Sharp Kabushiki Kaisha Corporation

Sharp Corporation

Yoshitaka Tomomura

Masahiko Kitagawa

Kenji Nakanishi

Nobuaki Teraguchi

Masanori Murakami

Yasuo Koide

Shigeo Nakajima

Satoshi Yamaue

Shinya Hirata

Koji Takahashi

Yoshiyuki Takahira

Makoto Izumi

Yosuke Maemura

Geoffrey Duggan

Kazunori Annen

Tatsuya Ryowa

Yasuo Fukai

Judy Megan Rorison

Masato Ohno

A headlampincludes (i) a laser elementfor emitting a laser beam, (ii) a light emitting section, including a sealing material made from an inorganic material, for emitting fluorescence upon receiving the laser beam emitted from the laser element, and (iii) a heat sinkfor releasing, via a contact surface of the heat sinkwhich contact surface is in contact with the light emitting section, heat generated in the light emitting sectionin response to the laser beam emitted onto the light emitting section, the light emitting sectionexisting within a range which is determined on the basis of the contact surface and with which desired heat releasing efficiency is obtained.

Light emitting device, vehicle headlamp, illumination device, and vehicle

A fluorescent material-sealed sheet includes a plurality of fluorescent sections, an upper sealing section, and a lower sealing section, the plurality of fluorescent sections being sealed by the upper sealing section and the lower sealing section.

Light source, light-emitting device, light source for backlight, display device, and method for producing light source

Method of epitaxially growing III-V compound semiconductor containing nitrogen and at least another group V element utilizing MBE

A II-VI group compound semiconductor device having a p-type Zn.sub.x Mg.sub.1-x S.sub.y Se.sub.1-y (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) semiconductor layer, on which an electrode layer is formed with at least metallic nitride layer lying between the semiconductor layer and the electrode layer.

II-VI group compound semiconductor device and method for manufacturing

A II-VI group compound semiconductor device comprising a Zn.sub.X Mg.sub.1-X S.sub.Y Se.sub.1-Y (0.ltoreq.X.ltoreq.1, 0.ltoreq.Y.ltoreq.1) semiconductor layer, an intermediate layer comprising a compound of an element constituting the semiconductor layer and an additive element of Cd, Te or Hg formed on the semiconductor layer, and an electrode layer containing Ni, Pt or Pd formed on the intermediate layer.

II-VI group compound semiconductor device

An optoelectronic semiconductor device is provided in which carrier transport towards the active region thereof is enhanced by the formation of a miniband within a superlattice region of the device having a repeating pattern of first and second semiconductor regions. The minimum energy level of the miniband is equal to or greater than the energy level of a guiding region between the active region and the superlattice region.

Optoelectronic semiconductor device having a miniband

A compound semiconductor luminescent device is disclosed which comprises a semiconductor substrate and a multi-layered structure disposed on the substrate, the multi-layered structure comprising at least one conductive layer, a luminescent layer, and a current injection layer, wherein the substrate and the layers are made of at least one kind of II-VI group compound semiconductor.

Compound semiconductor luminescent device

II-VI group compound semiconductor device metallic nitride ohmic contact

An electroluminescent device of compound semiconductor includes a compound semiconductor substrate having at least one through-hole, an electroluminescent part consisting of a plurality of epitaxial compound semiconductor layers formed on the substrate, and at least a pair of electrodes having external leads in which one electrode is connected to the uppermost layer of the electroluminescent part and another electrode is directly connected to the lowest layer of the electroluminescent part through the through-hole of the substrate. Thereby, a voltage from an external source is enabled to be directly applied to the electroluminescent part.

Compound semiconductor electroluminescent device

A method for fabricating a semiconductor thin film is disclosed. The method includes the step of epitaxially growing a semiconductor layer made of a group II-VI compound semiconductor to have a thickness of at least one atomic layer or more, on a main plane of a single-crystal semiconductor substrate, the semiconductor substrate having one of a diamond structure and a zinc blende structure, the main plane being inclined by an angle in the range of 2 to 16 degrees with respect to a (100) plane.

Method for producing a group II-VI compound semiconductor thin film and

A semiconductor waveguide structure of the II-VI group compound semiconductor made of the II group element and the VI group element. The waveguide structure includes a waveguide layer and clad layers which puts the waveguide layer therebetween. The waveguide layer has a refractive index larger than a refractive index of each clad layer. At least one of the clad layers contains the element Cd. With such an arrangement, the refractive index of one clad layer is established to be different from that of the other clad layer. In such a case, it is preferable that the semiconductor waveguide structure comprises at least two waveguide layers which are adjacent to each other and that the structure has either one of the features as follows: each refractive index of the waveguide layers varies stepwise at each boundary surface of the layers; the refractive index of at least one of the waveguide layers varies so as to be inclined; and super lattice layers are formed between the clad layer and the waveguide layers. Further, in the arrangement, more than two waveguide layers and clad layers may be formed in such a manner that each of the waveguide layer is put between the clad layers.

Semiconductor waveguide structure of a II-VI group compound

A luminescent material capable of emitting a blue-green light with high luminance, which comprises a single crystalline sulfide solid solution of cubic or hexagonal system represented by the formula: Zn.sub.1-(x+y) Cd.sub.y Al.sub.x S, wherein x and y satisfy 0.001.ltoreq.x&lt;0.1, 0&lt;y.ltoreq.0.5, respectively.

Luminescent material

An electroluminescent device of compound semiconductor including a semiconductor substrate, a buffer layer epitaxially grown on the semiconductor substrate and a luminescent layer epitaxially grown on the buffer layer, the substrate being formed from a single crystal of zinc sulfide, zinc selenide or a mixed crystal thereof, the luminescent layer being formed from aluminum nitride, indium nitride, gallium nitride or a mixed crystal of at least two of the nitrides.

Electroluminescent device of compound semiconductor with buffer layer

A high-purity II-VI semiconducting compound can be produced by initially preparing a substrate of a II-VI semiconducting compound by a chemical transport method with a halogen as transport medium and then epitaxially growing a layer of a II-VI compound on this substrate.

Method of growth II-VI semiconducting compounds

An electroluminescent device of compound semiconductor which is made of II-IV compound semiconductor to be in pn junction type, wherein n layer of the pn junction part comprises a II-VI compound semiconductor layer containing comprises a II-VI compound semiconductor layer containing zinc as an essential composite element and p layer of the pn junction part comprises a II-VI compound semiconductor layer having an epitaxial layer containing M, Be and Te (wherein M is Cd or Zn) as an essential composite element.

Growing community of inventors

Nara, Japan

Yoshitaka Tomomura