate insulating film.

A semiconductor device in which the threshold is adjusted is provided. In a transistor including a semiconductor, a source or drain electrode electrically connected to the semiconductor, a gate electrode, and an electron trap layer between the gate electrode and the semiconductor, the electron trap layer includes crystallized hafnium oxide. The crystallized hafnium oxide is deposited by a sputtering method using hafnium oxide as a target. When the substrate temperature is Tsub (&#xb0; C.) and the proportion of oxygen in an atmosphere is P (%) in the sputtering method, P&#x2267;45&#x2212;0.15&#xd7;Tsub is satisfied. The crystallized hafnium oxide has excellent electron trapping properties. By the trap of an appropriate number of electrons, the threshold of the semiconductor device can be adjusted.

Method for manufacturing semiconductor device comprising electron trap layer

Provided is a method for manufacturing a semiconductor device, in which a degradation of characteristics of a thin film transistor can be suppressed by performing plasma oxidation treatment on a gate insulating film containing nitrogen. An embodiment of the present invention is a method for manufacturing a semiconductor device comprising a thin film transistor including a gate electrode, a gate insulating film containing nitrogen, and a channel region in microcrystalline semiconductor films. The method includes the steps of performing plasma treatment on the gate insulating film in an oxidizing gas atmosphere containing hydrogen and an oxidizing gas containing an oxygen atom, and forming the microcrystalline semiconductor film over the gate insulating film. Formula (1), a/b&#x2267;2, and Formula (2), b&#x3e;0, are satisfied, where the amount of hydrogen and the amount of the oxidizing gas in the oxidizing gas atmosphere are a and b, respectively.

Method for manufacturing semiconductor device and plasma oxidation treatment method

Growing community of inventors

Nara, Japan

Yoshitaka Yamamoto