Sanyo Electric Co., Ltd.

Semiconductor Components Industries, LLC

Yoshitaka Ueda

Isao Ogura

Atsushi Wada

Shigeto Kobayashi

Kouichi Yamada

Shinji Furuichi

Takashi Asano

Satoru Sekine

A power supply circuit generates the internal power supply voltage intVCC from a first power supply capable of supplying a first power supply voltage Vand a second power supply capable of supplying a second power supply voltage V, which is lower than the first power supply voltage V. A first transistor TRis provided between the first power supply and an output node, whereas a second transistor TRis provided between the second power supply and the output node. A first supply unit supplies the inverted value of an output voltage of the first power supply or the inverted value of a voltage corresponding to the output voltage of the first power supply, to the gate input of the first transistor TR. A second supply unit supplies the output voltage of the first power supply or the voltage corresponding to the output voltage of the first power supply, to the gate input of the second transistor TR

Power supply circuit

A MOS transistor includes a gate electrode formed in a grid pattern, source regions and drain regions each surrounded by the gate electrode, and a source metal wiring connected to the source regions via source contacts and a drain metal wiring connected to the drain regions via drain contacts. The source metal wiring and the drain metal wiring are disposed along one direction of the grid of the gate electrode. Each of the source regions and the drain regions is a rectangular form having its long side along the length direction of each metal wiring. The source metal wiring and the drain metal wiring are each formed in a zigzag manner in the length direction and are respectively connected to the source contacts and the drain contacts.

Semiconductor device

A plurality of flip-flop circuits, having different circuit configurations, which perform an identical digital signal processing are mixed on a single semiconductor substrate. A first flip-flop circuit among the plurality of flip-flop circuits receives a clock signal supplied from outside the flip-flop circuits, through at least two stage inverters, and operates with clock signals outputted from the inverters. A second flip-flop circuit receives the clock signal supplied from outside the flip-flop circuits through at least one inverter having a less number of stages than the number of stages of the inverter contained in the first flip-flop circuit, and operates with at least one of the clock signal and a clock signal outputted from the inverter.

Semiconductor integrated circuit with flip-flop circuits mounted thereon

A semiconductor integrated circuit comprises therein a plurality of logic circuits synchronously designed to operate in synchronization with a clock signal, a first power supply wire for supplying a high-potential side power supply voltage from a first input terminal to each logic circuit, a second power supply wire for supplying the high-potential side power supply voltage from a second input terminal to each logic circuit and a third power supply wire for supplying the high-potential side power supply voltage from a third input terminal to each logic circuit. The logic circuit (DFF circuit) includes two stages of latch circuits and a clock signal inversion circuit. Only the clock signal inversion circuit is connected with the first power supply wire, while the second power supply wire is connected with the remaining latch circuits.

Semiconductor integrated circuit related to a circuit operating on the basis of a clock signal

A plurality of first basic cells and a plurality of second basic cells are formed on a semiconductor substrate. A gate electrode of each of transistors in the first basic cell has a gate length of the minimum size. A gate electrode of each of transistors in the second basic cell has a second gate length larger than the first gate length. The transistors in the first basic cell are connected to each other, to construct a circuit which is operable at high speed and can be increased in integration density. The transistors in the second basic cell are connected to each other, to construct a circuit which can be reduced in power consumption and is hardly affected by process variations.

Semiconductor integrated device comprising a plurality of basic cells

A basic cell has a plurality of transistors that are separated from one another for forming an electronic circuit that has a particular function when the transistors are coupled. The basic cell has at least two transistors. One is different in size and orientation from the other.

Growing community of inventors

Ogaki, Japan

Yoshitaka Ueda